Cree EZ1350-p LEDs Data Sheet (Anode-up) CxxxEZ1350-Sxxx00-x
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1 Cree EZ35-p LEDs Data Sheet (Anode-up) CxxxEZ35-Sxxx-x Cree s EZBright LEDs are the newest generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree s proprietary optical design and device submount technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die-attachable with conductive adhesive, solder paste or solder preforms, as well as flux eutectic attach. These vertically structured, low forward voltage LED chips are approximately 7 microns in height and are tested for conformity to optical and electrical specifications. Cree s EZ chips are useful in a broad range of applications such as general illumination, automotive lighting and mobile flash. FEATURES Lambertian Radiation Pattern Anode-up design (p-pad up) EZBright LED Technology, 35 ma 45 nm mw 46 nm mw Low Forward Voltage (Vf) 3. V Typical at 35 ma Maximum DC Forward Current 5 ma Backside Metal versions for various attach methods: -A (AuSn) for use with Conductive Adhesives, Flux Eutectic Attach, Solder Paste & Solder Preforms -G (LTDA) for Low Temperature Flux Eutectic Attach APPLICATIONS General Illumination Aircraft Decorative Lighting Task Lighting Outdoor Illumination White LEDs Projection Displays Automotive Exterior Mobile Flash CxxxEZ35-Sxxx-x Chip Diagram 33 x 33 µm Mesa (Junction), 3 x 3 µm Bond pads (2), 3 x 3 µm Anode (+), 2 places Backside Ohmic Metallization Data Sheet: CPR3FY Rev A Thickness, 7 µm Cathode (-) Top View Side View Bottom View Subject to change without notice.
2 Maximum Ratings at T A = 25 C Note CxxxEZ35-Sxxx-x DC Forward Current 5 ma Peak Forward Current (/ duty khz) 2 ma LED Junction Temperature 5 C Reverse Voltage 5 V Operating Temperature Range -4 C to + C LED Chip Storage Temperature -4 C to +2 C Recommended Die Sheet Storage Conditions 3 C / 85% RH Typical Electrical/Optical Characteristics at T A = 25 C, If = 35 ma Note 2 Part Number Forward Voltage (V f, V) Reverse Current [I(Vr=5V), μa] Full Width Half Max (λ D, nm) Min. Typ. Max. Max. Typ. C45EZ35-Sxxxx-x C46EZ35-Sxxxx-x Mechanical Specifications CxxxEZ35-Sxxx-x Description Dimensions Tolerance P-N Junction Area (μm) 3 x 3 ± 35 Chip Area (μm) 33 x 33 ± 35 Chip Thickness (μm) 7 ± 25 Top Au Bond Pad (μm) - Qty. 2 3 x 3 ± 25 Au Bond Pad Thickness (μm) 3. ±.5 Backside Ohmic Metal Area (μm) 33 x 33 ± 35 Backside Ohmic Metal Thickness (μm) 3.3 ±.5 Notes:. Maximum ratings are package-dependent. The above ratings were determined using a silicone encapsulated chip on MCPCB for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325 C (< 5 seconds). See Cree EZBright Applications Note for assembly-process information. 2. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 35 ma within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics were measured in an integrating sphere using Illuminance E. 3. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. Maximum Operating Current (ma) Rth j-a = 5 C/W Rth j-a = C/W Rth j-a = 5 C/W Rth j-a = 2 C/W Ambient Temperature ( C) 25 All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and EZBright are registered trademarks, and EZ and EZ35-p are trademarks of 2 CPR3FY Rev A (252)
3 Standard Bins for CxxxEZ35-Sxxx-x LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ35-Sxxx-x) orders may be filled with any or all bins (CxxxEZ35-xxx-x) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 35 ma. Radiant flux values are measured using Au-plated headers without an encapsulant. C45EZ35-S56-x Radiant Flux (mw) C45EZ x C45EZ x C45EZ x C45EZ x C45EZ35-22-x C45EZ x C45EZ x C45EZ x C45EZ35-27-x C45EZ35-28-x C45EZ35-29-x C45EZ35-22-x C45EZ35-23-x C45EZ35-24-x C45EZ35-25-x C45EZ35-26-x C45EZ35-29-x C45EZ35-2-x C45EZ35-2-x C45EZ35-22-x C45EZ35-25-x C45EZ35-26-x C45EZ35-27-x C45EZ35-28-x Dominant Wavelength (nm) C46EZ35-S56-x Radiant Flux (mw) C46EZ x C46EZ x C46EZ x C46EZ x C46EZ35-22-x C46EZ x C46EZ x C46EZ x C46EZ35-27-x C46EZ35-28-x C46EZ35-29-x C46EZ35-22-x C46EZ35-23-x C46EZ35-24-x C46EZ35-25-x C46EZ35-26-x C46EZ35-29-x C46EZ35-2-x C46EZ35-2-x C46EZ35-22-x C46EZ35-25-x C46EZ35-26-x C46EZ35-27-x C46EZ35-28-x Dominant Wavelength (nm) 25 All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and EZBright are registered trademarks, and EZ and EZ35-p are trademarks of 3 CPR3FY Rev A (252)
4 Characteristic Curves, T A = 25 C This is a representative measurement for the EZ35 LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Relative Light Intensity 5% 4% 3% 2% % % Relative Intensity vs. Forward Current Relative Light Intensity Relative Light Intensity Vs Junction Temperature % 95% 9% 85% 8% 75% 2 Wavelength Shift vs. Forward Current Dominant Wavelength Shift Vs Junction Temperature 6 DW Shift (nm) DW Shift (nm) Forward Current vs. Forward Voltage Vf (V) Voltage Shift (V) Voltage Shift Vs Junction Temperature All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and EZBright are registered trademarks, and EZ and EZ35-p are trademarks of 4 CPR3FY Rev A (252)
5 Radiation Pattern This is a representative radiation pattern for the EZ LED products. Actual patterns will vary slightly for each chip. 25 All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and EZBright are registered trademarks, and EZ and EZ35-p are trademarks of 5 CPR3FY Rev A (252)
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