Solid-State-Transformers: Key Components of Future Traction and Smart Grid Systems

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1 2014 IEEE Proceedigs of the Iteratioal Power Electroics Coferece - ECCE Asia (IPEC 2014), Hiroshima, Japa, May 18-21, Solid-State-Trasformers: Key Compoets of Future Tractio ad Smart Grid Systems J. W. Kolar G. Ortiz This material is posted here with permissio of the IEEE. Such permissio of the IEEE does ot i ay way imply IEEE edorsemet of ay of ETH Zurich s products or services. Iteral or persoal use of this material is permitted. However, permissio to reprit/republish this material for advertisig or promotioal purposes or for creatig ew collective works for resale or redistributio must be obtaied from the IEEE by writig to pubs-permissios@ieee.org. By choosig to view this documet, you agree to all provisios of the copyright laws protectig it.

2 Solid-State-Trasformers: Key Compoets of Future Tractio ad Smart Grid Systems Joha W. Kolar, Gabriel Ortiz Power Electroic Systems Laboratory, ETH Zurich, Switzerlad Eertroics GmbH, Switzerlad Abstract The efficiet supply of electric power relies strogly o the selectio of suitable voltage levels for differet sectios of the eergy distributio system. Whe higher levels of power are required, a medium-voltage level i the tes of kilovolts rage is typically selected. I accordace to curret treds i eergy coversio, the supply of power must fulfil several fuctioality requiremets amog which high power-quality ad access to a low-voltage iterface ca be highlighted. Moreover, low eergy losses, high power-desity, low failure rate ad low total cost of owership remai as major research challeges. Solid-state-trasformers (SSTs) comply with these fuctioality requiremets as well as with the demaded high performace levels while directly coectig to medium-voltage. This paper reviews the implemetatio of SST techology for trasportatio ad Smart-Grid applicatios. The evisioed architectures for locomotive systems, remotely-operated-vehicles ad large scale ships, which beefit from the compactess ad high performace of SST are show. I additio, the possible arragemet of micro-grid systems comprisig SST cocepts for itegratio of reewable eergy ad implemetatio of microgrids is detailed. The differet SST cocepts proposed for these applicatios ca be grouped ito distictive categories, leadig to a comprehesive classificatio of, first, geeral isolated - coversio systems ad later to a specific classificatio of SST cocepts based o the differet levels of modularity. Fially, a detailed review of the umerous previously reported ad fuctioal SST cocepts is preseted ad a compariso to systems employig low-frequecy trasformers is give. Keywords Coverter Topology Classificatio, Multicell ad Multilevel Coverter Topologis, Medium-Frequecy Isolatio, Performace Evaluatio. I. INTRODUCTION The existig electric power supply etwork is characterized by differet voltage levels, e.g. a Medium-Voltage (MV) level, ragig from 7.2 kv up to 24 kv for larger distace power distributio while a Low-Voltage (LV) level, ragig from 127 V up to 690 V is selected for the fial supply of the loads [1]. The adaptatio ad isolatio betwee the differet etwork sectios is realized by passive trasformers operated at lie frequecy (50 Hz/60 Hz), whereby i case of highpower applicatios, these trasformers are coveietly placed i close viciity to the load i order to miimize the losses i the eergy trasmissio. O the other had, curret treds i electric eergy supply, as show i Fig. 1, demad cocepts featurig high multi-objective performace levels. Amog these performace Missio / Supply Chai Eergy Loss Total Cost of Owership Maufacturig & Recyclig Effort State-of-the-Art Failure Rate Future Floorspace Requiremet Figure 1: Performace treds i supply of electric eergy. idexes, low supply chai ad missio eergy losses, low floorspace requiremet ad low total cost of owership costitute a critical triad give the trade-offs preset i their selectio [2]. Moreover, with the cotiuous itegratio of power electroic circuits performig critical eergy coversio tasks, low failure rate, i.e. high reliability, is becomig a major cocer, whereby the cocept of fault-tolerat systems has gaied icreased attetio [3, 4]. A fial moder specificatio is the requiremet of low maufacturig ad recyclig efforts of the eergy supply system. I additio, these power electroic circuits should provide uprecedeted fuctioality features such as: available LV -lik power-factor correctio VAr compesatio active filterig disturbace isolatio smart protectio. Amog these ew required features, the access to a LV lik, i order to e.g. ease the itegratio of reewable eergy sources [1, 5], or other power-quality related features such as power-factor-correctio, reactive-power compesatio ad active filterig are of primary cocer [6, 7]. Other cosidered features i supply of eergy are related to smart protectio approaches able to effectively isolate load ad grid side trasiets, icludig load short circuit coditios ad ubalaced iput voltages, amog others, hece icreasig the power quality of the system. These ewly demaded performace ad fuctioality features are ot fully covered by the stadard electric power supply cocept, which is based o passive Low Frequecy Trasformers (LFT). The first step towards accomplishig these striget performace requiremets is the itegratio of power-electroic

3 MV- LV- LV- e.g. space-limited ad/or high-efficiecy applicatios. I these cases, a advaced cocept as show i Fig. 2-c) is required. This cocept eables equal fuctioality features as the arragemet i Fig. 2-, while icorporatig a - coversio stage resposible for the galvaic isolatio ad voltage adaptatio. This - coverter stage is operated i the Medium-Frequecy (MF) rage, thus achievig a cosiderable reductio i the size of reactive compoets [9, 10], amely the ow MF-operated trasformer. Furthermore, the operatio at MF facilitates the optimizatio of the system for a set of specific performace idexes [2, 11], makig it suitable for applicatios with high performace requiremets. Give the iclusio of a high umber of semicoductor devices, this ew advaced cocept is ofte referred to as Solid-State- Trasformer (SST). Galvaic Isolatio LV- c) This paper presets a overview of SST techology with special focus o applicatios i trasportatio ad the Smart- Grid. First, i Sectio II the evisioed architectures icludig the SST cocept i tractio ad Smart-Grid techologies will be reviewed. I Sectio III a overview of previously reported SST cocepts ad their respective classificatio cocerig differet modularizatio criteria is described. I Sectio IV a summary of fuctioal research ad idustrial prototypes reported i literature is preseted. Fially, a outlook ad future research questios related to the SST cocept will be outlied i Sectio V. Figure 2: Coversio of electric eergy from MV- to LV- through stadard lie frequecy operated passive trasformer; icorporatio of a back-to-back rectifier/iverter stage ad c) itegratio of a medium-frequecy isolated - coversio stage, boostig performace idexes such as power-desity ad efficiecy. circuits i the supply chai i order provide active cotrol of the power flow. A circuit structure fulfillig all previously metioed fuctioality features is show i Fig. 2-, where a back-to-back rectifier-iverter stage with access to the LV lik is preseted. I cotrast to the stadard solutio show i Fig. 2-, this cocept, whe equipped with a proper rectifier topology, eables the active ad cotiuous shapig of the iput (MV-) curret, thus fulfillig the requiremets of power-factor correctio, reactive power compesatio, active filterig ad disturbace isolatio. O the load (LV-) side, a regulated output voltage is supplied, whose frequecy is idepedet from the MV-side s frequecy. Moreover, give the cotrolled ature of power electroic switchig devices, a smart protectio cocept ca be elaborated. Most importatly, with the availability of a LV- port, umerous features ca be added to this supply chai, icludig coectio to a eergy storage system, thus eablig operatio as a Uiterrupted-Power-Supply (UPS), direct coectio of Photo-Voltaic (PV) arrays [8] or implemetatio of future local -grids [5], amog others 1. Nevertheless, the structure show i Fig. 2- suffers from low flexibility i the optimizatio of performace idexes such as efficiecy (missio eergy loss) ad power desity (floorspace requiremets), which do ot fulfil the eeds of 1 The structure i Fig. 2- ca be modified i order to partially fulfil the metioed fuctioalities, which result i simplified structures. Some of these will be discussed i a later sectio. II. SOLID-STATE-TRANSFORMER CONCEPT As metioed earlier, the SST cocept offers importat beefits whe applied to tractio ad Smart-Grid applicatios due to the high levels of available fuctioality ad the potetial to improve efficiecy ad power desity whe compared to stadard MV- to LV- coversio architectures. For these reasos, the specific arragemet of power electroic coversio stages withi these applicatios will be reviewed i the ext sectios. A. SSTs i Tractio Applicatios Tractio ad subsea systems are clear examples of spacecritical applicatios, where a low volume ad weight of the systems directly boosts its performace. Tractio coverter maufacturers are icorporatig this techology ito their product lies [12 18], whereby the mai cosidered architecture is show i Fig. 3-. The arragemet cosists o a iput rectifier coected directly to the MV cateary lie whose voltage resides betwee 15 ad 25 kv [19]. The rectified voltage supplies a high-power - coverter stage which is ow resposible for the voltage adaptatio ad the isolatio of the primary to secodary side. This - coverter provides a low voltage -lik supplyig the 3-phase iverters drivig the locomotive s tractio motors as well as supplyig all relevat auxiliary loads. With the iclusio of a MF trasformer withi the - coverter, the size/weight of the tractio solutio ca be greatly reduced while icreasig the system s efficiecy [20]. Aother space-limited applicatio which beefits from SST techology are Remotely-Operated-Vehicles (ROVs) [21]. Typically the supply of these vehicles is through a log cable powered from the topside ship s electric system. Give

4 M 3Á MV Geerators MV Cateary lie M 3Á Topside Subsea M 3Á M 3Á Rectifier - Iverter Motor Rectifier Log MV cable Geerator Egie - Geerator Iverter Propulsio & Actuators MV- Bus - LV- Bus M 3Á Propulsio Actuator Battery Figure 3: SST techology i space-limited applicatios: Tractio locomotive with direct 1-phase MV coectio; Remotely- Operated-Vehicle supplied through log MV- cable; c) powered ship architecture. c) its highly capacitive behavior, however, this results i high amouts of reactive power supplied to the cable, ad thus i cosiderable coductio losses. I order to avoid this problem, a topside rectifier supplies a - coverter, istalled withi the ROV, through a log MV- cable as show i Fig. 3-. This - coverter dow-steps the voltage i order to be utilized by the o-board propulsio ad actuator systems. Here, the trasmissio through a log MV- cable icreases the overall system s efficiecy. A further applicatio where SST techology could provide sigificat beefits is i large ships, whereby the utilizatio of MV- etworks is gaiig cosiderable attetio [22 24]. The proposed architecture is show i Fig. 3-c). Here, a powerelectroic rectifier, placed i close viciity to the geerator egie, supplies a MV- bus. A large portio of the power is fed directly from this MV- bus to the iverter drivig the propulsio motors. A - coverter is resposible for providig a LV- bus utilized for all other electrical loads. I additio, a eergy storage system may be liked to this LV- bus i order to provide electrical eergy i case of a geerator failure. B. SSTs i Smart-Grid Applicatios SSTs are cosidered to be oe of the key eablig techologies for the implemetatio of the future electric power system architecture: the Smart-Grid [1, 25, 26]. This cocept cosists o a efficiet distributio of electric eergy which is based o flexible routig mechaisms ad comprehesive iformatio about the ed-user s eergy cosumptio, which ultimately facilitates the coordiatio ad itegratio of reewable eergy sources ad eergy storage systems ito the curret electrificatio etwork. A possible implemetatio of this cocept is clearly visualized i local microgrids [5], battery chargig facilities, ad data ceters [27], where possible implemetatios utilizig stadard ad SST techologies are preseted i Figs. 4- ad respectively. I both cases, a set of differet ( ad ) loads, battery stacks ad reewable eergy sources are itercoected withi the local grid. With this arragemet, a flexible flow of electric power is achieved, effectively itegratig reewable eergy sources ad powerig loads of ad ature. With the covetioal arragemet show i Fig. 4- however, all aforemetioed power quality issues, such as reactive power compesatio, active filterig ad grid-side/loadside protectios are ot easily achievable sice these tasks would be distributed amog several power electroic coverter systems, which require to be precisely coordiated. Therefore, the solutio preseted i Fig. 4-, which icorporates a cetral rectificatio stage ad a - coverter, represets a attractive solutio. Here, the distributio of electrical eergy is o loger doe i LV-, but i the shape of LV-. With respect to the stadard solutio, the fial coversio supplyig the loads is ow realized from LV- ito or other lower voltage values. Moreover by utilizig a MF-operated - coverter, the efficiecy ad power desity of the solutio ca be icreased [11]. So far, oly the geeral cofiguratio of the coverters show i Figs. 3 ad 4- has bee preseted. I order to

5 MV- Iput Low Freq. Trasformer MV- Iput Rectifier MV--lik LV- Bus LV- Bus - Stage M 3Á M 3Á Motor load Battery PV Array Load Motor load Battery PV Array Load Figure 4: Microgrid structures itegratig ad loads as well as eergy storage systems liked to reewable eergy sources. I a implemetatio based o stadard low-frequecy techology is preseted, whereas displays the SST-based solutio. discuss the possible architectures of the SST, a classificatio cocerig the differet potetial features of geeral 3-phase - coversio systems will be extesively covered i the ext sectio, which should ultimately aid i the selectio of the most suitable topology for a specific applicatio. ( t) S 11 S 21 u 2 ( t) III. SOLID-STATE-TRANSFORMER: STATE-OF-THE-ART The first form of - power electroic circuit with galvaic isolatio ad power flow cotrol, preseted i Fig. 5, was proposed i the early seveties by W. McMurray [28] ad it may be cosidered as the first coceived SST. This circuit cosists of two four-quadrat switches o the primary side coected to a 1-phase grid while feedig the primary ceter-tapped higher-frequecy trasformer widig. O the secodary side, a similar structure comprisig the required iductor ad output capacitor is icluded. The switches S 11 ad S 12 operate i complemetary mode with 50% dutycycle, same as with the secodary switches S 21 ad S 22. By adjustig the phase-shift betwee these two pairs of switches, the output voltage ca be regulated while achievig siusoidal iput curret [28]. It should be oted that the operatio of this coverter resembles i great maer that of the moder Dual-Active-Bridge - coverter, reported origially i the ieties [29]. Numerous isolated 3-phase - coverter systems have emerged sice the coceptio of the first SST cocept, icludig low-frequecy frot-ed isolated ad high-frequecy isolatio cocepts. A comprehesive classificatio of these coverter systems is preseted i Fig. 6. I order to select the most suitable solutio for a specific applicatio, the optios for the costructio of the isolated 3-phase - coversio systems are detailed ad a comprehesive classificatio of these optios is give. The first S 12 Figure 5: First reported SST cocept [28] based o four quadrat switches able to cotrol output voltage ad/or iput curret amplitude while providig galvaic isolatio. coceptual differetiatio is made whe selectig the operatig frequecy of the trasformer, where the frot-ed lowfrequecy ad high-frequecy isolatio are foud. O the low frequecy isolatio side, a divisio betwee systems with ad without capability of secodary side frequecy adjustmet is foud. The first of these type of coverters is the chopper, which is able to regulate output voltage without idepedet selectio of frequecy [30 32]. The electroic tap chager, as the ame poits out, is based o a tapped trasformer where the switchig betwee differet taps is doe with electroic circuitry [33]. With this cocept, the output voltage ca be actively regulated therefore compesatig for disturbaces from the primary side. The last cocept i this category is the series voltage compesator [33, 34]. This circuit is able to cotrol the output voltage withi a certai rage depedig o the amout of power the respective coverter system is desiged for. Other cocepts which are able to cotrol the output frequecy while implemetig a frot-ed low-frequecy trasformer ca be categorized i matrix type ad -lik based coverters. Advaced cocepts for isolated 3-phase - coverter S 22

6 Isolated 3ph - Cov.Systems Frot-ed Low Frequecy Isolatio High Frequecy Isolatio f = f f = f * f = f f = f * Chopper Electroic Tap Chager Series Voltage Compesator Matrix Coverter -lik Coverter Fud. Freq. Frot&Back Ed Matrix Cov. Frot-ed Trasformer Itegrated Trasformer Matrix-type Output Stage -lik-based Output Stage Full Matrix Coverter Hybrid Matrix -lik Cov Full -lik Type Cov. Figure 6: Classificatio of 3-phase - coversio system (f 2 deotes a output frequecy, which ca be selected idepedet of the iput frequecy f 1). systems comprisig high-frequecy isolatio priciple, i.e. SSTs cocepts, ca be also subdivided ito output frequecycotrollable ad o-cotrollable cocepts. Systems uable to cotrol the output frequecy ca be foud i the shape of fudametal frequecy frot ad back ed matrix-based coverters. Withi the output frequecy-cotrollable cocepts, the trasformer ca also be placed at the frot ed while still beig operated at higher frequecies, as is the case i [35, 36], which icorporates a matrix-type output stage. Alteratively, the trasformer ca be itegrated i the eergy supply chai, leadig to the last category of isolated - 3-phase coversio systems. Here, the mai categorizatio cosist of the modularity level i the directio of the power flow. The o-modular structure cosists of a sigle-stage cocept, where the voltage from the 3-phase grid is directly trasformed ito high-frequecy by a direct matrix-type structure o both sides of the medium frequecy trasformer. Several realizatios based o this cocept ca be foud i literature [37 40]. Other cocepts are comprisig matrix-type structures o oe side of the medium-frequecy trasformer while utilizig a -lik based arragemet o the LV-side, leadig to hybrid structures [41]. The full-modular arragemet cocerig the directio of the power is represeted by the MV- ad LV-side -lik-based structures, where the power flow is processed i three stages: - rectificatio, - coversio ad fially - iversio [25, 42] This last group, deomiated as itegrated trasformer type, has gaied itese attetio due to its potetial beefits i efficiecy ad power desity, as described earlier, leadig to a vast umber of proposed coverter uits. I order to classify these proposed systems, a idetificatio of the level of modularity is required i three differet axes: 1) i the power flow directio; 2) cocerig the coectio to the 3-phase systems ad 3) cocerig the coectio to the MV level, which is also beeficial for characterizig the complexity of the coverter system. This classificatio regardig modularity level is described i the followig. 1) Modularizatio i Power Flow Directio: All differet optios for modularizatio i the power directio are preseted i Fig. 7 ad they comprise all combiatios startig from direct 3-phase matrix coversio, idirect matrix coversio ad -lik-based coverters. These type of coversio systems ca be either o the LV- or o the MV-side of the SST, completig a total of ie optios. The circuit diagrams of four of these cocepts are preseted i Fig. 8. I Fig. 8-, the schematic represetatio of a siglestage direct-matrix type coverter is show. This cocept utilizes six four-quadrat switches o the MV- ad the LVside. Sice each of these switches comprises two IGBTs, a total of 24 devices is ecessary i order to build this siglestage approach, which has bee proposed i literature [37 40]. The first step i modularizatio is represeted by the exchage of the direct matrix coverter for a idirect type, as show i Fig. 8-. Here, similar fuctioality as with the direct matrix type structure ca be achieved while utilizig two semicoductor devices less. Additioally, the two-level 3-phase iverter is operated as a sychroous rectifier, thus geeratig virtually o switchig losses. Addig a -lik o oe of the coverter s sides represets the ext step i modularizatio i the directio of the power flow. The versio with MV-side direct matrix-type coverter ad LV -lik based arragemet is show i Fig. 8-c). This structure requires the same amout of semicoductor devices as the idirect matrix-type structure, with the additio of a -lik capacitor o the LV-side. This capacitor effectively achieves a decouplig of the low-frequecy side from the high-frequecy side, which is beeficial for the desig ad optimizatio of the complete coverter system. The fial step i modularizatio of the SST i the power flow directio is a fully modular 3-stage approach, where idepedet rectificatio, - coversio ad iversio stages are utilized as show i Fig. 8-d). This solutio utilizes a total of 20 semicoductor devices, four less tha the siglestage direct matrix-type system. Additioally, this approach allows the optimizatio of each coverter stage i a idividual maer, thus esurig that a optimized/applicatiospecific desig is achieved. Moreover, the major challege i the costructio of this type of coverter structure is ow limited to the - coversio stage, where the operatio at higher-frequecies combied with the medium-voltage level represets a major research challege. I the previous examples, the 3-phase grid is iterfaced with a 3-phase itegrated coverter, either of matrix or of -

7 c) d) e) c) f) Figure 7: Possible full-scale 3-phase to 3-phase SST cocepts: MV-side direct matrix coverter / LV-side direct matrix coverter; MV-side direct matrix coverter / LV-side idirect matrix coverter; c) MV-side direct matrix cov. / LV-side -lik back-to-back cov.; d) MV-side idirect matrix coverter / LV-side direct matrix coverter; e) MV-side idirect matrix cov. / LV-side idirect matrix coverter; f) MV-side idir. matrix cov. / LV-side -lik back-to-back cov.; g) MV-side -lik back-to-back cov. / LV-side direct matrix cov.; h) MV-side -lik back-to-back cov. / LV-side idir. matrix cov.; i) MV-side -lik back-to-back cov. / LV-side -lik back-toback coverter. g) h) i) Figure 8: Possible full matrix-type SST cocepts: MV-side direct matrix coverter / LV-side direct matrix coverter; MV-side direct matrix coverter / LV-side idirect matrix coverter; c) MV-side direct matrix coverter / LV-side -lik back-to-back cov.; d) MV-side -lik back-to-back cov. / LV-side -lik back-to-back coverter. lik type. This solutio, however, ca be modified i order to, for example, utilize a idepedet coverter for each of the phases, thus achievig a phase-modular structure i terms of the coectio to the 3-phase grid, which is covered i the ext sectio. 2) Modularizatio of Coectio to the 3-phase System: Aother axis of modularizatio potetial is represeted by the differet strategies to coect to the 3-phase system, which could be either o the grid or o the trasformer side. The differet optios for modularizatio i this axis are preseted i Fig. 9 whereby, i order to simplify the classificatio, oly direct matrix-coverter systems are cosidered, i.e. o modularizatio i the power flow directio. The lowest modularizatio level is represeted by a solutio which fully itegrates the MV- ad LV-side 3-phase system while the high-frequecy lik is doe with a 1-phase trasformer, as show i Fig. 9-. This isolatio trasformer ca be also built as a 3-phase system, whereby the respective d)

8 Figure 9: Direct matrix-type 3-phase SST topologies showig differet degrees of phase-modularity; Three-phase itegrated MV- ad LV-side low-frequecy iterfaces ad 1-phase MV- ad LV-side highfrequecy trasformer; as but 3-phase magetically itegrated high-frequecy trasformer; c) as but idepedet magetic circuits (cores) of the 3-phase trasformer; d) as c) but phase-modular MVside LF iterface; e) as d) but idividual 1-phase trasformers coected to the MV-side phase modules ad series coectio of the trasformer secodary widigs formig a 1-phase output coected to a LV-side coverter stage as show for ; f) as e) but 3- phase output of the phase modules ad magetically fully itegrated trasformer arragemet with three-sets of 3-phase MV widigs ad a sigle 3-phase LV widig; g) Phase-modular MV- ad LV-side coverter iterfaces with coverter phase modules coected through idividual 3-phase trasformers; h) as g) but 1-phase istead of 3- phase trasformers. c) d) e) f) g) h) magetic circuit ca be either itegrated, i.e. a sigle multilimb magetic core would be employed (cf. Fig. 9-) or it ca comprise idepedet magetic circuits as show i Fig. 9-c). The first step of the modularizatio o the low-frequecy sides (iput ad output side) is show i Fig. 9-d), whereby the MV-side coverter has bee split ito three idepedet 1- phase coverters each of them coected to oe of the phases of the 3-phase etwork. Each of these coverters feeds a widig of a magetically idepedet 3-phase trasformer. A special case is foud whe the LV-side widigs of the trasformer i Fig. 9-d) are coected i series, leadig to a 1-phase trasformer see from the LV-side as show i Fig. 9- e). The solutios preseted so far utilize a sigle 3-phase trasformer arragemet, where the magetic circuits are either itegrated or idepedet. The ext step is to costruct idepedet trasformers fed by idepedet coverter modules. The solutio i Fig. 9-e) ca be exteded with idepedet 3-phase widigs o the MV-side magetically coupled to a sigle 3-phase widig o the LV-side, as show i Fig. 9- f). The fully modular structures, i.e. low-frequecy MV ad LV phase-modular ad idepedet trasformers, are show i Figs. 9-g) ad h) for the 3-phase ad 1-phase trasformer solutios respectively. These last levels of high modularity result beeficial i high power solutios, as each compoet ca be idepedetly desiged to meet specific requiremets. Two examples of the aforemetioed phase-modular solutios are preseted i Figs. 10- ad, for the fully 3- phase itegrated coverter solutio from Fig. 9-c) ad the MVside modular 3-phase magetically itegrated solutio from Fig. 9-f). The fully itegrated solutio comprises bidirectioal switches which coect directly the MV ad LV low-frequecy sides to the high-frequecy trasformer, realizig the coversio of eergy i a sigle stage. This solutio however, requires the implemetatio of four-quadrat switches, thus requirig a high umber of semicoductor devices. The solutio i Fig. 10- icorporates a MV-side modular magetically itegrated 3-phase trasformer, whereby the LV-side coverter comprises two-level 3-phase itegrated bridges o both high ad low-frequecy sides. The meas to split the coverter ito phase power coversio stages ad the differet cocepts utilized to coect to 3-phase systems o the high ad low frequecy sides have bee clarified. It is ow ecessary to study the possibilities available to deal with the medium-voltage level. The desire to operate at higher frequecies while still reachig high efficiecy values presets a key challege withi the realizatio of SSTs. The differet optios available to deal with this MV level will be covered i the ext sectio as a fial axis of the differet modularizatio directios. 3) Modularizatio i the Coectio to the MV Level: The last step i modularizatio of the SST is required i order to deal with the voltage levels ecoutered i this applicatios, which typically reach up to the tes of kilovolts. The curret semicoductor techology does ot provide sigle devices desiged for these voltage levels. For this reaso, advaced coverter structures able to block these high voltages while operatig at higher frequecies ad reachig high efficiecy levels become madatory.

9 i 2 u 2 i 2 u 2 i 2 u 2 c) i 2 u 2 Figure 10: Direct matrix-type, 3-phase itegrated MV- ad LV-side LF iterfaces ad 3-phase high-frequecy trasformer with idividual magetic cores of the phases (cf. Fig. 9-c); Phase-modular MVside ad 3-phase itegrated LV-side low-frequecy iterface ad MVside phase-modular 3-phase magetically itegrated high-frequecy trasformer (cf. Fig. 9-f). i 2 d) i 2 Fig. 11 preset the mai optios for modularizatio i the voltage directio. It should be oted that this modularizatio ca be performed either o the or side of the coverter i case a multi-stage solutio is implemeted. The first optio, i Fig. 11- is a fully itegrated solutio, which comprises power semicoductor bridge legs of the type show i Fig The MV-side voltage ca be subdivided ito lower voltage -liks whereby the respective semicoductor devices are of the low-voltage class. The first of these optios is show i Fig This solutio would result from a implemetatio of a bridge leg as show i Fig. 12- o the MV side, whereby the idepedet stages of the -lik voltage are available. I case the MV-side coverter is built with a cascaded cocept, as the bridge show i Fig. 12-c), the structure show i Fig. 11-c) is suitable. Here, the MV-side coverter relies o a series coectio i order to deal with the voltage level, while the LV-side is still costructed with a sigle bridge. Figure 11: Modularizatio i voltage directio: No-modular MVad LV-sides; Modular series coected MV-side with access to itermediate levels ad o-modular LV-side; c) Modular series coected MV-side with iteral itermediate levels ad o-modular LV-side; d) Modular series coected MV-side with access to itermediate levels ad modular parallel coected LV-side; e) Modular series coected MV-side with idepedet itermediate levels ad modular parallel coected LV-side. i 2 u 2 e)

10 ± 1 u 2 1, ± 1 u 4 1, Á Degree of Power Coversio Partitioig Multi-Level Multi-Cell Two-Level Sigle-Cell LV ad MV 3ph. Itegrated LV ad MV 3ph. Fully Phase Modular 2 1 LV ad MV -lik LV ad MV Direct Matrix Cov. 0 0 c) Figure 12: Bridge leg arragemets utilized to deal with the MV level: Series coectio of devices; Series coectio i multilevel (NPC) arragemet; c) Multicell arragemet. The two fully-modular approaches, comprisig series coectio o the MV-side ad parallel coectio o the LV-side are preseted i Fig. 11-d). Depedig o the type of bridge leg arragemet utilized o the MV-side, the itermediate lik levels will be available, (cf. Fig. 11-d)) or uavailable (cf. Fig. 11-e)). It is importat to remark that the costructio of the SST utilizig oe of the aforemetioed strategies is madatory i order to deal with the MV level while reachig the high efficiecy goals. This icreased complexity brigs ew challeges i the costructio of SSTs such as optimum umber of series coected coverter modules [43], commo-mode currets, ad mixed MV- ad MF- electric field excitatio of isulatio materials [44]. This last topic is oe of the keys for the successful deploymet of SST techologies i the aforemetioed applicatio fields. The umerous degrees of freedom for modularizatio available i the SST lead to a vast amout of possible arragemets depedig o the differet levels of modularizatio i the three discussed modularizatio axes: Degree of power coversio partitioig; Degree of phase modularity ad umber of levels or series coected cells. Sice the level of modularity i each of these differet directios is idepedet from each other, these three axes ca be cosidered to be orthogoal to each other, eablig a represetatio as show i Fig. 13. Here, each elemet represets a specific desig with a certai degree of modularizatio i each of the axes. For example, a elemet close to the origi would represet a low level of modularity i all axes, i.e. a direct matrix-type structure o the MV- ad LV-sides without series coectio i the MV-side ad fully itegrated 3-phase LF iterfaces. O the other had, a elemet distat from the origi would represet a highly modular structure, i.e. a multi-stage power coversio system with series coectio of coverter cells o the MVside, parallel coectio o the LV-side ad idepedet modules iterfacig to each of the three phases o both MVad LV-side. I similar way, other cocepts ca be coceived, Á Number of Levels or Series / Parallel Cells Degree of Phase Modularity Figure 13: Graphical represetatio of the three mai degrees of modularity of SST topologies: Degree of power coversio partitioig; Degree of Phase Modularity ad Number of Levels or Series Coected Cells. Together these three modularity axes coform a fie mesh of optios from which the SST ca be costructed. Figure 14: Frot-ed trasformer high-frequecy lik cocept with output matrix-type coverter preseted i [35]. with differet levels of modularizatio i each of the differet axes. Fig. 13 qualitatively shows the vast amout of optios available for the costructio of SST for Smart-Grid applicatios. This classificatio based o level of modularity will be ow utilized to describe the previously reported solutios for 3-phase - iterfaces, most of which are also applicable i 1-phase systems, e.g. i tractio solutios. IV. PREVIOUSLY REPORTED SST STRUCTURES A umber of cocepts with various levels of modularity i the differet aforemetioed directios have bee studied i previous research projects. I the followig, a selectio of these cocepts which have bee recetly proposed will be briefly discussed together with their respective schematic represetatios. Belogig to the frot-ed/matrix-type output stage category, the coverter show i Fig. 14 ad discussed i detail i [35] achieves the high-frequecy operatio of the trasformer by coectio of a full-wave diode-rectifier to three idepedet ceter-taped trasformers. A IGBT switch realizes the

11 Figure 17: -lik coverter based SST, with MF side phasemodular, magetically idepedet 3-phase trasformer ad 3-phase itegrated (trasformer ad coverter) LV-side, preseted i [46]. Figure 15: Fully-modular multicell structure as preseted i [42]. Figure 18: Uidirectioal SST with -lik-based cascaded ad phase-modular MV-side ad 3-phase itegrated LV-side; idepedet 1-phase trasformers of the idividual cells with parallel coected secodary side rectifier stages [47]; represetatio of MV-side limited to oe phase. Figure 16: Idirect matrix-type, phase-modular multicell structure metioed i [45]. coectio of the star-poit of these trasformers at higher frequecies, thus selectig the polarity of the voltage applied to the secodary of the trasformer by turig the upper or lower IGBT o. O the secodary side, a direct matrix type coverter liks the coverter to the LV-side low-frequecy grid. A structure comprisig full modularity i the power flow directio, phase modularity ad series coectio of cells is preseted i Fig. 15. This fully-modular arragemet subdivides the complete complex coverter structure ito stadardized uits, which allows to idepedetly desig ad optimize the differet coverter modules. A advaced SST structure utilizig SiC devices o the MV-side was metioed i [45] ad is depicted i Fig. 16. This coverter implemets a idirect matrix-type coversio i the MV- ad LV-sides. Additioally, as ca be see, full modularity i the 3-phase coectio ad i the cascadig of coverter cells is performed i order to deal with the selected voltage levels. Fig. 17 presets a phase-modular cocept with MV-side cascaded cells ad magetically idepedet trasformers with electrically itegrated 3-phase LV-side high- ad lowfrequecy coectios. Give the lower voltage level o the LV-side, this structure relies o the availability of sigle power semicoductor devices i this voltage rage, which simplifies the costructio of the LV-side power electroic bridges. I order to deal with higher voltages while keepig a low compoet cout, the cocept preseted i Fig. 18 ad proposed i [47] utilizes gate-tur-off devices o the MV-side. These semicoductor devices, however, are characterized by slow switchig performace, which compromise the flexibility o the selectio of the trasformer s operatig frequecy. Additioally, this -lik based structure is costructed with a series coectio at the MV-side ad a 3-phase itegrated LV-side cocept. Structures with uidirectioal power trasfer capability have also bee proposed, as is the case for the coverter i Fig. 19 which was preseted i [48]. This coverter is characterized by a multicell boost-type iput stage based o a full-wave diode rectifier. The boost coverters are arraged ito modules whereby their isolated sides are coected i parallel ad feedig a 3-phase two-level iverter liked to the

12 Figure 19: Uidirectioal SST with sigle diode bridge rectifier iput stage with series coected diodes ad followig multi-cell curret shapig ad isolatio stage with parallel coected output rectifiers supplyig the lik of a 3-phase itegrated LV-side mais iterface, as preseted i [48]; represetatio of MV-side limited to oe phase. Figure 20: -lik three-stage coverter with cascaded MV-side arragemet ad itegrated 3-phase LV-side. The trasformer cosists o a 3-phase magetically itegrated costructio, as preseted i [49]. LV-side etwork. It should be oted that this uidirectioal structure reduces cosiderably the complexity of the system whe compared to the discussed fully bidirectioal structures. The magetic itegratio of a 3-phase trasformer results attractive due to the potetial reductio of required magetic core material. This is the case for the cocept proposed i [49] ad show i Fig. 20. This modular arragemet coects to the MV-side through a series coectio of modules, i.e. a multicell structure. Each of the MV-side modules feeds a idividual widig of a 3-phase/magetically-itegrated trasformer. O the LV-side, two full-wave diode bridges feed two series coected -liks which form part of a multilevel NPC structure utilized to lik to the LV grid with a 3-phase itegrated bridge. Similar to the previous cocept, the MV-side modules ca be replaced by matrix-type bridges i order to elimiate Figure 21: MV-side direct matrix-type coverter with cascaded MVside arragemet, itegrated 3-phase LV-side ad magetically itegrated 3-phase trasformer [50]. Figure 22: -lik-based modular cascaded MV- ad LV-side with 3-phase magetically itegrated 3-phase high-frequecy lik [51]. oe coversio stage, as preseted i Fig. 21 ad studied i [50]. Here, at the iput side, four-quadrat switches i H- bridge cofiguratio are utilized to feed a 3-phase magetically itegrated trasformer with high-frequecy excitatio. A sigle 3-phase secodary widig liked to a 3-phase itegrated bridge which supplies a -lik coected to a two level iverter liked to the LV-side grid. Aother type of three-stage, phase-modular ad multicell arragemet with magetically itegrated 3-phase trasformer is preseted i Fig. 22. This structure, proposed i [51] utilizes a multiwidig trasformer with combiatio of star ad delta coectios o the secodary sides. It should be oted however, that the magetic itegratio of the 3-phase trasformer results i a complex magetic circuit, where the couplig betwee the differet trasformer widigs must be carefully accouted for. A highly modular structure able to iterface three 3-phase grids is preseted i Fig. 23. This structure was developed i a large scale Europea project [52] studyig flexible coversio systems for future electric power distributio. The core compoet i this arragemet is a back-to-back fullbridge-based module which iterfaces o the oe side the LF grid ad o the other side performs the high-frequecy switchig which feeds the isolatio trasformer. As ca be see, this coverter structure is realized with full modularity i all aforemetioed directios. The coverter preseted i Fig. 24, deoted as ME- GALik [53] is based o a series multicell coectio at the MV-side ad -lik based power coversio chais o the MV- ad LV-side. O the LV-side, two parallel 3-phase itegrated two-level bridges are utilized i order to lik to the 3-phase grid. The - stages cosist of a series resoat structure ad are parallel coected o the LV-side, where they are liked to the aforemetioed two-level iverters. The coverter show i Fig. 25 realizes the lik to the MVside grid with a multilevel NPC-based arragemet comprisig SiC semicoductor devices [54, 55]. The high-frequecy coversio is performed by a 3-phase magetically itegrated trasformer with two secodary widigs coected i star ad delta respectively. Active rectifiers trasform this high frequecy waveforms from the trasformer s secodary to a sigle LV -lik feedig a two-level, 3-phase itegrated bridge liked to the LV-side grid.

13 Losses Space Costraied Applicatio / / / LF Trasformer / MF Trasformer / LFT LFT + Rect. & Iv. SST Losses Smart-Grid Applicatio / / / LF Trasformer / MF Trasformer / Figure 23: Fully phase-modular arragemet with cascaded iput ad output sides, idepedet 1-phase trasformers ad additioal 3-phase output [52]. Figure 24: SST with -lik-based cascaded ad phase-modular MVside where the coverter cell liks are coected to - coverter stages comprisig 1-phase trasformers; the trasformer secodary widigs are coected via idividual rectifier stages i parallel to the lik of the LV 3-phase itegrated iverter stage iterfacig to the LF 3-phase grid [53]. Figure 25: Three-stage -lik based approach with itegrated MV- ad LV-side 3-phase arragemet ad itegrated 3-phase highfrequecy lik [54, 55]. LFT LFT + Rect. & Iv. SST Figure 26: Schematic breakdow of losses for the stadard LFTbased ad the SST-based solutio for tractio ad Smart-Grid applicatio. V. CONCLUSIONS / OUTLOOK SST techology eables the direct coectio of power electroic coverters to MV etworks while realizig the task of isolatio ad voltage adaptatio, e.g. withi a isolated - coverter. The availability of power electroic circuits o the frot ad load ed of the system allows a complete cotrol of the power flow, eablig a trasfer of eergy with high power-quality level. Moreover, the availability of itermediate levels offers the possibility to coect loads/sources to the system, e.g. facilitatig the itegratio of reewable sources. This icrease i fuctioality, however, must be weighted agaist the icreased losses due to the itroductio of ew coversio stages ito the supply chai. I case of space costraied applicatios, where a high power-desity level is madatory, the reductio i losses achieved by the operatio of the trasformer with MF results i a overall system loss reductio, as show qualitatively i Fig I Smart-Grid applicatios, where the space limitatio is ot as critical as i e.g. tractio applicatios, the itroductio of additioal coversio stages of the SST results i a icrease i overall losses with respect to the state-of-the-art LFT trasformerbased system, as preseted i Fig I this cotext, moder semicoductor techologies such as silico-carbide represets a attractive optio, as it would eable a sigificat overall system loss reductio. Nevertheless, as stated earlier, the icrease i losses of Smart-Grid-orieted SSTs with respect to LFTs represets the price for the icreased fuctioality i the system. Amog these, the availability of a port has to be highlighted due to the cotiuous tred towards reewable eergy itegratio ad geeral implemetatio of -microgrids. I order to more

14 kw/$ Reliability Fuctioal Performace SST Efficiecy Reliability Fuctioal Performace Power 80 kw/$ 60 Desity SST Power Desity Efficiecy Low Frequecy LFT Trasformer + Rect. & Iv. Figure 27: Challeges i SSTs for Smart-Grid applicatios. The higher reached fuctioality with respect to a LFT (cf. ) has maily the price of lower reliability, lower efficiecy ad higher costs. Whe compared to a equally fuctioal system comprisig a LFT ad a back-to-back rectifier/iverter stage i the SST offers superior power desity ad efficiecy performace. clearly visualize the differet performace improvemets provided by SST techology i Smart-Grid applicatios, Figs. 27- ad show the performace space of SSTs agaist LFT techology ad LFT with series-coected rectifier-iverter stage, respectively. Whe compared to LFTs, SSTs offer a sigificat icrease i fuctioality ad power desity. However, efficiecy, reliability ad costs will be impaired due to the large amout of switchig devices required i the system. With respect to the straightforward solutio represeted by a LFT coupled to a rectifier-iverter stage, the SST offers a sigificat improvemet i power desity ad efficiecy with a comparable cost level, rederig this solutio very attractive for Smart-Grid applicatios. The shift of focus i moder eergy supply solutios towards higher levels of fuctioality must be accompaied by strog efforts towards higher reliability, which should ideally be competitive with LFT trasformer techology. Fulfillig this high reliability stadard while reachig high efficiecies is critical for the successful deploymet of SST techologies i tractio ad Smart-Grid applicatios. REFERENCES [1] L. Heiema ad G. Mauthe, The Uiversal Power Electroics Based Distributio Trasformer, a Uified Approach, i IEEE Power Electroics Specialists Coferece (PESC), 2001, pp [2] J. Kolar, J. Biela, S. Waffler, T. Friedli, ad U. 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