0.4Ω (max) R ON Match (+3.0V Supply) 1.2Ω (max) Flatness (+3.0V Supply) 20Ω R ON (max) Switch (MAX4718) MAX4718EUB -40 C to +85 C 10 µmax MAX4718

Transcription

1 9-2627; Rev 2; 9/5 4.5/2, 3MHz Bandwidth, Dual SPDT General Description The low-voltage, low on-resistance (R ON ), dual single-pole/double throw (SPDT) analog switches operate from a single +.8V to +5.5V supply. These devices are designed for USB. and audio switching applications. The MAX477 features two 4.5 R ON (max) SPDT switches with.2 flatness and.3 matching between channels. The MAX478 features one 4.5 R ON (max) SPDT switch and one 2 R ON (max) SPDT switch. The 2 switch has a guaranteed matching and flatness of.4 and.2, respectively. These switches offer breakbefore-make switching (ns) with t ON <8ns and t OFF <4ns at +2.7V. The digital logic inputs are +.8V logic compatible with a +2.7V to +3.6V supply. These switches are packaged in a chip-scale package (UCSP ), significantly reducing the required PC board area. The chip occupies only a 2.mm.5mm area and has a 4 3 bump array with a bump pitch of.5mm. These switches are also available in -pin µmax and -pin TDFN packages. Applications USB. Signal Switching Circuits Battery-Operated Equipment Audio/Video-Signal Routing Headphone Switching Low-Voltage Data-Acquisition Systems Sample-and-Hold Circuits Cell Phones PDAs UCSP is a trademark of Maxim Integrated Products, Inc. µmax is a registered trademark of Maxim Integrated Products, Inc. Features USB. Signal Switching Compliant (TID = 423) 2ns (max) Differential Skew -3dB Bandwidth: > 3MHz Low 5pF On-Channel Capacitance Single-Supply Operation from +.8V to +5.5V 4.5 R ON (max) Switches ().3 (max) R ON Match (+3.V Supply).2 (max) Flatness (+3.V Supply) 2 R ON (max) Switch (MAX478).4 (max) R ON Match (+3.V Supply).2 (max) Flatness (+3.V Supply) Rail-to-Rail Signal Handling High Off-Isolation: -55dB (MHz) Low Crosstalk: -8dB (MHz) Low Distortion:.3% +.8V CMOS-Logic Compatible <.5nA Leakage Current at +25 C Ordering Information PART TEMP RANGE PIN/BUMP- PACKAGE TOP MARK MAX477EUB -4 C to +85 C µmax MAX477ETB -4 C to +85 C TDFN-EP* ACV MAX477EBC-T -4 C to +85 C 2 UCSP-2 ABH MAX478EUB -4 C to +85 C µmax MAX478ETB -4 C to +85 C TDFN-EP* ACW MAX478EBC-T -4 C to +85 C 2 UCSP-2 ABI *EP = Exposed paddle. Pin Configurations/Functional Diagrams/Truth Tables TOP VIEW (BUMP SIDE DOWN) NC GND C B A NC2 NO2 PART MAX477 MAX478 SPDT SPDT NO2 IN COM NO C2 A2 C3 A3 C4 B4 A4 UCSP IN2 COM2 NO2 NO COM IN NC TDFN COM2 IN2 NC2 GND IN_ NO_ OFF NC_ ON ON OFF SWITCHES SHOWN FOR LOGIC "" INPUT NO COM IN NC µmax COM2 IN2 NC2 GND Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at , or visit Maxim s website at

2 4.5/2, 3MHz Bandwidth, Dual SPDT ABSOLUTE MAXIMUM RATINGS (All voltages are referenced to GND.), IN_...-.3V to +6.V COM_, NO_, NC_ (Note )...-.3V to ( +.3V) Continuous Current COM_, NO_, NC_...±mA Peak Current COM_, NO_, NC_ (pulsed at ms, % duty cycle)...±2ma Continuous Power Dissipation (T A = +7 C) -Pin µmax (derate 5.6mW/ C above +7 C)...444mW -Pin TDFN (derate 24.4mW/ C above +7 C)...95mW 2-Bump UCSP (derate.4mw/ C above +7 C)...99mW Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Single +3V Supply ESD Method >2kV Operating Temperature Range...-4 C to +85 C Junction Temperature...+5 C Storage Temperature Range C to +5 C Lead Temperature (soldering, s)...+3 C Bump Temperature (soldering) Infrared (5s) C Vapor Phase (6s) C Note : Signals on COM_, NO_, or NC_ exceeding or GND are clamped by internal diodes. Limit forward-diode current to maximum current rating. ( = +2.7V to +3.6V, V IH = +.4V, V IL = +.5V, T A =, unless otherwise noted. Typical values are at = +3.V, T A = +25 C, unless otherwise noted.) (Notes 2, 3) PARAMETER SYMBOL CONDITIONS T A MIN TYP MAX UNITS V Analog Signal Range COM_, V NO_, V NC_ ANALOG SWITCH (Low R ON SPDT ) On-Resistance (Note 4) On-Resistance Match Between Channels (Notes 4, 5) On-Resistance Flatness (Note 6) NO_, NC_ Off-Leakage Current COM_ On-Leakage Current R ON R ON R FLAT(ON) I NO_(OFF), I NC_(OFF) I COM_(ON) ANALOG SWITCH (High R ON MAX478 SPDT 2) = 2.7V, I COM_ = ma; V NO_ or V NC_ =.5V = 2.7V, I COM_ = ma; V NO_ or V NC_ =.5V = 2.7V, I COM_ = ma; V NO_ or V NC_ =.V,.5V, 2.V = 3.6V, V COM_ =.3V, 3.3V; V NO_ or V NC_ = 3.3V,.3V = 3.6V, V COM_ =.3V, 3.3V; V NO_ or V NC_ =.3V, 3.3V, or floating On-Resistance (Note 4) R ON = 2.7V, I COM_ = ma; V NO_ or V NC_ =.5V V +25 C C C C C C na na 2

3 4.5/2, 3MHz Bandwidth, Dual SPDT ELECTRICAL CHARACTERISTICS Single +3V Supply (continued) ( = +2.7V to +3.6V, V IH = +.4V, V IL = +.5V, T A =, unless otherwise noted. Typical values are at = +3.V, T A = +25 C, unless otherwise noted.) (Notes 2, 3) PARAMETER SYMBOL CONDITIONS T A MIN TYP MAX UNITS On-Resistance Match Between Channels (Notes 4, 5) On-Resistance Flatness (Note 6) NO_, NC_ Off-Leakage Current COM_ On-Leakage Current DYNAMIC CHARACTERISTICS R ON R FLAT(ON) I NO_(OFF), I NC_(OFF) I COM_(ON) = 2.7V, I COM_ = ma; V NO_ or V NC_ =.5V = 2.7V, I COM_ = ma; V NO_ or V NC_ =.V,.5V, 2.V = 3.6V, V COM_ =.3V, 3.3V; V NO_ or V NC_ = 3.3V,.3V = 3.6V, V COM_ =.3V, 3.3V; V NO_ or V NC_ =.3V, 3.3V, or floating Turn-On Time t ON R L = 3, C L = 35pF, Figure ; V NO_, V NC_ =.5V; V IH =.5V, V IL = V Turn-Off Time t OFF R L = 3, C L = 35pF, Figure ; V NO_, V NC_ =.5V; V IH =.5V, V IL = V Break-Before-Make Time Delay t BBM V NO_, V NC_ =.5V; R L = 3, C L = 35pF, Figure 2 Skew t SKEW R S = 39, C L = 5pF, Figure 3 Charge Injection Q V GEN =.5V, R GEN =, C L =.nf, Figure 4 f = MHz; V NO_, V NC_ = V P-P ; R L = 5, C L = 5pF, Figure 5 Off-Isolation V ISO f = MHz; V NO_, V NC_ = V P-P ; R L = 5, C L = 5pF, Figure 5 f = MHz; V NO_, V NC_ = V P-P ; R L = 5, C L = 5pF, Figure 5 Crosstalk (Note 8) V CT f = MHz; V NO_, V NC_ = V P-P ; R L = 5, C L = 5pF, Figure 5 On-Channel -3dB Bandwidth BW Signal = dbm, R L = 5, C L = 5pF, Figure C C C C C C C 8 na na ns ns ns.5 2 ns +25 C 5 pc +25 C +25 C db db +25 C >3 MHz Total Harmonic Distortion THD V COM_ = 2V P-P, R L = C.3 % NO_, NC_ Off-Capacitance C NO_(OFF), C NC_(OFF) f = MHz, Figure C 9 pf 3

4 4.5/2, 3MHz Bandwidth, Dual SPDT ELECTRICAL CHARACTERISTICS Single +3V Supply (continued) ( = +2.7V to +3.6V, V IH = +.4V, V IL = +.5V, T A =, unless otherwise noted. Typical values are at = +3.V, T A = +25 C, unless otherwise noted.) (Notes 2, 3) PARAMETER SYMBOL CONDITIONS T A MIN TYP MAX UNITS Switch On-Capacitance C (ON) f = MHz, Figure C 5 pf DIGITAL I/O Input Logic High Voltage V IH.4 V Input Logic Low Voltage V IL.5 V Input Leakage Current I IN = +3.6V, V IN_ = or 5.5V POWER SUPPLY Power-Supply Range Supply Current I+ = +5.5V, V IN_ = V or - + na V µa ELECTRICAL CHARACTERISTICS Single +5V Supply ( = +4.2V to +5.5V, V IH = +2.V, V IL = +.8V, T A =, unless otherwise noted. Typical values are at = +5.V, T A = +25 C, unless otherwise noted.) (Notes 2, 3) PARAMETER SYMBOL CONDITIONS T A MIN TYP MAX UNITS V Analog Signal Range COM_, V NO_, V NC_ ANALOG SWITCH (Low R ON SPDT ) On-Resistance (Note 4) R ON = 4.2V, I COM_ = ma; V NO_ or V NC_ = 3.5V On-Resistance Match Between Channels (Notes 4, 5) On-Resistance Flatness (Note 6) NO_, NC_ Off-Leakage Current COM_ On-Leakage Current R ON R FLAT(ON) I NO_(OFF), I NC_(OFF) I COM_(ON) = 4.2V, I COM_ = ma; V NO_ or V NC_ = 3.5V = 4.2V, I COM_ = ma; V NO_ or V NC_ =.V, 2.V, 3.5V = 5.5V; V COM_ =.V, 4.5V; V NO_ or V NC_ =.V, 4.5V = 5.5V; V COM_ =.V, 4.5V; V NO_ or V NC_ =.V, 4.5V, or floating V +25 C C C C C na na 4

5 4.5/2, 3MHz Bandwidth, Dual SPDT ELECTRICAL CHARACTERISTICS Single +5V Supply (continued) ( = +4.2V to +5.5V, V IH = +2.V, V IL = +.8V, T A =, unless otherwise noted. Typical values are at = +5.V, T A = +25 C, unless otherwise noted.) (Notes 2, 3) PARAMETER SYMBOL CONDITIONS T A MIN TYP MAX UNITS ANALOG SWITCH (High R ON MAX478 SPDT 2) On-Resistance (Note 4) R ON = 4.2V, I COM_ = ma; V NO_ or V NC_ = 3.5V On-Resistance Match Between Channels (Notes 4, 5) On-Resistance Flatness (Note 6) NO_, NC_ Off-Leakage Current COM_ On-Leakage Current DYNAMIC CHARACTERISTICS R ON R FLAT(ON) I NO_(OFF), I NC_(OFF) I COM_(ON) = 4.2V, I COM_ = ma; V NO_ or V NC_ = 3.5V = 4.2V, I COM_ = ma; V NO_ or V NC_ =.V, 2.V, 4.5V = 5.5V; V COM_ =.V, 4.5V; V NO_ or V NC_ =.V, 4.5V = 5.5V, V COM_ =.V, 4.5V; V NO_ or V NC_ =.V, 4.5V, or floating Turn-On Time t ON V NO_, V NC_ = 3.V; R L = 3, C L = 35pF, Figure Turn-Off Time t OFF V NO_, V NC_ = 3.V; R L = 3, C L = 35pF, Figure Break-Before-Make Time Delay t BBM V NO_, V NC_ = 3.V; R L = 3, C L = 35pF, Figure C C C C C C C C 8 na na ns ns ns Skew t SKEW R S = 39, C L = 5pF, Figure 3 DIGITAL I/O.5 2 ns Input Logic High Voltage V IH 2. V Input Logic Low Voltage V IL.8 V Input Leakage Current I IN = 5.5V, V IN _ = V or - + na 5

6 4.5/2, 3MHz Bandwidth, Dual SPDT ELECTRICAL CHARACTERISTICS Single +5V Supply (continued) ( = +4.2V to +5.5V, V IH = +2.V, V IL = +.8V, T A =, unless otherwise noted. Typical values are at = +5.V, T A = +25 C, unless otherwise noted.) (Notes 2, 3) POWER SUPPLY PARAMETER SYMBOL CONDITIONS T A MIN TYP MAX UNITS Power-Supply Range Supply Current I+ = 5.5V, V IN_ = V or V µa Note 2: UCSP and TDFN parts are % tested at +25 C only, and guaranteed by design over the specified temperature range. µmax parts are % tested at and guaranteed by design over the specified temperature range. Note 3: The algebraic convention used in this data sheet is where the most negative value is a minimum and the most positive value is a maximum. Note 4: Guaranteed by design for UCSP and TDFN parts. Note 5: R ON = R ON(MAX) - R ON(MIN). Note 6: Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the specified analog signal ranges. Note 7: Guaranteed by design. Note 8: Between any two switches. (T A = +25 C, unless otherwise noted.) Typical Operating Characteristics 8 ON-RESISTANCE vs. COM_ VOLTAGE =.8V MAX477/8 toc 6 5 ON-RESISTANCE vs. COM_ VOLTAGE = 3V MAX477/8 toc2 5 4 ON-RESISTANCE vs. COM_ VOLTAGE = 5V MAX477/8 toc3 RON () 6 4 = 2.5V = 3V = 4.2V = 5V RON () 4 3 T A = +25 C T A = +85 C RON () 3 2 T A = +25 C T A = +85 C V COM_ (V) T A = -4 C V COM_ (V) T A = -4 C V COM _ (V) 6

7 4.5/2, 3MHz Bandwidth, Dual SPDT (T A = +25 C, unless otherwise noted.) ON-RESISTANCE vs. COM _ VOLTAGE 2 HIGH R ON SWITCH =.8V 8 RON () 6 = 2.5V 4 = 4.2V 2 = 5V V COM _ (V) MAX477/8 toc4 RON () Typical Operating Characteristics (continued) ON-RESISTANCE vs. COM_ VOLTAGE = 3V HIGH R ON SWITCH T A = +25 C T A = +85 C T A = -4 C V COM _ (V) MAX477/8 toc5 RON () ON-RESISTANCE vs. COM_ VOLTAGE = 5V HIGH R ON SWITCH T A = +85 C T A = +25 C T A = -4 C V COM _ (V) MAX477/8 toc6 LEAKAGE CURRENT (pa) LEAKAGE CURRENT vs. TEMPERATURE = 3V COM_ OFF-LEAKAGE COM_ ON-LEAKAGE MAX477/8 toc7 LEAKAGE CURRENT (pa) LEAKAGE CURRENT vs. TEMPERATURE = 5V COM_ ON-LEAKAGE COM_ OFF-LEAKAGE MAX477/8 toc8 LEAKAGE CURRENT (pa) LEAKAGE CURRENT vs. TEMPERATURE = 3V HIGH R ON SWITCH COM_ OFF-LEAKAGE COM_ ON-LEAKAGE MAX477/8 toc LEAKAGE CURRENT (pa) LEAKAGE CURRENT vs. TEMPERATURE = 5V HIGH R ON SWITCH COM_ OFF-LEAKAGE COM_ ON-LEAKAGE MAX477/8 toc CHARGE INJECTION (pc) CHARGE INJECTION vs. V COM C L = nf = 3V C L = nf = 5V MAX477/8 toc SUPPLY CURRENT (na) SUPPLY CURRENT vs. TEMPERATURE = 5V MAX477/8 toc2 = 3V V COM _ (V)

8 4.5/2, 3MHz Bandwidth, Dual SPDT (T A = +25 C, unless otherwise noted.) SUPPLY CURRENT (µa) SUPPLY CURRENT vs. LOGIC LEVEL 8 = 5V 6 4 = 3V LOGIC LEVEL (V) MAX477/8 toc3 LOGIC THRESHOLD (V) Typical Operating Characteristics (continued) LOGIC THRESHOLD vs. SUPPLY VOLTAGE V TH+ V TH SUPPLY VOLTAGE (V) MAX477/8 toc4 ton/toff (ns) TURN-ON/OFF TIME vs. SUPPLY VOLTAGE t OFF t ON SUPPLY VOLTAGE (V) MAX477/8 toc5 8 TURN-ON/OFF TIME vs. SUPPLY VOLTAGE HIGH R ON SWITCH MAX477/8 toc6 6 5 t ON, = 3.V TURN-ON/OFF TIME vs. TEMPERATURE MAX477/8 toc7 6 5 t ON, = 3.V TURN-ON/OFF TIME vs. TEMPERATURE HIGH R ON SWITCH t ON, = 5.V MAX477/8 toc8 ton/toff (ns) t ON t OFF ton/toff (ns) t OFF, = 3.V t ON, = 5.V t OFF, = 5.V ton/toff (ns) t OFF, = 3.V t OFF, = 5.V SUPPLY VOLTAGE (V) OUTPUT RISE/FALL-TIME DELAY (ps) RISE/FALL-TIME DELAY vs. SUPPLY VOLTAGE INPUT RISE/FALL TIME = 5ns FIGURE 4, C L = 5pF RISE DELAY FALL DELAY MAX477/8 toc9 OUTPUT RISE/FALL-TIME DELAY (ns) RISE/FALL-TIME DELAY vs. TEMPERATURE INPUT RISE/FALL TIME = 5ns FIGURE 4, C L = 5pF = 4.2V RISE DELAY FALL DELAY MAX477/8 toc2 MISMATCH (ps) RISE TIME TO FALL TIME MISMATCH vs. SUPPLY VOLTAGE INPUT RISE/FALL TIME = 5ns FIGURE 4, C L = 5pF MAX477/8 toc SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) 8

9 4.5/2, 3MHz Bandwidth, Dual SPDT (T A = +25 C, unless otherwise noted.) MISMATCH (ps) RISE TIME TO FALL TIME MISMATCH vs. TEMPERATURE INPUT RISE/FALL TIME = 5ns FIGURE 4, C L = 5pF = 4.2V MAX477/8 toc22 SKEW (ps) Typical Operating Characteristics (continued) SKEW vs. SUPPLY VOLTAGE INPUT RISE/FALL TIME = 5ns FIGURE 4, C L = 5pF MAX477 ONLY SUPPLY VOLTAGE (V) MAX477/8 toc23 SKEW (ps) SKEW vs. TEMPERATURE INPUT RISE/FALL TIME = 5ns FIGURE 4, C L = 5pF = 4.2V MAX477 ONLY MAX477/8 toc24 ON-LOSS (db) FREQUENCY RESPONSE = 3V/5V ON-LOSS OFF-ISOLATION MAX477/8 toc25 ON-LOSS (db) FREQUENCY RESPONSE = 3V/5V HIGH R ON SWITCH ON-LOSS OFF-ISOLATION MAX477/8 toc CROSSTALK -2 CROSSTALK -4.. FREQUENCY (MHz) -4.. FREQUENCY (MHz) TOTAL HARMONIC DISTORTION vs. FREQUENCY = 3V R L = 6 MAX477/8 toc27 TOTAL HARMONIC DISTORTION vs. FREQUENCY = 3V HIGH R ON SWITCH R L = 6 MAX477/8 toc28 THD (%). THD (%).. k k k FREQUENCY (Hz). k k k FREQUENCY (Hz) 9

10 4.5/2, 3MHz Bandwidth, Dual SPDT UCSP PIN µmax/ TDFN NAME A 7 NC2 A2 8 IN2 A3 9 COM2 FUNCTION Analog Switch 2 Normally Closed Terminal Analog Switch 2 Digital Control Input Analog Switch 2 Common Terminal A4 NO2 Analog Switch 2 Normally Open Terminal B 6 GND Ground. Connection. B4 Positive-Supply Voltage C 5 NC C2 4 IN C3 3 COM C4 2 NO EP Pin Description Analog Switch Normally Closed Terminal Analog Switch Digital Control Input Analog Switch Common Terminal Analog Switch Normally Open Terminal Exposed Pad (for TDFN package only). Connect to ground. Detailed Description The high-speed, low-voltage, low onresistance (R ON ), dual SPDT analog switches operate from a single +.8V to +5.5V supply. The switches feature break-before-make switching operation and fast switching speeds (t ON = 8ns (max), t OFF = 4ns (max)). These switches have low 5pF on-channel capacitance, which allows for 2Mbps switching of the data signals for USB./. applications. The MAX477 is designed to switch D+ and D- USB signals with a guaranteed skew of less than 2ns (see Figure 4) as measured from 5% of the input signal to 5% of the output signal. Applications Information Digital Control Inputs The logic inputs accept up to +5.5V regardless of supply voltage. For example, with a +3.3V supply, IN_ can be driven low to GND and high to +5.5V allowing for mixing of logic levels in a system. Driving the control logic inputs rail-to-rail minimizes power consumption. For a +3V supply voltage, the logic thresholds are.5v (low) and.4v (high); for a +5V supply voltage, the logic thresholds are.8v (low) and 2.V (high). Analog Signal Levels The on-resistance of the changes very little for analog input signals across the entire supply voltage range (see the Typical Operating Characteristics). The switches are bidirectional, so the NO_, NC_, and COM_ pins can be either inputs or outputs. Power-Supply Sequencing and Overvoltage Protection Caution: Do not exceed the absolute maximum ratings because stresses beyond the listed ratings may cause permanent damage to the device. Proper power-supply sequencing is recommended for all CMOS devices. Always apply before applying analog signals, especially if the analog signal is not current-limited. UCSP Application Information For the latest application details on UCSP construction, dimensions, tape carrier information, printed circuit board techniques, bump-pad layout, and recommended reflow temperature profile as well as the latest information on reliability testing results, go to the Maxim web site at to find the Application Note: USCP A Wafer-Level Chip-Scale Package. TRANSISTOR COUNT: 235 PROCESS: BiCMOS Chip Information

11 4.5/2, 3MHz Bandwidth, Dual SPDT MAX477/ MAX478 LOGIC INPUT V N_ Figure. Switching Time NO_ OR NC_ IN_ GND COM_ C L INCLUDES FIXTURE AND STRAY CAPACITANCE. V OUT = V N_ ( R L R L + R ON ) R L C L V OUT LOGIC INPUT SWITCH OUTPUT Test Circuits/Timing Diagrams V IH V IL V 5% V OUT t ON t OFF tr < 5ns tf < 5ns.9 x V UT.9 x V OUT IN DEPENDS ON SWITCH CONFIGURATION; INPUT POLARITY DETERMINED BY SENSE OF SWITCH. MAX477/ MAX478 V N_ NC_ NO_ COM_ V OUT LOGIC INPUT V IH V IL 5% IN_ R L 3 C L 35pF LOGIC INPUT GND V OUT.9 x V OUT t BBM Figure 2. Break-Before-Make Interval C L INCLUDES FIXTURE AND STRAY CAPACITANCE.

12 4.5/2, 3MHz Bandwidth, Dual SPDT IN+ R S R S NC OR NO NC2 OR NO2 IN MAX477 IN2 V IL TO V IH Test Circuits/Timing Diagrams (continued) COM COM2 C L C L OUT+ IN- OUT- RISE TIME DELAY = t INRISE - t OUTRISE FALL TIME DELAY = t INFALL - t OUTFALL RISE TIME TO FALL TIME MISMATCH = t OUTFALL - t OUTRISE t INFALL tinrise V IN+ V 5% 9% % % 9% V IN- 5% V t OUTFALL toutrise V OUT+ V 5% 9% % % 9% V OUT- 5% V t SKEW Figure 3. Output Signal Skew 2

13 4.5/2, 3MHz Bandwidth, Dual SPDT MAX477/ MAX478 V GEN R GEN Figure 4. Charge Injection V OR IN_ NC_ OR NO_ GND +5V COM_ IN_ V IL TO V IH nf COM V IN Test Circuits/Timing Diagrams (continued) C L V OUT V OUT IN IN NETWORK ANALYZER 5 OFF OFF 5 ON ON Q = ( V OUT )(C L ) V OUT OFF OFF LOGIC INPUT WAVEFORMS INVERTED FOR SWITCHES THAT HAVE THE OPPOSITE LOGIC SENSE. OFF-ISOLATION = 2log V OUT V IN ON-LOSS = 2log V OUT V IN 5 NC MAX477/ MAX478 NO* V OUT MEAS REF CROSSTALK = 2log V OUT V IN GND 5 5 MEASUREMENTS ARE STANDARDIZED AGAINST SHORTS AT IC TERMINALS. OFF-ISOLATION IS MEASURED BETWEEN COM_ AND "OFF" NO_ OR NC_ TERMINAL ON EACH SWITCH. ON-LOSS IS MEASURED BETWEEN COM_ AND "ON" NO_ OR NC_ TERMINAL ON EACH SWITCH. CROSSTALK IS MEASURED FROM ONE CHANNEL TO THE OTHER CHANNEL. SIGNAL DIRECTION THROUGH SWITCH IS REVERSED; WORST VALUES ARE RECORDED. *FOR CROSSTALK THIS PIN IS NO2. NC2 AND COM2 ARE OPEN. Figure 5. On-Loss, Off-Isolation, and Crosstalk nf COM_ MAX477/ MAX478 CAPACITANCE METER f = MHz NC_ or NO_ GND IN V IL OR V IH Figure 6. Channel Off/On-Capacitance 3

14 4.5/2, 3MHz Bandwidth, Dual SPDT Package Information (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to 2L, UCSP 4x3.EPS PACKAGE OUTLINE, 4x3 UCSP 2-4 F 4

15 4.5/2, 3MHz Bandwidth, Dual SPDT Package Information (continued) (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to e Ø.5±..6±. TOP VIEW 4X S H BOTTOM VIEW DIM A A MIN -.2 MAX.43.6 MIN -.5 MAX..5 A D D2 E E2 H L L b e c S α INCHES MILLIMETERS REF.94 REF BSC.5 BSC REF.498 REF 6 6 LUMAX.EPS D2 E2 GAGE PLANE A2 A c D b A α E L L FRONT VIEW SIDE VIEW PROPRIETARY INFORMATION TITLE: PACKAGE OUTLINE, L umax/usop APPROVAL DOCUMENT CONTROL NO. REV. 2-6 I 5

16 4.5/2, 3MHz Bandwidth, Dual SPDT Package Information (continued) (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to PIN INDEX AREA D E A A A2 DETAIL A E2 b L N LC D2.35x.35 -DRAWING NOT TO SCALEk L C PIN ID e [(N/2)-] x e REF. L 6, 8, &L, DFN THIN.EPS e e PACKAGE OUTLINE, 6,8, & 4L, TDFN, EXPOSED PAD, 3x3x.8 mm 2-37 G 2 COMMON DIMENSIONS SYMBOL MIN. MAX. A.7.8 D E A..5 L.2.4 k.25 MIN. A2.2 REF. PACKAGE VARIATIONS PKG. CODE N D2 E2 e JEDEC SPEC b [(N/2)-] x e T ±. 2.3±..95 BSC MO229 / WEEA.4±.5.9 REF T ±. 2.3±..95 BSC MO229 / WEEA.4±.5.9 REF T833- T33- T ±..5±. 2.3±. 2.3±..7±. 2.3±. T ±. 2.3±..65 BSC.5 BSC.4 BSC MO229 / WEEC MO229 / WEED ±.5.25±.5.2±.5.95 REF T ±. 2.3±..65 BSC MO229 / WEEC.3±.5.95 REF T ±. 2.3±..65 BSC MO229 / WEEC.3±.5.95 REF 2. REF 2.4 REF.4 BSC ± REF DOWNBONDS ALLOWED NO NO NO NO YES NO YES NO PACKAGE OUTLINE, 6,8, & 4L, TDFN, EXPOSED PAD, 3x3x.8 mm -DRAWING NOT TO SCALE G 2 2 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. 6 Maxim Integrated Products, 2 San Gabriel Drive, Sunnyvale, CA Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products, Inc.