ENGINEERING CHANGE REQUEST (ECR)

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1 TH97/2478 TH09/2479 IATF , 68 Soi Chalongkrung 31, I-EA-T Free Zone, Lat Krabang Industrial Estate, Lat Krabang, Bangkok 10520, Thailand TEL. : (66 2) , , FAX. : (66 2) eic@eicsemi.com ENGINEERING CHANGE REQUEST (ECR) ECR No: Rev. Issue Date: 17/8/2012 Title: Changing of GR-15G by using a single dice Effective Date: Affected Change Category : Changing of Dice Affected Product Division : Product GR-15G supplying to SEW Samples : N/A Additional Reliability Data : Follow as our reliability standard Description and Purpose : As attach files 1. Improvement Rectifier project 2. GR-15G 1 chip 3. GR-15G 2 chips Reliability Data Summary : As attach files 1. GR15G(1chip) 2. GR15G(2chips) Supportive Documentation Attached? o Yes o No Supportive Documentation Attached? o Yes o No Electrical Characteristic Summary : As report ; Improvement Rectifier project Changed part Identification : The specification still be the same Disclaimer : EIC will consider this change approved unless specific condition are disapproved by providing in written document. Affected Device List : For Any Questions Concerning This Notification : M(M ) Page 1 of 2 Rev. 02 : August 25, 2009

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3 TH97/2478 TH09/2479 IATF ,68 Soi Chalongkrung 31 I-EA-T Free Zone, Lat Krabang Industrial Estate, Lat Krabang, Bangkok 10520, Thailand. (Registration No ) TEL. : (66 2) , , FAX. : (66 2) eic@eicsemi.com http. : // Experiment Introduction The improvement of rectifier product, we concern on VB > 1200V product by changing dice from 2 chips to 1 chip. The reason that we are trying to do the experiment is the new dice can gain higher VB than the old dice (VB > 1500V). Therefore, this experiment is going to compare dice between 2 chips and 1 chip. Purpose Comparison of GR-15G product between 2 chips and 1 chip structure. Factors Response 2 chips Electrical parameter 1 chip Method The dice is assembled by solder with lead wire which is shown as picture below. New dice

4 TH97/2478 TH09/2479 IATF ,68 Soi Chalongkrung 31 I-EA-T Free Zone, Lat Krabang Industrial Estate, Lat Krabang, Bangkok 10520, Thailand. (Registration No ) TEL. : (66 2) , , FAX. : (66 2) eic@eicsemi.com http. : // For assembly 2 chips Dice Lot. GF D The specification of 1 chip VB = V IR < 1µA, VR = 980V VF < 0.1A Trr < 300ns For assembly 1 chip Dice Lot. GF D The specification of 1 chip VB > 1600V IR < 1µA, VR = 1530V VF < 0.1A Trr < 300ns

5 TH97/2478 TH09/2479 IATF ,68 Soi Chalongkrung 31 I-EA-T Free Zone, Lat Krabang Industrial Estate, Lat Krabang, Bangkok 10520, Thailand. (Registration No ) TEL. : (66 2) , , FAX. : (66 2) eic@eicsemi.com http. : // Result We test the electrical parameter VF, VB, IR and Trr which compare between 2 chips and 1 chip Histogram of VF 2 chips, VF 1 chip Normal Variable VF 2 chips VF 1 chip Frequency Mean StDev N Data Histogram of VB 2 chips, VB 1 chip Normal Variable VB 2 chips VB 1 chip Mean StDev N Frequency Data

6 TH97/2478 TH09/2479 IATF ,68 Soi Chalongkrung 31 I-EA-T Free Zone, Lat Krabang Industrial Estate, Lat Krabang, Bangkok 10520, Thailand. (Registration No ) TEL. : (66 2) , , FAX. : (66 2) eic@eicsemi.com http. : // Histogram of IR 2 chips, IR 1 chip Normal Variable IR 2 chips IR 1 chip Mean StDev N Frequency Data Histogram of TRR 2 chips, TRR 1 chip Normal Frequency Variable TRR 2 chips TRR 1 chip Mean StDev N Data

7 TH97/2478 TH09/2479 IATF ,68 Soi Chalongkrung 31 I-EA-T Free Zone, Lat Krabang Industrial Estate, Lat Krabang, Bangkok 10520, Thailand. (Registration No ) TEL. : (66 2) , , FAX. : (66 2) eic@eicsemi.com http. : // The result shows that the new dice can pass the specification of GR-15G; hence we can change the material of these kinds of product by using a single chip to replace 2 chips product. These improvements we can gain more productivity and reduce cost of material. However, this experiment doesn t prove the function in tern of Reverse Energy Load yet. Thus we can change the dice from 2 chips to 1 chip in order to products which do not concern on Reverse Energy Load. Furthermore, we are going to prove in this issue later on. Conclusion The changing material from 2 chips to 1 chip is able to produce but be aware of some kind of product which concerning on Reverse Energy Load.

8 Dice 1 Chip Job Figure Remark Dice Dice Type : FR GPP 50x50 MIL V Load Lead (Lower) LEAD 0.78 GPP (SMA-L 50 MIL) Load Solder 1st Solder 1.3 x 280 o C Load Dice 1st Dice 50 mil FR GPP Load Solder 2nd Solder 1.3 x 280 o C Load Lead (Upper) Test visual

9 Tranfer - Visual - Quantity : 75 pcs. - Electrical - Defective of IR 2 Pcs. -Yield = 97.33% Spec. IF(A) = 0.1, IR(µA) = 0.96 VF_H(mV) = 1750, VR(V) = Quantity : 75 pcs. Yield is % Mold Test - Electrical - Quantity : 100 pcs. Spec.IF(A) = 0.1, IR(µA) = 0.96, SI(mA) = 30 I1(mA) = T(mS) = 10, DV1(V) = 140 I2(mA) = 0.15 T(mS) = 20, DV2(V) = 18 VB_H(mV) = 2000, VB_L(mV) = 1680 VF_H(mV) = 1750, VR(V) = 1650 TRR_L(nS) = 75, TRR_H(nS) = 240 Results Yield is 91% Detial of loss - SD+IR 2 Pcs., VB+IR 2 Pcs. - VB+DV+IR 4 Pcs. - Electrical - Quantity : Kpcs. Spec.IF(A) = 0.1, IR(µA) = 0.96 T(mS) = 25 I1(mA) = T(mS) = 15, DV1(V) = 140 I2(mA) = 0.15 T(mS) = 20, DV2(V) = 18 VB_H(mV) = 2500, VB_L(mV) = 1650 VF_H(mV) = 1775, VF_L(mV) = 1000 VR(V) = 1600 Results Yield is 96.11%

10 Dice 2 Chip Job Figure Remark Dice Dice Type : FR GPP 50x50 MIL V Load Lead (Lower) LEAD 0.78 GPP (SMA-L 50 MIL) Load Solder 1st Solder 1.3 x 280 o C Load Dice 1st Dice 50 mil FR GPP Load Solder 2nd Solder 1.2 x 280 o C Load Dice 2nd Dice 50 mil FR GPP

11 Load Solder 3rd Solder 1.3 x 280 o C Load Lead (Upper) --- Tranfer Mold Test Test visual - Visual - Quantity : 75 pcs. Is Normal - Electrical - Yield 100 % Spec. IF(A) = 0.1, IR(µA) = 0.96 VF_H(mV) = 1970, VR(V) = Quantity : 75 pcs. Yield is 100% - Electrical - Quantity : 100 pcs. Spec. VF_H(V) = 1.970, IF(A) = 0.1 VR(V) = 1650, IR(µA) = 0.96 TRR_L(nS) = 75, TRR_H(nS) = 280 Results Yield is 100% - Electrical - Quantity : Kpcs. Spec.IF(A) = 0.1, IR(µA) = 0.96 T(mS) = 25 I1(mA) = T(mS) = 15, DV1(V) = 140 I2(mA) = 0.15 T(mS) = 20, DV2(V) = 18 VB_H(mV) = 2500, VB_L(mV) = 1600 VF_H(mV) = 1975, VF_L(mV) = 1000 Results Yield is 97.18%

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