TC7660. Charge Pump DC-to-DC Voltage Converter. Package Types. Features. General Description. Applications. Functional Block Diagram TC7660

Transcription

1 Charge Pump DC-to-DC Voltage Converter Features Wide Input Voltage Range:.V to V Efficient Voltage Conversion (99.9%, typ) Excellent Power Efficiency (9%, typ) Low Power Consumption: µa V IN = V Low Cost and Easy to Use - Only Two External Capacitors Required Available in -Pin Small Outline (SOIC), -Pin PDIP and -Pin CERDIP Packages Improved ESD Protection ( kv HBM) No External Diode Required for High-Voltage Operation Applications RS- Negative Power Supply Simple Conversion of V to ±V Supplies Voltage Multiplication V OUT = ± n V Negative Supplies for Data Acquisition Systems and Instrumentation Functional Block Diagram Package Types PDIP/CERDIP/SOIC NC CAP GND CAP - General Description The device is a pin-compatible replacement for the industry standard charge pump voltage converter. It converts a.v to V input to a corresponding -.V to -V output using only two low-cost capacitors, eliminating inductors and their associated cost, size and electromagnetic interference (EMI). The on-board oscillator operates at a nominal frequency of khz. Operation below khz (for lower supply current applications) is possible by connecting an external capacitor from OSC to ground. The is available in -Pin PDIP, -Pin Small Outline (SOIC) and -Pin CERDIP packages in commercial and extended temperature ranges. V OSC LOW VOLTAGE (LV) V OUT V CAP OSC RC Oscillator Voltage Level Translator CAP- LV V OUT Internal Voltage Regulator Logic Network GND - Microchip Technology Inc. DSC-page

2 . ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings* Supply Voltage...V LV and OSC Inputs Voltage: (Note )... -.V to V SS for V <.V...(V.V) to (V ) for V >.V Current into LV... µa for V >.V Output Short Duration (V SUPPLY.V)...Continuous Package Power Dissipation: (T A C) -Pin CERDIP... mw -Pin PDIP... mw -Pin SOIC... mw Operating Temperature Range: C Suffix... C to C I Suffix...- C to C E Suffix...- C to C M Suffix...- C to C Storage Temperature Range...- C to C ESD protection on all pins (HBM)... kv Maximum Junction Temperature C * Notice: Stresses above those listed under Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. C µf FIGURE -: Test Circuit. I S V I L (V) C OSC R L C µf V OUT ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise noted, specifications measured over operating temperature range with V = V, C OSC =, refer to test circuit in Figure -. Parameters Sym Min Typ Max Units Conditions Supply Current I µa R L = Supply Voltage Range, High V H. V Min T A Max, R L = k, LV Open Supply Voltage Range, Low V L.. V Min T A Max, R L = k, LV to GND Output Source Resistance R OUT I OUT = ma, T A = C I OUT = ma, T A C (C Device) I OUT = ma, T A C (E and I Device) I OUT = ma, T A C (M Device) V = V, I OUT = ma, LV to GND C T A C V = V, I OUT = ma, LV to GND - C T A C (M Device) Oscillator Frequency f OSC khz Pin open Power Efficiency P EFF 9 9 % R L = k Voltage Conversion Efficiency V OUTEFF % R L = Oscillator Impedance Z OSC. M V = V k V = V Note : Destructive latch-up may occur if voltages greater than V or less than GND are supplied to any input pin. DSC-page - Microchip Technology Inc.

3 . TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, C = C = µf, ESR C = ESR C =, T A = C. See Figure -. SUPPLY VOLTAGE (V) SUPPLY VOLTAGE RANGE - - TEMPERATURE ( C) FIGURE -: Operating Voltage vs. Temperature. OUTPUT SOURCE RESISTANCE (Ω) k k Ω Ω SUPPLY VOLTAGE (V) FIGURE -: Output Source Resistance vs. Supply Voltage. POWER CONVERSION EFFICIENCY (%) FIGURE -: Power Conversion Efficiency vs. Oscillator Frequency. OUTPUT SOURCE RESISTANCE (Ω) 9 FIGURE -: vs. Temperature. I OUT = ma I OUT = ma V = V k k OSCILLATOR FREQUENCY (Hz) I OUT = ma V = V V = V - - TEMPERATURE ( C) Output Source Resistance k V = V V = V OSCILLATOR FREQUENCY (Hz) k OSCILLATOR FREQUENCY (khz) k OSCILLATOR CAPACITANCE (pf) FIGURE -: Frequency of Oscillation vs. Oscillator Capacitance. - - TEMPERATURE ( C) FIGURE -: Unloaded Oscillator Frequency vs. Temperature. - Microchip Technology Inc. DSC-page

4 Note: Unless otherwise indicated, C = C = µf, ESR C = ESR C =, T A = C. See Figure -. - V = V - OUTPUT VOLTAGE (V) LV OPEN 9 OUTPUT CURRENT (ma) OUTPUT VOLTAGE (V) SLOPE Ω LOAD CURRENT (ma) FIGURE -: Current. Output Voltage vs. Output FIGURE -: Current. Output Voltage vs. Load POWER CONVERSION EFFICIENCY (%) 9 V = V LOAD CURRENT (ma) SUPPLY CURRENT (ma) POWER CONVERSION EFFICIENCY (%) 9 9 V = V LOAD CURRENT (ma) SUPPLY CURRENT (ma) FIGURE -: Supply Current and Power Conversion Efficiency vs. Load Current. FIGURE -: Supply Current and Power Conversion Efficiency vs. Load Current. V = V OUTPUT VOLTAGE (V) - - FIGURE -9: Current. SLOPE Ω LOAD CURRENT (ma) Output Voltage vs. Load DSC-page - Microchip Technology Inc.

5 . PIN DESCRIPTIONS The descriptions of the pins are listed in Table -. TABLE -: PIN FUNCTION TABLE Pin No. Symbol Description NC No connection CAP Charge pump capacitor positive terminal GND Ground terminal CAP - Charge pump capacitor negative terminal V OUT Output voltage LV Low voltage pin. Connect to GND for V <.V OSC Oscillator control input. Bypass with an external capacitor to slow the oscillator V Power supply positive voltage input. Charge Pump Capacitor (CAP ) Positive connection for the charge pump capacitor, or flying capacitor, used to transfer charge from the input source to the output. In the voltage-inverting configuration, the charge pump capacitor is charged to the input voltage during the first half of the switching cycle. During the second half of the switching cycle, the charge pump capacitor is inverted and charge is transferred to the output capacitor and load. It is recommended that a low ESR (equivalent series resistance) capacitor be used. Additionally, larger values will lower the output resistance.. Ground (GND) Input and output zero volt reference.. Charge Pump Capacitor (CAP - ) Negative connection for the charge pump capacitor, or flying capacitor, used to transfer charge from the input to the output. Proper orientation is imperative when using a polarized capacitor.. Low Voltage Pin (LV) The low voltage pin ensures proper operation of the internal oscillator for input voltages below.v. The low voltage pin should be connected to ground (GND) for input voltages below.v. Otherwise, the low voltage pin should be allowed to float.. Oscillator Control Input (OSC) The oscillator control input can be utilized to slow down or speed up the operation of the. Refer to Section. Changing the Oscillator Frequency, for details on altering the oscillator frequency.. Power Supply (V ) Positive power supply input voltage connection. It is recommended that a low ESR (equivalent series resistance) capacitor be used to bypass the power supply input to ground (GND).. Output Voltage (V OUT ) Negative connection for the charge pump output capacitor. In the voltage-inverting configuration, the charge pump output capacitor supplies the output load during the first half of the switching cycle. During the second half of the switching cycle, charge is restored to the charge pump output capacitor. It is recommended that a low ESR (equivalent series resistance) capacitor be used. Additionally, larger values will lower the output ripple. - Microchip Technology Inc. DSC-page

6 . DETAILED DESCRIPTION. Theory of Operation The charge pump converter inverts the voltage applied to the V pin. The conversion consists of a twophase operation (Figure -). During the first phase, switches S and S are open and switches S and S are closed. C charges to the voltage applied to the V pin, with the load current being supplied from C. During the second phase, switches S and S are closed and switches S and S are open. Charge is transferred from C to C, with the load current being supplied from C. V GND S FIGURE -: Inverter. S S C S C V OUT = -V IN Ideal Switched Capacitor In this manner, the performs a voltage inversion, but does not provide regulation. The average output voltage will drop in a linear manner with respect to load current. The equivalent circuit of the charge pump inverter can be modeled as an ideal voltage source in series with a resistor, as shown in Figure -. - V R OUT FIGURE -: Switched Capacitor Inverter Equivalent Circuit Model. The value of the series resistor (R OUT ) is a function of the switching frequency, capacitance and equivalent series resistance (ESR) of C and C and the on-resistance of switches S, S, S and S. A close approximation for R OUT is given in the following equation: V OUT EQUATION R OUT = C R ESR ESR SW C C Where:. Switched Capacitor Inverter Power Losses The overall power loss of a switched capacitor inverter is affected by four factors:. Losses from power consumed by the internal oscillator, switch drive, etc. These losses will vary with input voltage, temperature and oscillator frequency.. Conduction losses in the non-ideal switches.. Losses due to the non-ideal nature of the external capacitors.. Losses that occur during charge transfer from C to C when a voltage difference between the capacitors exists. Figure - depicts the non-ideal elements associated with the switched capacitor inverter power loss. V - f PUMP FIGURE -: Capacitor Inverter. Non-Ideal Switched The power loss is calculated using the following equation: EQUATION f PUMP f OSC = R SW = on-resistance of the switches ESR C = equivalent series resistance of C ESR C = equivalent series resistance of C R SW S I DD C C ESR C R SW S R SW S RSW S P LOSS = I OUT ESR C I DD V R OUT I OUT LOAD DSC-page - Microchip Technology Inc.

7 . APPLICATIONS INFORMATION. Simple Negative Voltage Converter Figure - shows typical connections to provide a negative supply where a positive supply is available. A similar scheme may be employed for supply voltages anywhere in the operating range of.v to V, keeping in mind that pin (LV) is tied to the supply negative (GND) only for supply voltages below.v. C µf FIGURE -: Simple Negative Converter. The output characteristics of the circuit in Figure - are those of a nearly ideal voltage source in series with a resistor. Thus, for a load current of - ma and a supply voltage of V, the output voltage would be -.V. V * V OUT = -V for.v V V V OUT * C µf. Paralleling Devices To reduce the value of R OUT, multiple voltage converters can be connected in parallel (Figure -). The output resistance will be reduced by approximately a factor of n, where n is the number of devices connected in parallel. EQUATION R OUT = R OUT of n number of devices While each device requires its own pump capacitor (C ), all devices may share one reservoir capacitor (C ). To preserve ripple performance, the value of C should be scaled according to the number of devices connected in parallel.. Cascading Devices A larger negative multiplication of the initial supply voltage can be obtained by cascading multiple devices. The output voltage and the output resistance will both increase by approximately a factor of n, where n is the number of devices cascaded. EQUATION V OUT = n V R OUT = n R OUT of V C C n R L C FIGURE -: Paralleling Devices Lowers Output Impedance. V µf µf n µf * V OUT = -n V for.v V V FIGURE -: Increased Output Voltage By Cascading Devices. µf V OUT * - Microchip Technology Inc. DSC-page

8 . Changing the Oscillator Frequency The operating frequency of the can be changed in order to optimize the system performance. The frequency can be increased by over-driving the OSC input (Figure -). Any CMOS logic gate can be utilized in conjunction with a k series resistor. The resistor is required to prevent device latch-up. While TTL level signals can be utilized, an additional k pull-up resistor to V is required. Transitions occur on the rising edge of the clock input. The resultant output voltage ripple frequency is one half the clock input. Higher clock frequencies allow for the use of smaller pump and reservoir capacitors for a given output voltage ripple and droop. Additionally, this allows the to be synchronized to an external clock, eliminating undesirable beat frequencies. At light loads, lowering the oscillator frequency can increase the efficiency of the (Figure -). By lowering the oscillator frequency, the switching losses are reduced. Refer to Figure - to determine the typical operating frequency based on the value of the external capacitor. At lower operating frequencies, it may be necessary to increase the values of the pump and reservoir capacitors in order to maintain the desired output voltage ripple and output impedance. µf FIGURE -: C V k External Clocking. V CMOS GATE V OUT µf V C OSC V OUT C. Positive Voltage Multiplication Positive voltage multiplication can be obtained by employing two external diodes (Figure -). Refer to the theory of operation of the (Section. Theory of Operation ). During the half cycle when switch S is closed, capacitor C of Figure - is charged up to a voltage of V - V F, where V F is the forward voltage drop of diode D. During the next half cycle, switch S is closed, shifting the reference of capacitor C from GND to V. The energy in capacitor C is transferred to capacitor C through diode D, producing an output voltage of approximately: EQUATION V OUT = V V F V F where: V F is the forward voltage drop of diode D and V F is the forward voltage drop of diode D. FIGURE -: D D C V OUT = ( V ) - ( V F ) C Positive Voltage Multiplier.. Combined Negative Voltage Conversion and Positive Supply Multiplication Simultaneous voltage inversion and positive voltage multiplication can be obtained (Figure -). Capacitors C and C perform the voltage inversion, while capacitors C and C, plus the two diodes, perform the positive voltage multiplication. Capacitors C and C are the pump capacitors, while capacitors C and C are the reservoir capacitors for their respective functions. Both functions utilize the same switches of the. As a result, if either output is loaded, both outputs will drop towards GND. V FIGURE -: Frequency. Lowering Oscillator DSC-page - Microchip Technology Inc.

9 V C C D D V OUT = -V C V OUT = ( V ) - ( V F ) C FIGURE -: Combined Negative Converter and Positive Multiplier.. Efficient Positive Voltage Multiplication/Conversion Since the switches that allow the charge pumping operation are bidirectional, the charge transfer can be performed backwards as easily as forwards. Figure - shows a transforming -V to V (or V to V, etc.). The only problem here is that the internal clock and switch-drive section will not operate until some positive voltage has been generated. An initial inefficient pump, as shown in Figure -, could be used to start this circuit up, after which it will bypass the other (D and D in Figure - would never turn on), or else the diode and resistor shown dotted in Figure - can be used to force the internal regulator on. V OUT = -V - C µf M µf V - input FIGURE -: Conversion. Positive Voltage - Microchip Technology Inc. DSC-page 9

10 . PACKAGING INFORMATION. Package Marking Information -Lead PDIP ( mil) Example Example XXXXXXXX XXXXXNNN YYWW CPA e CPA -Lead CERDIP (. ) Example Example XXXXXXXX XXXXXNNN YYWW MJA e MJA -Lead SOIC (.9 mm) Example Example NNN C OA e C OA Legend: XX...X Customer-specific information Y Year code (last digit of calendar year) YY Year code (last digits of calendar year) WW Week code (week of January is week ) NNN Alphanumeric traceability code e Pb-free JEDEC designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( e) can be found on the outer packaging for this package. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. DSC-page - Microchip Technology Inc.

11 N NOTE E D E A A A L c b b e eb - Microchip Technology Inc. DSC-page

12 Note: For the most current package drawings, please see the Microchip Packaging Specification located at DSC-page - Microchip Technology Inc.

13 Note: For the most current package drawings, please see the Microchip Packaging Specification located at - Microchip Technology Inc. DSC-page

14 Note: For the most current package drawings, please see the Microchip Packaging Specification located at DSC-page - Microchip Technology Inc.

15 - Microchip Technology Inc. DSC-page

16 APPENDIX A: REVISION HISTORY Revision C (March ) The following is the list of modifications.. Updated Figure -.. Added Appendix A. Revision B (March ) Undocumented changes. Revision A (May ) Original release of this document. DSC-page - Microchip Technology Inc.

17 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X /XX Device Temperature Range Package Device: : DC-to-DC Voltage Converter Temperature Range: C = C to C E = - C to C I = - C to C (CERDIP only) M = - C to C (CERDIP only) Package: PA = Plastic DIP, ( mil body), -lead JA = Ceramic DIP, ( mil body), -lead OA = SOIC (Narrow), -lead OA = SOIC (Narrow), -lead (Tape and Reel) Examples: a) COA: Commercial Temp., SOIC package. b) COA:Tape and Reel, Commercial Temp., SOIC package. c) CPA: Commercial Temp., PDIP package. d) EOA: Extended Temp., SOIC package. e) EOA:Tape and Reel, Extended Temp., SOIC package. f) EPA: Extended Temp., PDIP package. g) IJA: Industrial Temp., CERDIP package h) MJA: Military Temp., CERDIP package. - Microchip Technology Inc. DSC-page

18 NOTES: DSC-page - Microchip Technology Inc.

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