FOD2742A, FOD2742B, FOD2742C Optically Isolated Error Amplifier

Size: px
Start display at page:

Download "FOD2742A, FOD2742B, FOD2742C Optically Isolated Error Amplifier"

Transcription

1 FOD4A, FOD4B, FOD4C Optically Isolated Error Amplifier Features Optocoupler, precision reference and error amplifier in single package. reference CTR 100% to 00%,00 RMS isolation UL approval E9000, olume BSI approval 1, DE approval 11 CSA approval 1114 Low temperature coefficient 0 ppm/ C max. FOD4A: tolerance 0.% FOD4B: tolerance 1% FOD4C: tolerance % Applications Power supplies regulation DC to DC converters Schematic Description April 009 The FOD4 Optically Isolated Amplifier consists of the popular KA41 precision programmable shunt reference and an optocoupler. The optocoupler is a gallium arsenide (GaAs) light emitting diode optically coupled to a silicon phototransistor. It comes in grades of reference voltage tolerance = %, 1%, and 0.%. The Current Transfer Ratio (CTR) ranges from 100% to 00%. It also has an outstanding temperature coefficient of 0 ppm/ C. It is primarily intended for use as the error amplifier/reference voltage/optocoupler function in isolated ac to dc power supplies and dc/dc converters. When using the FOD4, power supply designers can reduce the component count and save space in tightly packaged designs. The tight tolerance reference eliminates the need for adjustments in many applications. The device comes in a -pin small outline package. Package Outline NC 1 LED C FB E COMP NC 4 GND FOD4A, FOD4B, FOD4C Rev

2 Pin Definitions Pin Number Pin Name Functional Description 1 NC Not connected C Phototransistor Collector E Phototransistor Emitter 4 NC Not connected GND Ground COMP Error Amplifier Compensation. This pin is the output of the error amplifier.* FB oltage Feedback. This pin is the inverting input to the error amplifier LED Anode LED. This pin is the input to the light emitting diode. *The compensation network must be attached between pins and. Typical Application 1 FAN40 PWM Control FOD4 R1 O R FOD4A, FOD4B, FOD4C Rev

3 Absolute Maximum Ratings (T A = C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter alue Units T STG Storage Temperature -40 to +1 C T OPR Operating Temperature - to + C Reflow Temperature Profile (refer to 1) LED Input oltage I LED Input DC Current 0 ma CEO Collector-Emitter oltage 0 ECO Emitter-Collector oltage I C Collector Current 0 ma PD1 Input Power Dissipation (1) 14 mw PD Transistor Power Dissipation () mw PD Total Power Dissipation () 14 mw Notes: 1. Derate linearly from C at a rate of.4mw/ C. Derate linearly from C at a rate of 1.4mW/ C.. Derate linearly from C at a rate of.4mw/ C. FOD4A, FOD4B, FOD4C Rev

4 Electrical Characteristics (T A = C unless otherwise specified) Input Characteristics Symbol Parameter Test Conditions Device Min. Typ. Max. Unit F LED Forward oltage I LED = 10mA, COMP = FB (Fig. 1) All REF Reference oltage I LED = 10mA, COMP = FB (Fig. 1) A B C REF (DE) Deviation of REF Over Temperature T A = - C to + C (Fig. 1) All. 1 m RE COMP Ratio of REF ariation to the Output of the Error Amplifier I LED = 10mA (Fig. ) COMP = 10 to REF All m/ COMP = to I REF Feedback Input Current I LED = 10mA, R 1 = 10KΩ (Fig. ) All. 4 µa I REF (DE) Deviation of I REF Over T A = - C to + C (Fig. ) All µa Temperature I LED (MIN) Minimum Drive Current COMP = FB (Fig. 1) All ma I (OFF) Off-state Error Amplifier Current LED =, FB = 0 (Fig. 4) All µa Z OUT Error Amplifier Output Impedance (see note ) COMP = REF, I LED = 1mA to 0mA, f 1.0kHz All Ω Notes: 1. The deviation parameters REF(DE) and I REF(DE) are defined as the differences between the maximum and minimum values obtained over the rated temperature range. The average full-range temperature coefficient of the reference input voltage, REF, is defined as: REF ( ppm/ C) { REF( DE) / REF ( T A = C) } 10 = T A where T A is the rated operating free-air temperature range of the device.. The dynamic impedance is defined as Z OUT = COMP / I LED. When the device is operating with two external resistors (see Figure ), the total dynamic impedance of the circuit is given by: Z OUT, TOT = Z I OUT 1 + R R FOD4A, FOD4B, FOD4C Rev

5 Electrical Characteristics (T A = C unless otherwise specified) (Continued) Output Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit I CEO Collector Dark Current CE = 10 (Fig. ) 1 0 na B ECO Emitter-Collector oltage I E = 100µA 10 Breakdown B CEO Collector-Emitter oltage Breakdown I C = 1.0mA 0 10 Transfer Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit CTR Current Transfer Ratio I LED = 10mA, COMP = FB, CE = (Fig. ) CE (SAT) Collector-Emitter I LED = 10mA, COMP = FB, Saturation oltage I C =.ma (Fig. ) Isolation Characteristics % Symbol Parameter Test Conditions Min. Typ. Max. Unit I I-O Input-Output Insulation Leakage Current RH = 4%, T A = C, t = s, I-O = 000 DC (Note 1) 1.0 µa ISO Withstand Insulation oltage RH 0%, T A = C, 00 rms t = 1 min. (Note 1) R I-O Resistance (Input to Output) I-O = 00 DC (Note 1) 10 1 Ω Switching Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit B W Bandwidth Fig. 0 khz CMH Common Mode Transient I LED = 0mA, cm = 10 PP 1.0 k/µs Immunity at Output HIGH RL =.kω (Fig. ) (Note ) CML Common Mode Transient Immunity at Output LOW I LED = 10mA, cm = 10 PP RL =.kω (Fig. ) (Note ) 1.0 k/µs Notes: 1. Device is considered as a two terminal device: Pins 1,, and 4 are shorted together and Pins,, and are shorted together.. Common mode transient immunity at output high is the maximum tolerable (positive) dcm/dt on the leading edge of the common mode impulse signal, cm, to assure that the output will remain high. Common mode transient immunity at output low is the maximum tolerable (negative) dcm/dt on the trailing edge of the common pulse signal,cm, to assure that the output will remain low. FOD4A, FOD4B, FOD4C Rev

6 Test Circuits I (LED) F REF Figure 1. REF, F, I LED (min) Test Circuit I (LED) I REF R1 Figure. I REF Test Circuit I (LED) R1 COMP R REF Figure. REF/ COMP Test Circuit I (OFF) (LED) Figure 4. I (OFF) Test Circuit I CEO I (LED) I (C) CE CE COMP REF Figure. I CEO Test Circuit Figure. CTR, CE(sat) Test Circuit FOD4A, FOD4B, FOD4C Rev

7 Test Circuits (Continued) OUT CC = + DC R L CC = + DC R1.kΩ I F = 10 ma 0.1 PP Figure. Frequency Response Test Circuit 1µf I F = 0 ma (A) I F = 10 ma (B) 4Ω IN 0.4 OUT A B 4 _ CM + 10 P-P Figure. CMH and CML Test Circuit FOD4A, FOD4B, FOD4C Rev

8 Typical Performance Curves REF REFERENCE OLTAGE () ILED SUPPLY CURRENT (ma) Fig. 9a LED Current vs. Cathode oltage COMP CATHODE OLTAGE () T A = C COMP = FB Fig. 10 Reference oltage vs. Ambient Temperature I LED = 10mA T A AMBIENT TEMPERATURE ( C) ILED SUPPLY CURRENT (ma) IREF REFERENCE CURRENT (µa) T A = C COMP = FB Fig. 9b LED Current vs. Cathode oltage COMP CATHODE OLTAGE () Fig. 11 Reference Current vs Ambient Temperature I LED = 10mA R1 = 10kΩ T A AMBIENT TEMPERATURE( C) IOFF OFF-STATE CURRENT (na) Fig. 1 Off-State Current vs. Ambient Temperature LED = IF FORWARD CURRENT (ma) Fig. 1 Forward Current vs. Forward oltage C 0 C 0 C T A AMBIENT TEMPERATURE ( C) F FORWARD OLTAGE () FOD4A, FOD4B, FOD4C Rev

9 Typical Performance Curves (Continued) (IC/IF) CURRENT TRANSFER RATIO (%) ICEO DARK CURRENT (na) Fig. 14 Dark Current vs. Ambient Temperature 1000 CE = T A AMBIENT TEMPERATURE ( C) Fig. 1 Current Transfer Ratio vs. LED Current 10 CE = C C 10 0 C I LED FORWARD CURRENT (ma) IC COLLECTOR CURRENT (ma) CE(sat) SATURATION OLTAGE () Fig. 1 Collector Current vs. Ambient Temperature CE = I LED = 1mA T A AMBIENT TEMPERATURE ( C) I LED = 10mA I C =.ma I LED = 0mA I LED = 10mA I LED = ma Fig. 1 Saturation oltage vs. Ambient Temperature T A AMBIENT TEMPERATURE ( C) IC COLLECTOR CURRENT (ma) Fig. 1 Collector Current vs. Collector oltage T A = C 0 I LED = 0mA 0 I LED = 10mA 1 10 I LED = ma I LED = 1mA CE COLLECTOR-EMITTER OLTAGE () ref / out ( m/) Fig. 19 Rate of Change ref to out vs. Temperature TEMPERATURE ( C) FOD4A, FOD4B, FOD4C Rev

10 Typical Performance Curves (Continued) OLTAGE GAIN (db) CC = 10 I F = 10mA Fig. 0 oltage Gain vs. Frequency RL = 1kΩ RL = 100Ω RL = 00Ω FREQUENCY (khz) FOD4A, FOD4B, FOD4C Rev

11 The FOD4 The FOD4 is an optically isolated error amplifier. It incorporates three of the most common elements necessary to make an isolated power supply, a reference voltage, an error amplifier, and an optocoupler. It is functionally equivalent to the popular KA41 shunt voltage regulator plus the CNY1F-X optocoupler. Powering the Secondary Side The LED pin in the FOD4 powers the secondary side, and in particular provides the current to run the LED. The actual structure of the FOD4 dictates the minimum voltage that can be applied to the LED pin: The error amplifier output has a minimum of the reference voltage, and the LED is in series with that. Minimum voltage applied to the LED pin is thus = 4.0. This voltage can be generated either directly from the output of the converter, or else from a slaved secondary winding. The secondary winding will not affect regulation, as the input to the FB pin may still be taken from the output winding. The LED pin needs to be fed through a current limiting resistor. The value of the resistor sets the amount of current through the LED, and thus must be carefully selected in conjunction with the selection of the primary side resistor. Feedback Output voltage of a converter is determined by selecting a resistor divider from the regulated output to the FB pin. The FOD4 attempts to regulate its FB pin to the reference voltage,.. The ratio of the two resistors should thus be: R TOP = R BOTTOM OUT 1 REF The absolute value of the top resistor is set by the input offset current of.µa. To achieve 0.% accuracy, the resistance of R TOP should be: OUT > 1040µA R TOP Compensation The compensation pin of the FOD4 provides the opportunity for the designer to design the frequency response of the converter. A compensation network may be placed between the COMP pin and the FB pin. In typical low-bandwidth systems, a 0.1µF capacitor may be used. For converters with more stringent requirements, a network should be designed based on measurements of the system s loop. An excellent reference for this process may be found in Practical Design of Power Supplies by Ron Lenk, IEEE Press, 199. Secondary Ground The GND pin should be connected to the secondary ground of the converter. No Connect Pins The NC pins have no internal connection. They should not have any connection to the secondary side, as this may compromise the isolation structure. Photo-Transistor The Photo-transistor is the output of the FOD4. In a normal configuration the collector will be attached to a pull-up resistor and the emitter grounded. There is no base connection necessary. The value of the pull-up resistor, and the current limiting resistor feeding the LED, must be carefully selected to account for voltage range accepted by the PWM IC, and for the variation in current transfer ratio (CTR) of the opto-isolator itself. Example: The voltage feeding the LED pins is +1, the voltage feeding the collector pull-up is +10, and the PWM IC is the Fairchild KA1H00, which has a reference. If we select a 10K resistor for the LED, the maximum current the LED can see is: (1-4) /10KΩ = 00µA. The CTR of the opto-isolator is a minimum of 100%, so the minimum collector current of the photo-transistor when the diode is full on is also 00µA. The collector resistor must thus be such that: < 00 µa or R R COLLECTOR >.KΩ; COLLECTOR select 1KΩ to allow some margin. FOD4A, FOD4B, FOD4C Rev

12 Package Dimensions -pin SOIC Surface Mount SEATING PLANE 0.14 (.) 0.1 (.1) Recommended Pad Layout 0.01 (0.) (0.) 0.0 (.1) 0.1 (4.) Lead Coplanarity: (0.10) MAX (1.) Typ (4.1) (.) 0.00 (0.0) 0.00 (0.0) 0.04 (0.1) 0.44 (.19) 0.4 (.9) (0.) 0.00 (0.1) 0.00 (1.) 0. (.99) 0.1 (.94) 0.00 (1.) Dimensions in inches (mm). Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: FOD4A, FOD4B, FOD4C Rev

13 Ordering Information Option Order Entry Identifier Description DE 04 R R Tape and reel (00 units per reel) R R DE 04, Tape and reel (00 units per reel) Marking Information Definitions 1 X 4A YY 4 1 Fairchild logo Device number DE mark (Note: Only appears on parts ordered with DE option See order entry table) 4 One digit year code, e.g., Two digit work week ranging from 01 to Assembly package code S FOD4A, FOD4B, FOD4C Rev

14 Carrier Tape Specifications.0 ± ± ± MAX 4.0 ± ± MAX.40 ± 0.0 User Direction of Feed Dimensions in mm Ø1. MIN 1. ± ± ± 0..0 ± 0.0 Ø1. ± 0.1 FOD4A, FOD4B, FOD4C Rev

15 Reflow Profile Temperature ( C) TP TL Tsmax Tsmin Max. Ramp-up Rate = C/S Max. Ramp-down Rate = C/S Preheat Area Time C to Peak Time (seconds) Profile Freature Pb-Free Assembly Profile Temperature Min. (Tsmin) 10 C Temperature Max. (Tsmax) 00 C Time (t S ) from (Tsmin to Tsmax) 0 10 seconds Ramp-up Rate (t L to t P ) C/second max. Liquidous Temperature (T L ) 1 C Time (t L ) Maintained Above (T L ) 0 10 seconds ts tl tp Peak Body Package Temperature Time (t P ) within C of 0 C Ramp-down Rate (T P to T L ) Time C to Peak Temperature 0 C +0 C / C 0 seconds C/second max. minutes max. FOD4A, FOD4B, FOD4C Rev

16 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries,and is not intended to be an exhaustive list of all such trademarks. Auto-SPM Build it Now CorePLUS CorePOWER CROSSOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH * * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR PDP SPM Power-SPM PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. Saving our world, 1mW/W/kW at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT - SuperSOT - SuperSOT - SupreMOS SyncFET Sync-Lock * The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT * µserdes UHC Ultra FRFET UniFET CX isualmax XS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COERSTHESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical andproduct information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative / In Design First Production Full Production Not In Production Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. FOD4A, FOD4B, FOD4C Rev Rev. I40

QRE1113, QRE1113GR Minature Reflective Object Sensor

QRE1113, QRE1113GR Minature Reflective Object Sensor QRE1113, QRE1113GR Minature Reflective Object Sensor Features Phototransistor output No contact surface sensing Miniature package Lead form style: Gull Wing QRE1113GR Package Dimensions 1.80 2.90 2.50

More information

BD135 / 137 / 139 NPN Epitaxial Silicon Transistor

BD135 / 137 / 139 NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features Complement to BD136, BD138 and BD140 respectively Applications Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base August

More information

TIP41A / TIP41B / TIP41C NPN Epitaxial Silicon Transistor

TIP41A / TIP41B / TIP41C NPN Epitaxial Silicon Transistor TIP41A / TIP41B / TIP41C NPN Epitaxial Silicon Transistor Features Medium Power Linear Switching Applications Complement to TIP42 Series Ordering Information 1 TO-220 1.Base 2.Collector 3.Emitter November

More information

SS32 - S310 Schottky Rectifier

SS32 - S310 Schottky Rectifier SS32 - S310 Schottky Rectifier Features Metal to Silicon Rectifiers, Majority Carrier Conduction Low-Forward Voltage Drop Easy Pick and Place High-Surge Current Capability Description October 2013 The

More information

MBR20200CT Dual High Voltage Schottky Rectifier

MBR20200CT Dual High Voltage Schottky Rectifier MBR20200CT Dual High Voltage Schottky Rectifier Features Low Forward Voltage Drop Low Power Loss and High Efficiency High Surge Capability RoHS Compliant Matte Tin (Sn) Lead Finish Terminal Leads Surface

More information

1N5401-1N5408 General-Purpose Rectifiers

1N5401-1N5408 General-Purpose Rectifiers N540 - N5408 General-Purpose Rectifiers Features 3.0 A Operation at T A = 75 C with No Thermal Runaway High Current Capability Low Leakage DO-20AD COLOR BAND DENOTES CATHODE August 205 N540 - N5408 General-Purpose

More information

P6KE6V8(C)A - P6KE440(C)A 600 W Transient Voltage Suppressors

P6KE6V8(C)A - P6KE440(C)A 600 W Transient Voltage Suppressors P6KE6V8(C)A - P6KE440(C)A 600 W Transient Suppressors Features Glass-Passivated Junction 600 W Peak Pulse Power Capability at 1.0 ms Excellent Clamping Capability Low Incremental Surge Resistance Fast

More information

FODM3011, FODM3012, FODM3022, FODM3023, FODM3052, FODM3053 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers

FODM3011, FODM3012, FODM3022, FODM3023, FODM3052, FODM3053 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers April 9 FODM311, FODM31, FODM3, FODM33, FODM35, FODM353 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers Features Compact 4-pin surface mount package (.4 mm maximum standoff

More information

MID400 AC Line Monitor Logic-Out Device

MID400 AC Line Monitor Logic-Out Device MID400 AC Line Monitor Logic-Out Device Features Direct operation from any line voltage with the use of an external resistor. Externally adjustable time delay Externally adjustable AC voltage sensing level

More information

BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor

BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor Features Switching and Amplifier High-oltage: BC546, CEO = 65 Low-Noise: BC549, BC550 Complement to BC556, BC557, BC558, BC559, and

More information

FGH40N60UFD 600 V, 40 A Field Stop IGBT

FGH40N60UFD 600 V, 40 A Field Stop IGBT FGH4N6UFD 6 V, 4 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.8 V @ I C = 4 A High Input Impedance Fast Switching RoHS Compliant Applications Solar Inverter, UPS,

More information

SS22 - S210 Schottky Rectifier

SS22 - S210 Schottky Rectifier SS22 - S210 Schottky Rectifier Features Glass-Passivated Junctions High-Current Capability, Low V F Applications Low Voltage High-Frequency Inverters Free Wheeling Polarity Protection Description October

More information

LM78XX / LM78XXA 3-Terminal 1 A Positive Voltage Regulator

LM78XX / LM78XXA 3-Terminal 1 A Positive Voltage Regulator LM78XX / LM78XXA 3-Terminal A Positive oltage Regulator Features Output Current up to A s: 5, 6, 8, 9, 0,, 5, 8, 4 Thermal Overload Protection Short-Circuit Protection Output Transistor Safe Operating

More information

CD4040BC, 12-Stage Ripple Carry Binary Counters CD4060BC, 14-Stage Ripple Carry Binary Counters

CD4040BC, 12-Stage Ripple Carry Binary Counters CD4060BC, 14-Stage Ripple Carry Binary Counters CD4040BC, 12-Stage Ripple Carry Binary Counters CD4060BC, 14-Stage Ripple Carry Binary Counters Features Wide supply voltage range: 3.0V to 15V High noise immunity: 0.45 V DD (Typ.) Low power TTL compatibility:

More information

FMBS2383 NPN Epitaxial Silicon Transistor

FMBS2383 NPN Epitaxial Silicon Transistor FMBS2383 NPN Epitaxial Silicon Transistor Features Power Amplifier ollector-emitter Voltage : V EO =60V urrent Gain Bandwidth Product : f T =20MHz SuperSOT TM -6 E B 2 3 6 5 4 April 20 Marking : 2383 Absolute

More information

S1A - S1M General Purpose Rectifiers

S1A - S1M General Purpose Rectifiers S1A - S1M General Purpose Rectifiers Features 1 AI F(AV) Current Rating Glass Passivated Low Leakage: - 1 μa Maximum at 25 C - 50 μa Maximum at 125 C Fast Response: 1.8 μs (Typical) 30 A Surge Rating 50

More information

74LVX132 Low Voltage Quad 2-Input NAND Schmitt Trigger

74LVX132 Low Voltage Quad 2-Input NAND Schmitt Trigger 74LVX132 Low Voltage Quad 2-Input NAND Schmitt Trigger Features Input voltage level translation from 5V to 3V Ideal for low power/low noise 3.3V applications Guaranteed simultaneous switching noise level

More information

FDD4243 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mΩ Features

FDD4243 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mΩ Features FDD443 4V P-Channel PowerTrench MOSFET -4V, -4A, 44mΩ Features Max r DS(on) = 44mΩ at V GS = -V, I D = -6.7A Max r DS(on) = 64mΩ at V GS = -4.5V, I D = -5.5A High performance trench technology for extremely

More information

RS1A - RS1M Fast Rectifiers

RS1A - RS1M Fast Rectifiers RSA - RSM Fast Rectifiers Features Glass-Passivated Junction For Surface Mounted Applications uilt-in Strain Relief, Ideal for Automated Placement UL Certified: Certificate # E326243 SMA/DO-24AC COLOR

More information

Applications. Pin 1 TOP. WL-CSP 0.8X0.8 Thin

Applications. Pin 1 TOP. WL-CSP 0.8X0.8 Thin FDZ66PZ P-Channel.5 V Specified PowerTrench Thin WL-CSP MOSFET - V, -.6 A, 4 mω Features Max r DS(on) = 4 mω at V GS = -4.5 V, I D = - A Max r DS(on) = 8 mω at V GS = -.5 V, I D = -.5 A Max r DS(on) =

More information

BD434/436/438. Symbol Parameter Value Units V CBO Collector-Base Voltage : BD434 : BD436 : BD438

BD434/436/438. Symbol Parameter Value Units V CBO Collector-Base Voltage : BD434 : BD436 : BD438 Medium Power Linear and Switching Applications Complement to BD433, BD435 and BD437 respectively 1 TO26 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25 C

More information

FSAL200 Wide Bandwidth Quad 2:1 Analog Multiplexer / De-multiplexer Switch

FSAL200 Wide Bandwidth Quad 2:1 Analog Multiplexer / De-multiplexer Switch FSAL200 Wide Bandwidth Quad 2:1 Analog Multiplexer / De-multiplexer Switch Features Typical 6Ω Switch Connection Between Two Ports Minimal Propagation Delay Through the Switch Low I CC Zero Bounce in Flow-Through

More information

Features. I-PAK FQU Series

Features. I-PAK FQU Series 00V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced

More information

FPF2163/4/5 Full Function Load Switch with Adjustable Current Limit

FPF2163/4/5 Full Function Load Switch with Adjustable Current Limit October 2008 FPF2163/4/5 Full Function Load Switch with Adjustable Current Limit Features 1.8 to 5.5V Input Voltage Range Controlled Turn-On 0.15-1.5A Adjustable Current Limit Undervoltage Lockout Thermal

More information

FQPF2N70. N-Channel QFET MOSFET 700 V, 2.0 A, 6.3 Ω. FQPF2N70 N-Channel QFET MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted.

FQPF2N70. N-Channel QFET MOSFET 700 V, 2.0 A, 6.3 Ω. FQPF2N70 N-Channel QFET MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted. FQPF2N70 N-Channel QFET MOSFET 700 V, 2.0 A, 6.3 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This

More information

74VHC112 Dual J-K Flip-Flops with Preset and Clear

74VHC112 Dual J-K Flip-Flops with Preset and Clear 74VHC112 Dual J-K Flip-Flops with Preset and Clear Features High speed: f MAX = 200MHz (Typ.) at V CC = 5.0V Low power dissipation: I CC = 2µA (Max.) at T A = 25 C High noise immunity: V NIH = V NIL =

More information

Description. TO-220F FDPF Series. Symbol Parameter FDP26N40 FDPF26N40 Units V DSS Drain to Source Voltage 400 V V GSS Gate to Source Voltage ±30 V

Description. TO-220F FDPF Series. Symbol Parameter FDP26N40 FDPF26N40 Units V DSS Drain to Source Voltage 400 V V GSS Gate to Source Voltage ±30 V FDP26N40 / FDPF26N40 N-Channel MOSFET 400V, 26A, 0.6Ω Features R DS(on) = 0.3Ω ( Typ.)@ V GS = 0V, I D = 3A Low gate charge ( Typ. 48nC) Low C rss ( Typ. 30pF) Fast switching 00% avalanche tested Improved

More information

FOD060L, FOD260L 3.3V/5V High Speed-10 MBit/s Logic Gate Optocouplers

FOD060L, FOD260L 3.3V/5V High Speed-10 MBit/s Logic Gate Optocouplers FOD060L, FOD260L 3.3V/5V High Speed-0 MBit/s Logic Gate Optocouplers Features FOD060L in SO8 and FOD260L in 8-pin DIP Very high speed 0 MBit/s Superior CMR 50 kv/µs at,000v peak Fan-out of 8 over -40 C

More information

PHOTOTRANSISTOR OPTOCOUPLERS

PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2E MCT20 MCT27 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor

More information

BDX33/A/B/C. Symbol Parameter Value Units V CBO Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C

BDX33/A/B/C. Symbol Parameter Value Units V CBO Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C Power Linear and Switching Applications High Gain General Purpose Power Darlington TR Complement to BDX34/34A/34B/34C respectively 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor

More information

BC517 NPN Darlington Transistor

BC517 NPN Darlington Transistor B517 NPN Darlington Transistor Features This device is designed for applications requiring extremely high current gain at currents to 1. A. Sourced from process 5. 1 2 3 1 2 3 September 215 TO-92 1. ollector

More information

Symbol Parameter Ratings Units V DSS Drain-to-Source Voltage 80 V V GS Gate-to-Source Voltage ±20 V Drain Current - Continuous (V

Symbol Parameter Ratings Units V DSS Drain-to-Source Voltage 80 V V GS Gate-to-Source Voltage ±20 V Drain Current - Continuous (V FDBL8636_F85 N-Channel PowerTrench MOSFET 8 V, 3 A,.4 mω Features Typical R DS(on) =. mω at V GS = V, I D = 8 A Typical Q g(tot) = 72 nc at V GS = V, I D = 8 A UIS Capability RoHS Compliant Qualified to

More information

FDS6679AZ P-Channel PowerTrench MOSFET -30V, -13A, 9mΩ General Description

FDS6679AZ P-Channel PowerTrench MOSFET -30V, -13A, 9mΩ General Description FS6679AZ P-Channel PowerTrench MOSFET -3V, -3A, 9mΩ General escription This P-Channel MOSFET is producted using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored

More information

N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted

N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted October 5 BSS38 BSS38 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary,

More information

FQP5N60C / FQPF5N60C N-Channel QFET MOSFET

FQP5N60C / FQPF5N60C N-Channel QFET MOSFET FQP5N60C / FQPF5N60C N-Channel QFET MOSFET 600 V, 4.5 A,.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology.

More information

Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package

Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package FEATURES A 4 C Low profile package High collector emitter voltage, V CEO = 8 V 7295-6 DESCRIPTION The has a GaAs infrared

More information

4N25 Phototransistor Optocoupler General Purpose Type

4N25 Phototransistor Optocoupler General Purpose Type 4N Phototransistor Optocoupler General Purpose Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes a lead-free product Description The 4N is an

More information

Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package

Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package ILD25T, ILD26T, ILD27T, ILD211T, ILD213T Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package i17925 A1 C2 A3 C4 i17918-2 8C 7E 6C 5E DESCRIPTION The ILD25T, ILD26T, ILD27T, ILD211T, and ILD213T

More information

Y.LIN ELECTRONICS CO.,LTD.

Y.LIN ELECTRONICS CO.,LTD. Features Current transfer ratio (CTR 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection 4N25, 4N26, 4N27, 4N28 Optocoupler, Phototransistor Output, FEATURES A 6 B Isolation test voltage 5000 V RMS Interfaces with common logic families C 2 5 C Input-output coupling capacitance < pf NC 3 4

More information

MJD122 NPN Silicon Darlington Transistor

MJD122 NPN Silicon Darlington Transistor MJD NPN Silicon Darlington Transistor eatures D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead ormed for Surface Mount Applications Electrically Similar to

More information

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS DESCRIPTION The, /6 single-channel and /6 dual-channel optocouplers consist of a 5 nm AlGaAS LED, optically coupled to a very high speed integrated photodetector logic gate with a strobable output. This

More information

Optocoupler, Phototransistor Output, AC Input

Optocoupler, Phototransistor Output, AC Input Optocoupler, Phototransistor Output, AC Input DESCRIPTION The SFH62A (DIP) and SFH626 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have

More information

Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package

Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package Optocoupler, Phototransistor Output, FEATURES High BV CEO, 70 V Vishay Semiconductors i79002 A K NC NC 2 3 4 8 7 6 5 NC B C E Isolation test voltage, 4000 V RMS Industry standard SOIC-8A surface mountable

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection HA/HA2/HA3/HA4/HA5 FEATURES Interfaces with common logic families Input-output coupling capacitance < pf Industry standard dual-in line 6-pin package A C NC 2 3 6 5 4 B C E Isolation test voltage: 5300

More information

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO SFH64 Optocoupler, Phototransistor Output, with Base Connection, 3 V BV CEO i1794-3 DESCRIPTION The SFH64 is an optocoupler with very high BV CER, a minimum of 3 V. It is intended for telecommunications

More information

SMCJ5V0(C)A - SMCJ170(C)A 1500 Watt Transient Voltage Suppressors

SMCJ5V0(C)A - SMCJ170(C)A 1500 Watt Transient Voltage Suppressors SMCJ5V0(C)A - SMCJ170(C)A 1500 Watt Transient Suppressors Features Glass-Passivated Junction 1500 W Peak Pulse Power Capability on 10/0 μs Waveform. Excellent Clamping Capability Low-Incremental Surge

More information

BUZ11. 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET. Features. [ /Title (BUZ1 1) /Subject. (30A, 50V, 0.040 Ohm, N- Channel. Ordering Information

BUZ11. 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET. Features. [ /Title (BUZ1 1) /Subject. (30A, 50V, 0.040 Ohm, N- Channel. Ordering Information Data Sheet June 1999 File Number 2253.2 [ /Title (BUZ1 1) /Subject (3A, 5V,.4 Ohm, N- Channel Power MOS- FET) /Autho r () /Keywords (Intersil Corporation, N- Channel Power MOS- FET, TO- 22AB ) /Creator

More information

Features. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1b) 0.46

Features. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1b) 0.46 N-Channel.8 Vgs Specified PowerTrench MOSFET October 2 General Description This 2V N-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management applications.

More information

TLP521 1,TLP521 2,TLP521 4

TLP521 1,TLP521 2,TLP521 4 TLP2,TLP2 2,TLP2 4 TOSHIBA Photocoupler GaAs Ired & Photo Transistor TLP2,TLP2 2,TLP2 4 Programmable Controllers AC/DC Input Module Solid State Relay Unit in mm The TOSHIBA TLP2, 2 and 4 consist of a photo

More information

Optocoupler, Photodarlington Output, Dual Channel, SOIC-8 Package

Optocoupler, Photodarlington Output, Dual Channel, SOIC-8 Package Optocoupler, Photodarlington Output, i179042 DESCRIPTION A1 C 2 A3 C4 8 C 7E 6C 5E The ILD233T is a high current transfer ratio (CTR) optocoupler. It has a gallium arsenide infrared LED emitter and silicon

More information

Features. TA=25 o C unless otherwise noted

Features. TA=25 o C unless otherwise noted NDSAN N-Channel, Logic Level, PowerTrench MOSFET June NDSAN General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been

More information

Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS, Low Input Current

Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS, Low Input Current Optocoupler, Phototransistor Output, High Reliability, 53 V RMS, Low Input Current FEATURES A C 1 2 4 3 C E Operating temperature from -55 C to +11 C Good CTR linearity depending on forward current Isolation

More information

K817P/ K827PH/ K847PH. Optocoupler with Phototransistor Output. Vishay Semiconductors. Description. Applications. Features.

K817P/ K827PH/ K847PH. Optocoupler with Phototransistor Output. Vishay Semiconductors. Description. Applications. Features. Optocoupler with Phototransistor Output Description The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16 lead plastic

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection Optocoupler, Phototransistor Output, with Base Connection FEATURES i794-4 DESCRIPTION This datasheet presents five families of Vishay industry standard single channel phototransistor couplers. These families

More information

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor November 995 N7 / N7 / NS7A N-Channel Enhancement Mode Field Effect Transistor General escription Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary,

More information

TLP504A,TLP504A 2. Programmable Controllers AC / DC Input Module Solid State Relay. Pin Configurations (top view) 2002-09-25

TLP504A,TLP504A 2. Programmable Controllers AC / DC Input Module Solid State Relay. Pin Configurations (top view) 2002-09-25 TOSHIBA Photocoupler GaAs Ired & Photo Transistor TLP4A,TLP4A 2 TLP4A,TLP4A 2 Programmable Controllers AC / DC Input Module Solid State Relay Unit in mm The TOSHIBA TLP4A and TLP4A 2 consists of a photo

More information

Features 1.7 A, 20 V. R DS(ON) Symbol Parameter Ratings Units

Features 1.7 A, 20 V. R DS(ON) Symbol Parameter Ratings Units N-Channel.5V Specified PowerTrench TM MOSFET April 999 General Description This N-Channel.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially

More information

IRF510. 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002

IRF510. 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002 IRF5 Data Sheet January 22 5.6A, V,.5 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed

More information

TLP281,TLP281-4 TLP281,TLP281-4 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE PC CARD MODEM(PCMCIA) Pin Configuration (top view) 2007-10-01

TLP281,TLP281-4 TLP281,TLP281-4 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE PC CARD MODEM(PCMCIA) Pin Configuration (top view) 2007-10-01 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR,-4,-4 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE PC CARD MODEM(PCMCIA) Unit in mm and -4 is a very small and thin coupler, suitable for surface mount

More information

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection CNY7 Optocoupler, Phototransistor FEATURES Isolation test voltage 5 V RMS A 6 B Long term stability i79 C NC 5 C E Industry standard dual-in-line package Lead (Pb-free component Component in accordance

More information

IRF840. 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002

IRF840. 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002 IRF84 Data Sheet January 22 8A, 5V,.85 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed

More information

Data Sheet September 2004. Features. Packaging

Data Sheet September 2004. Features. Packaging HGTG3N6A4D Data Sheet September 24 6V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG3N6A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs

More information

BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor

BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high

More information

IRF640, RF1S640, RF1S640SM

IRF640, RF1S640, RF1S640SM IRF64, RFS64, RFS64SM Data Sheet January 22 8A, 2V,.8 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed,

More information

QFET TM FQP50N06. Features. TO-220 FQP Series

QFET TM FQP50N06. Features. TO-220 FQP Series 60V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced

More information

Features S 1. TA=25 o C unless otherwise noted. (Note 1b) 0.8

Features S 1. TA=25 o C unless otherwise noted. (Note 1b) 0.8 FC54P V P-Channel Logic Level PowerTrench MOSFET February 22 FC54P General escription This V P-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management

More information

40 V, 200 ma NPN switching transistor

40 V, 200 ma NPN switching transistor Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic

More information

TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TA = 25 C unless otherwise noted. Symbol Parameter Value Units Discrete POWER & Signal Technologies C B E TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05.

More information

FSA832 USB 2.0 High-Speed (480 Mbps) Charger Detection IC with Isolation Switch

FSA832 USB 2.0 High-Speed (480 Mbps) Charger Detection IC with Isolation Switch FSA832 USB 2.0 High-Speed (480 Mbps) Charger Detection IC with Isolation Switch Features USB Detection Proprietary Charger and Other Detection Switch Type V BUS Package Ordering Information Applications

More information

TS555. Low-power single CMOS timer. Description. Features. The TS555 is a single CMOS timer with very low consumption:

TS555. Low-power single CMOS timer. Description. Features. The TS555 is a single CMOS timer with very low consumption: Low-power single CMOS timer Description Datasheet - production data The TS555 is a single CMOS timer with very low consumption: Features SO8 (plastic micropackage) Pin connections (top view) (I cc(typ)

More information

Optocoupler, Phototransistor Output, With Base Connection

Optocoupler, Phototransistor Output, With Base Connection IL/ IL2/ IL5 Optocoupler, Phototransistor Output, With Base Connection Features Current Transfer Ratio (see order information) Isolation Test Voltage 5300 V RMS Lead-free component Component in accordance

More information

AP1509. 150KHz, 2A PWM BUCK DC/DC CONVERTER. Description. Pin Assignments V IN. Applications. Features. (Top View) GND GND. Output AP1509 GND GND

AP1509. 150KHz, 2A PWM BUCK DC/DC CONVERTER. Description. Pin Assignments V IN. Applications. Features. (Top View) GND GND. Output AP1509 GND GND Description Pin Assignments The series are monolithic IC designed for a stepdown DC/DC converter, and own the ability of driving a 2A load without additional transistor. It saves board space. The external

More information

Linear Optocoupler, High Gain Stability, Wide Bandwidth

Linear Optocoupler, High Gain Stability, Wide Bandwidth ishay Semiconductors Linear Optocoupler, High Gain Stability, Wide Bandwidth i9 DESCRIPTION The linear optocoupler consists of an AlGaAs IRLED irradiating an isolated feedback and an output PIN photodiode

More information

Preamplifier Circuit for IR Remote Control

Preamplifier Circuit for IR Remote Control Preamplifier Circuit for IR Remote Control 22906 FEATURES Carrier-out-function: carrier frequency and burst length accurately correspond to the input signal AC coupled response from 20 khz to 60 khz; all

More information

SURFACE MOUNT LED LAMP STANDARD BRIGHT 0606

SURFACE MOUNT LED LAMP STANDARD BRIGHT 0606 PACKAGE DIMENSIONS 0.075 (1.9) 0.063 (1.6) 0.035 (0.9) TOP 0.047 (1.2) 0.012 (0.3) 0.032 [0.8] SIDE 0.043 [1.1] 1 3 0.020 [0.5] 2 4 BOTTOM CATHODE MASK 1 2 3 4 HER / AlGaAs Red / Yellow (for-34) Green

More information

Features I-PAK (TO-251AA) T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units

Features I-PAK (TO-251AA) T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units F62A/FU62A 2V N-Channel PowerTrench MOSFET General escription This N-Channel MOSFET has been designed specifically to improve the overall efficiency of C/C converters using either synchronous or conventional

More information

INTEGRATED CIRCUITS. NE558 Quad timer. Product data Supersedes data of 2001 Aug 03. 2003 Feb 14

INTEGRATED CIRCUITS. NE558 Quad timer. Product data Supersedes data of 2001 Aug 03. 2003 Feb 14 INTEGRATED CIRCUITS Supersedes data of 2001 Aug 03 2003 Feb 14 DESCRIPTION The Quad Timers are monolithic timing devices which can be used to produce four independent timing functions. The output sinks

More information

AP1506. 150KHz, 3A PWM BUCK DC/DC CONVERTER. Pin Assignments. Description. Features. Applications. ( Top View ) 5 SD 4 FB 3 Gnd 2 Output 1 V IN

AP1506. 150KHz, 3A PWM BUCK DC/DC CONVERTER. Pin Assignments. Description. Features. Applications. ( Top View ) 5 SD 4 FB 3 Gnd 2 Output 1 V IN Description Pin Assignments The series are monolithic IC designed for a stepdown DC/DC converter, and own the ability of driving a 3A load without external transistor. Due to reducing the number of external

More information

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C 2N6284 (NPN); 2N6286, Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general purpose amplifier and low frequency switching applications. Features High

More information

Application Examples

Application Examples ISHAY SEMICONDUCTORS www.vishay.com Optocouplers and Solid-State Relays Application Note 2 INTRODUCTION Optocouplers are used to isolate signals for protection and safety between a safe and a potentially

More information

FL3100T Low-Side Gate Driver with PWM Dimming Control for Smart LED Lighting

FL3100T Low-Side Gate Driver with PWM Dimming Control for Smart LED Lighting August 2015 FL3100T Low-Side Gate Driver with LED PWM Dimming Control for Smart LED Lighting Features Non-inverting Input Logic with DIM Control Input for PWM Dimming Down to 0.1% for Hybrid Dimming 4.5

More information

45 V, 100 ma NPN/PNP general-purpose transistor

45 V, 100 ma NPN/PNP general-purpose transistor Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

More information

65 V, 100 ma PNP/PNP general-purpose transistor

65 V, 100 ma PNP/PNP general-purpose transistor Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

More information

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 6 Vdc Emitter

More information

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET FQP8N80C/FQPF8N80C/FQPF8N80CYTU 800V N-Channel MOFET General escription These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, MO technology.

More information

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Package is Available* COLLECTOR 1 2 BASE MAXIMUM RATINGS Collector-Emitter oltage Collector-Base oltage Rating Symbol alue Unit CEO 65

More information

1 Form A Solid State Relay

1 Form A Solid State Relay 1 Form A Solid State Relay Vishay Semiconductors DIP i1791- SMD DESCRIPTION Vishay solid state relays (SSRs) are miniature, optically coupled relays with high-voltage MOSFET outputs. The LH1518 relays

More information

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors TIP140, TIP141, TIP142, (); TIP145, TIP146, TIP147, () Darlington Complementary Silicon Power Transistors Designed for generalpurpose amplifier and low frequency switching applications. Features High DC

More information

2.5 A Output Current IGBT and MOSFET Driver

2.5 A Output Current IGBT and MOSFET Driver VO. A Output Current IGBT and MOSFET Driver 9 DESCRIPTION NC A C NC _ The VO consists of a LED optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for

More information

2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS

2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS NPN Darlington Silicon Power Transistor The NPN Darlington silicon power transistor is designed for general purpose amplifier and low frequency switching applications. High DC Current Gain h FE = 3000

More information

P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com

P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com Amplifier Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Characteristic Symbol Value Unit CollectorEmitter Voltage V CEO 4 CollectorBase

More information

Features. Applications

Features. Applications LM555 Timer General Description The LM555 is a highly stable device for generating accurate time delays or oscillation. Additional terminals are provided for triggering or resetting if desired. In the

More information

Tube Liquid Sensor OPB350 / OCB350 Series

Tube Liquid Sensor OPB350 / OCB350 Series Features: Can identify if liquid is present in clear tubes that have an outside diameter of 1/16 [1.6mm], 1/8" [3.2mm], 3/16" [4.8 mm] or 1/4" [6.3 mm] Opaque plastic housing enhances ambient light rejection

More information

1 Form A Solid State Relay

1 Form A Solid State Relay Form A Solid State Relay VOAT, VOAABTR FEATURES 9 S S DC S' 3 S' High speed SSR - t on /t off < 8 μs Maximum R ON. Isolation test voltage 3 V RMS Load voltage V Load current A DC configuration DIP- package

More information

PAM2804. Pin Assignments. Description. Applications. Features. Typical Applications Circuit 1A STEP-DOWN CONSTANT CURRENT, HIGH EFFICIENCY LED DRIVER

PAM2804. Pin Assignments. Description. Applications. Features. Typical Applications Circuit 1A STEP-DOWN CONSTANT CURRENT, HIGH EFFICIENCY LED DRIVER 1A STEP-DOWN CONSTANT CURRENT, HIGH EFFICIENCY LED DRIER Description Pin Assignments The is a step-down constant current LED driver. When the input voltage is down to lower than LED forward voltage, then

More information

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Package May be Available. The GSuffix Denotes a PbFree Lead Finish MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter

More information

Silicon NPN Phototransistor

Silicon NPN Phototransistor Silicon NPN Phototransistor 16758-1 VEMT252X1 DESCRIPTION VEMT25X1 VEMT25X1 series are silicon NPN epitaxial planar phototransistors in a miniature dome lens, clear epoxy package for surface mounting.

More information

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO 65 45

More information

INTEGRATED CIRCUITS DATA SHEET. TDA7000 FM radio circuit. Product specification File under Integrated Circuits, IC01

INTEGRATED CIRCUITS DATA SHEET. TDA7000 FM radio circuit. Product specification File under Integrated Circuits, IC01 INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC01 May 1992 GENERAL DESCRIPTION The is a monolithic integrated circuit for mono FM portable radios, where a minimum on peripheral components

More information