Preliminary Program - SBMICRO Tutorials -

Transcription

1 Chair: Fabiano Fruett (UNICAMP, Brazil) Preliminary Program - SBMICRO Tutorials - Tuesday, September 2 nd Tutorial 1 08:40-10:20 Adaptive Microsystems Lab - From Technology to Devices and Microsystems Prof. Edmond Cretu University of British Columbia, Canada Tutorial 2 10:40-12:20 MEMS Fabrication in Academia Prof. Tomohiro Ishikawa Tohoku University, Japan 12:20-14:00 Tutorial 3 14:00-15:30 Memristive Nanodevices Jianhua Joshua Yang HP Labs, USA Tutorial 4 15:30-17:00 BTI in HKMG Devices - Physical Mechanism, Predictive Modeling and Process Dependence Prof. Souvik Mahapatra DEE - IIT Bombay, Mumbai, India 17:00-17:20 Visit to Exhibitors (booths) 17:20-18:20 Opening Ceremony 18:20-18:40 MSc and PhD Awards 18:40-19:00 SBMICRO Awards 19:00-19:20 Reception and Coktail 19:30-22:00 1

2 Keynote SBCCI 09:00-10:20 Robust Systems: From Clouds to Nanotubes Prof. Subhasish Mitra Stanford University, USA - Keynotes - Wednesday, September 3 rd Keynote SBMicro 10:40-12:00 Device Design Considerations for 14nm Node, 10nm Node and Beyond Bruce Bennet Doris IBM, Albany (NY), USA 12:00-14:00 Exhibitors (booths) 14:00-14:40 - Technical Sessions - Wednesday, September 3 rd Session 1 Optoelectronics I Chair: Newton Frateschi 14:40-15:00 Enabling III-V Integrated Photonics with Er-Doped Al 2 O 3 Films Paulo Felipe Jarschel, Mário Souza, Antônio Von Zuben, Antônio Ramos, Rafael Merlo and Newton Frateschi 15:00-15:20 Genetic Algorithm Applied to the Optimized Project of Semiconductor Microcavity Lasers Eduardo Cotta, Omar Neto and Fernando Coelho 15:20-15:40 Simulation and Experimental Investigation of One-Dimensional Porous Silicon Photonic Crystal Danilo Huanca and Walter Salcedo 15:40-16:00 Photonic Band Gap Maps for Wurtzite GaN and AlN Emerson G. Melo, Gustavo P. Rehder and Marco I. Alayo 16:00-16:20 Invited Talk I 16:20-17:00 Modeling of Stochastic BTI in Small Area Devices and its Impact on SRAM Performance Prof. Souvik Mahapatra (DEE - IIT Bombay, Mumbai, India) 2

3 Session 2 Modeling Chair: Paula G. Der Agopian 17:00-17:20 Effective Mobility Analysis of n- and p-types SOI Junctionless Nanowire Transistors Rodrigo T. Doria, Renan Trevisoli, Michelly de Souza and Marcelo A. Pavanello 17:20-17:40 Boosting the Performance of the Planar Power MOSFET by Using Diamond Layout Style Gabriel A. da Silva and Salvador P. Gimenez 17:40-18:00 Comparison of Analog Performance Between SOI and Bulk pfinfet Alberto V. Oliveira, Paula G. D. Agopian, Eddy Simoen, Cor Claeys and João A. Martino 18:00-18:20 A Simulation Study of Self-Heating Effect on Junctionless Nanowire Transistors Genaro Mariniello and Marcelo A. Pavanello Thursday, September 4 th Session 3 Optoelectronics II Chair: Giuseppe Cirino 08:20-08:40 Fabrication of Low Dark-Count PureB Single-Photon Avalanche Diodes Lin Qi, K. R. C. Mok, Mahdi Aminian, Edoardo Charbon and Lis K. Nanver 08:40-09:00 InGaAs/InAlAs Quantum Well Infrared Photodetectors for Operation in the 1.7 to 3.1 μm Wavelength Range Lesslie Guerra, Germano M. Penello, Luciana D. Pinto, Roberto Jakomin, Renato T. Mourão, Mauricio P. Pires, Marcos H. Degani, Marcelo Z. Maialle and Patricia L. Souza 09:00-09:20 CMOS Active-Pixel Sensor in Low Temperature Pedro Vitor Ferreira do Rosario, Luciana Pedrosa Salles, Artur Soares Bezerra de Mello and Davies William de Lima Monteiro 09:20-09:40 Dark Current Noise and Noise Gain in Quantum-Well Infrared Photodetectors Alvaro Diego Bernardino Maia, Barbara Paula Figueroa, Anibal Tiago Bezerra, Rudy Massami Sakamoto Kawabata, Mauricio Pamplona Pires and P. L. Souza 09:40-10:00 Microlenses and Photodetectors Integration for Augmenting Photocurrent José Miguel Gomes, Rui Pedro Rocha, José Higino Correia and João Paulo Carmo Exhibitors (booths) 10:00-10:20 Invited Talk II 10:40-11:20 An Immunoassay on Silicon Chip Prof. Tomohiro Ishikawa (Tohoku University, Japan) 3

4 Session 4 Radiation & Temperature Effects I Chair: Marcelo Pavanello 11:20-11:40 Improving MOSFETs Radiation Robustness by using the Wave Layout to Boost Analog ICs Applications Rafael Navarenho de Souza, Marcilei A. Guazzelli da Silveira and Salvador Pinillos Gimenez 11:40-12: nm SOI Process Development for High-T Applications in Harsh Environments Edval J. P. Santos and Henrique M. Vasconcelos 12:00-12:20 Quartz and GaPO 4 Pressure Transducers for High Resolution Applications in High Temperature: A Simulation Approach Leonardo B. M. Silva and Edval J. P. Santos 12:20-14:00 Invited Talk III 14:00-14:40 Effects of Scaling on Back End of Line Processing Patrick Verdonck (IMEC, Belgium) Session 5 Thin Films Chair: Patrick Verdonck 14:40-15:00 Synthesis of Anatase and Rutile Phases of TiO 2 by Atomic Layer Deposition: Substrate Effect Rodrigo S. Pessoa, Fabiano P. Pereira, Giorgio E. Testoni, William Chiappim, Homero S. Maciel and Lúcia V. Santos 15:00-15:20 Thin Titanium Oxide Films Deposited by e-beam Evaporation or by Sputtering Technique with Additional Rapid Thermal Oxidation Angélica D. de Barros, Ioshiaki Doi, Jacobus W. Swart and José A. Diniz 15:20-15:40 Characterization of the Semi-insulating Properties of Al 2 O 3 and AlHfO 3.5 for Power Devices Bárbara Alandia, Danilo R. Huanca, Verônica Christiano and Sebastião G. dos Santos Filho 15:40-16:00 Thin Titanium Oxide Films Obtained by RTP and by Sputtering Rodrigo Reigota César, Angélica Denardi de Barros, Ioshiaki Doi, José Alexandre Diniz and Jacobus W. Swart 16:00-16:20 16:20-18:20 Flash Presentations & Posters Chair: Davies William de Lima Monteiro 1. Temperature and Back-Gate Bias Influence on the Operation of Lateral SOI PIN Photodiodes Carla Novo, Renato Giacomini, Rodrigo T. Doria, Aryan Afzalian and Denis Flandre 2. Hydrogen Sensors with TiO 2 Michel A. Rodini, Thiago Costa, Inés Pereyra and Katia F. Albertin 4

5 3. Design of a Dual Lens System for a Micromachined Optical Setup Thiago D. O. Moura, T. Tsukamoto, Shuji Tanaka, Daniel Filgueiras and Davies W. de L. Monteiro 4. TeO 2 -ZnO Thin Films with Gold Nanoparticles as Passivating Materials for Power Devices Applications Leonardo Bontempo, Sebastião G. dos Santos Filho and Luciana R. P. Kassab 5. Dependence of the Optimum Length of Lightly Doped Region of GC SOI nmosfet with Front Gate Bias Rafael Assalti, Marcelo Antônio Pavanello, Denis Flandre and Michelly de Souza 6. Fabrication and Characterization of an Electromagnetic Valve in a Microfluidic Device Luiz Eduardo Bento Ribeiro and Fabiano Fruett 7. Field Emission Enhancement Achieved by Selective Multi-Walled Carbon Nanotubes Deposition over Silicon Microstructures Michel O. S. Dantas, Elisabete Galeazzo, Henrique E. M. Peres and Francisco J. Ramirez-Fernandez 8. Study of Gate Contact Over Active Área Marion Carmona, Quentin Hubert, Laurent Lopez, Franck Julien, Jean-Luc Ogier, Didier Goguenheim and Ludovic Beauvisage 9. Silicon Film Thickness Influence on Enhanced Dynamic Threshold UTBB SOI nmosfets Katia Regina Akemi Sasaki, Marc Aoulaiche, Eddy Simoen, Cor Claeys and João Antônio Martino 10. The Incorporation of Carbon Black Particle into Electrospun Nanofiber Demetrius Saraiva Gomes and Ana Neilde R. da Silva 11. Two-Dimensional Diffraction Grating Fabricated by Maskless Lithography Giuseppe A. Cirino, Arlindo N. Montagnoli and Newton C. Frateschi 12. Study of ph Sensors Based TiO 2 Nanotubes Gleydson Z. Monteiro, Pamella A. Marques, Inés Pereyra and Katia F. Albertin 13. Precision and Accuracy in the Measurements of Responsivity Tiago Gonçalves Santos, Marcela Freitas Mendonça, Reviane C. Lopes, Cristian A. Delfino and Gustavo S. Vieira 14. Graphene for Advanced Devices Applications Victor B. Sivieri, Pia Juliane Wessely, Udo Schwalke, Paula G. D. Agopian and João A. Martino 15. Development of ETM Microgrippers using Topology Optimization Ruben Horstmann, Liz K. R. Ardi, Gustavo P. Rehder, Emilio C. N. Silva and Marcelo N. P. Carreño 16. The Effect of X-Ray Radiation Dose Rate on Triple-Gate SOI FinFETs Parameters Caio C. M. Bordallo, Fernando F. Teixeira, Marcilei A. G. Silveira, João A. Martino, Paula G. D. Agopian, Eddy Simoen and Cor Claeys 17. Measurement of p n-junction Diode Behavior under Large Signal and High Frequency Maria Augusta R. B. L. Fernandes and Edval J. P. Santos 18. Drain Induced Barrier Thinning on TFETs with Different Source/Drain Engineering Márcio D. V. Martino, Paula G. D. Agopian and João A. Martino 19. Silicon Nitride for Nonlinear Optics Applications in the Telecommunications C-Band Deposited by ECR-CVD A. R. do Nascimento Jr., L. T. Manera, J. A. Diniz, A. R. Silva, M. V. P. dos Santos, Arismar Cerqueira S. Jr., L. A. M. Barea and N. C. Frateschi 20. Improved Continuous Model for Short Channel Double-Gate Junctionless Transistors Bruna Cardoso Paz, Fernando Ávila, Antônio Cerdeira and Marcelo Antônio Pavanello SBMicro Posters and Exhibitors (booths) 18:20-18:40 PANEL Industry and Goverment Strategies for Micro/Nanoelectronics in Brazil 18:20-19:40 5

6 Conference Dinner 20:00 Friday, September 5 th Session 6 Processing & Integration Chair: José Alexandre Diniz 08:20-08:40 Circular Polarization in n-type Resonant Tunneling Diodes With Si Delta-doping in the Quantum Well L. K. S. Herval, H. V. A. Galeti, V. Orsi Gordo, Y. Galvão Gobato, M. J. S. P. Brasil, D. Taylor and M. Henini 08:40-09:00 Multi-Chip Module (MCM-D) Using Thin Film Technology Cristina B. Adamo, Alexander Flacker, Wilson Freitas, Ricardo C. Teixeira, Michele O. da Silva and Antônio L. P. Rotondaro 09:00-09:20 Oxygen Plasma Surface Treatment Onto ITO Surface to Produce OLEDs Based on Europium Complex Gerson Santos, Fernando J. Fonseca and Luiz Pereira 09:20-09:40 Effect of Annealing Time on Memory Behavior of MOS Structures Based on Ge Nanoparticles Melissa Mederos Vidal, Segundo Nilo Mestanza Muñoz, Ioshiaki Doi and Jose Alexandre Diniz 09:40-10:00 Proposal of a Process Design Methodology of Fully Depleted SOI nmosfet using only Three Photolithograph Steps for Educational Application Ricardo C. Rangel and João Antônio Martino Exhibitors (booths) 10:00-10:20 Session 7 Transducers Chair: Edmond Cretu 10:40-11:00 Real-time Study of Adenosine-5 Monophosphate Adsorption with a Love Wave Sensor Based on Molecularly Imprinted Polymer Naima Lebal, H. Hallil, V. Raimbault, Jean Luc Lachaud, A. Krstulja, Raphael Delépée, Luigi Agrofoglio, Corinne Dejous and Dominique Rebière 11:00-11:20 Electrical Behavior of Devices Composed by Dielectrophoretically Deposited Carbon Nanotubes for Gas Sensing Applications Marcos C. Moraes, Elisabete Galeazzo, Henrique E. M. Peres, Michel O. S. Dantas and F. J. Ramirez-Fernandez 11:20-11:40 Electrolyte-Insulator-Semiconductor Field Effect Device for ph Detecting Rodrigo Reigota César, Angélica Denardi de Barros, Ioshiaki Doi, José Alexandre Diniz and Jacobus W. Swart 11:40-12:00 Sensing Different Mixtures of H 2, CH 4 and CO Through an Array of Chemiresistors Raphael G. Moreira, Lucia Higa Moreira and Sebastião Gomes dos Santos Filho 6

7 12:00-12:20 Piezoelectric Effect in Nanofibers Deposited with Magnetic Field Assisted Electrospinning Using Solutions with PVDF and Fe 3 O 4 Nanoparticles Juan Angel González-Sánchez, Rogerio Furlan, Raymond López-Hallman, Esteban Fachini and Ana Neilde Rodrigues da Silva 12:20-14:00 Invited Talk IV 14:00-14:40 A Prospective on Education of New Generations of devices in the FDSOI and FinFET Technologies Prof. Olivier Bonnaud (University of Rennes, France) Session 8 Radiation & Temperature Effects II Chair: João A. Martino 14:40-15:00 Effect of the Temperature on Junctionless Nanowire Transistors Electrical Parameters Down to 4K Renan Trevisoli, Michelly de Souza, Rodrigo T. Doria, Valeriya Kilchtyska, Denis Flandre and Marcelo Pavanello 15:00-15:20 Boosting the Radiation Hardness and Higher Reestablishing Pre-Rad Conditions by Using OCTO Layout Style for MOSFETs Leonardo N. de S. Fino, Marcilei A. G. da Silveira, Christian Renaux, Denis Flandre and Salvador Pinillos Ginemez 15:20-15:40 Effect of High Temperature on Analog Parameters of Asymmetric Self-Cascode SOI nmosfets Lígia M. d'oliveira, Denis Flandre, Marcelo A. Pavanello and Michelly de Souza 15:40-16:00 Influence of High Temperature on Substrate Effect of UTBB SOI nmosfets Vitor T. Itocazu, Victor Sonnenberg, Eddy Simoen, Cor Claeys and João Antônio Martino 16:00-16:20 Best Papers & Closing Ceremony 16:20-17:00 7