RClamp3304NA RailClamp 3.3V TVS Arrays

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1 - RailClamp Description RailClamp low capacitance TVS array is designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE (Cable Discharge Events), and Lightning. The unique design incorporates surge rated, low capacitance steering diodes and a TVS diode in a single package. During transient conditions, the steering diodes direct the transient current to ground. The internal TVS diode clamps the transient voltage to a safe level. The low capacitance array configuration allows the user to protect up to four high-speed data lines. The RClamp NA is constructed using Semtech s proprietary EPD process technology. The EPD process provides low stand-off voltages with significant reductions in leakage current and capacitance over siliconavalanche diode processes. The features a true operating voltage of. volts for superior protection. This device is in a -pin SLP2626P package. It measures 2.6 x 2.6 x.6. The leads are spaced at a pitch of. and are finished with lead-free NiPdAu. The high surge capability (Ipp=2A, tp=/ 2μs) means it can be used in high threat environments in applications such as Gigabit Ethernet, telecounication lines, and digital video. Circuit Diagram RailClamp.V TVS Arrays Features Transient protection for high-speed data lines to IEC 6--2 (ESD) 2kV (air), kv (contact) IEC 6-- (EFT) A (/ns) IEC 6-- (Lightning) 2A (/2μs) Array of surge rated diodes with internal TVS Diode Small package saves board space Protects up to four I/O lines Low capacitance (<pf) for high-speed interfaces Low leakage current and clamping voltage Low operating voltage:.v Solid-state silicon-avalanche technology Mechanical Characteristics SLP2626P L package Pb-Free, Halogen Free, RoHS/WEEE Compliant Nominal Dimensions: 2.6 x 2.6 x.6 Lead Finish: NiPdAu Molding compound flaability rating: UL 9V- Marking : Marking Code + Date Code Packaging : Tape and Reel Applications // Ethernet RJ- Connectors T/E Secondary Protection T/E Secondary Protection Analog Video Package Configuration Pin C L C L 2.6 Pin Pin 9 Pin Pin 7. BSC Gnd.6 Revision 7/27/2

2 Absolute Maximum Rating Rating Symbol Value Units Peak Peak Pulse Power (tp = /2μs) Pulse Current (tp = /2μs) P pk Watts I PP 2 A ESD per IEC 6--2 (Air) ESD per IEC 6--2 (Contact) V ESD 2 kv Operating Temperature T J - to +2 C Storage Temperature T STG to + - C Electrical Characteristics (T=2 o C) Parameter Symbol Conditions Minimum Typical Maximum Units Reverse Stand-Off V WM R. V Punch-Through Snap-Back V PT V SB I PT I SB = μa. V = ma 2. V Reverse Leakage Current I R V RWM =.V, T=2 C. μa Clamping V C I PP = A, t = /2μs p. V Clamping V C I PP = A, t = /2μs p. V Clamping V C I PP = 2A, t = /2μs p V Junction Capacitance C j Between I/O pins and Ground = V, f = MHz V R Between I/O pins = V, f = MHz V R. pf 2. pf Note : I/O pins are pin,, 7, and 9 2 Semtech Corp. 2

3 Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve Peak Pulse Power - P PP (kw)... Pulse Duration - tp (us) % of Rated Power or IPP Ambient Temperature - T A ( o C) Percent of I PP Pulse Waveform e -t td = I PP /2 Waveform Parameters: tr = µs td = 2µs 2 2 Time (µs) C J (V R ) / C J (V R =) Normalized Junction Capacitance vs. Reverse f = MHz Reverse - V R (V) Clamping vs. Peak Pulse Current I/O to GND Clamping vs. Peak Pulse Current I/O to I/O 2 7 Clamping - V C (V) Waveform Parameters: tr = μs td = 2μs Forward - V F V) 6 2 Waveform Parameters: tr = μs td = 2μs 2 2 Peak Pulse Current - I PP (A) 2 2 Forward Current - I F (A) 2 Semtech Corp.

4 Typical Characteristics Insertion Loss S2 (I/O to Ground) ESD Clamping (kv Contact per IEC 6--2) CH S2 LOG 6 db / REF db : -.2 db MHz db 2: -. db 9 MHz -6 db 2 : db. GHz -2 db - db -2 db : db 2. GHz : -. db 2.7 GHz - db -6 db -2 db - db MHz MHz MHz GHz GHz START. MHz STOP. MHz Note: Data is taken with a x attenuator 2 Semtech Corp.

5 Applications Information Device Connection Options for Protection of Four High-Speed Data Lines These devices are designed to protect low voltage data lines operating at. volts. When the voltage on the protected line exceeds the reference voltage the steering diodes are forward biased, conducting the transient current away from the sensitive circuitry. Data lines are connected at pins,, 7 and 9. The center pin should be connected directly to a ground plane. The path length is kept as short as possible to minimize parasitic inductance. Pins 2,, 6,, and are not connected. Pin Circuit Diagram Pin Pin 9 Pin Pin 7 Gnd Note that pin is connected internally to the cathode of the low voltage TVS. It is not recoended that these pins be directly connected to a DC source greater than the snap-back voltage (V SB ) as the device can latch on as described below. EPD TVS Characteristics These devices are constructed using Semtech s proprietary EPD technology. By utilizing the EPD technology, the can effectively operate at.v while maintaining excellent electrical characteristics. The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. Since the EPD TVS devices use a -layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices. During normal operation, the device represents a high-impedance to the circuit up to the device working voltage (V RWM ). During an ESD event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (V PT ) is exceeded. Unlike a conventional device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device, but must be considered in applications where DC voltages are present. When the TVS is conducting current, it will exhibit a slight snap-back or negative resistance characteristics due to its structure. This point is defined on the curve by the snap-back voltage (V SB ) Pin Pin Configuration (Top Side View) 2 GND Identification,, 7, 9 Input/Output Lines 2,, 6,, No Connect Center Tab No Connect (Do not connect this pin to a DC supply) Ground and snap-back current (I SB ). To return to a nonconducting state, the current through the device must fall below the I SB (approximately <ma) and the voltage must fall below the V SB (normally 2. volts for a.v device). If a.v TVS is connected to.v DC source, it will never fall below the snap-back voltage of 2.V and will therefore stay in a conducting state. 2 Semtech Corp.

6 Applications Information 2 Gigabit Ethernet Transceiver Schematic Diagram for Gigabit Ethernet Telcordia GR-9 Intra-Building Protection Schematic Diagram for Gigabit Ethernet ESD Protection 2 Semtech Corp. 6

7 Outline Drawing - SLP2626P PIN INDICATOR (LASER MARK) aaa C A A2 D D B E A A SEATING PLANE C DIMENSIONS INCHES MILLIMETERS DIM MIN NOM MAX MIN NOM MAX A A A2 (.7) (.7) b D D E E e.2 BSC. BSC L N aaa.. bbb.. 2 C L E/2 C L E e N D/2 LxN bxn bbb C A B NOTES:. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. Land Pattern - SLP2626P P X Z G Y F (C) DIMENSIONS DIM B INCHES. MILLIMETERS 2. C. 2. F..26 G.7. P.2. X Y Z.2. B NOTES:. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 2 Semtech Corp. 7

8 Marking Ordering Information NA YYWW Part Number TCT Working Qty per Reel Reel Size. Volts, 7 Inch RailClamp and RClamp are trademarks of Semtech Corporation YYWW = Date Code Tape and Reel Specification Pin Location User Direction of feed Device Orientation in Tape A B K / /-.. +/-. Tape Width B, (Max) D D E F K (MAX) P P P 2 T(MAX) W.2 (.6) ±..7±..±. 2..±..±. 2.± Contact Information Semtech Corporation Protection Products Division 2 Flynn Rd., Camarillo, CA 92 Phone: ()9-2 FAX ()9-2 Semtech Corp.

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