IDT6116SA IDT6116LA. CMOS Static RAM 16K (2K x 8-Bit)
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1 CMOS Static RAM 16K (2K x 8-Bit) IDT6116SA IDT6116LA Features High-speed access and chip select times Military: 2/2/3/4//7/9/12/1 (max.) Industrial: 2/2/3/4 (max.) Commercial: 1/2/2/3/4 (max.) Low-power coumption Battery backup operation 2V data retention voltage (LA version only) Produced with advanced CMOS high-performance technology CMOS process virtually eliminates alpha particle soft-error rates Input and output directly TTL-compatible Static operation: no clocks or refresh required Available in ceramic and plastic 24-pin DIP 24-pin Thin Dip 24-pin SOIC and 24-pin SOJ Military product compliant to MIL-STD-833 Class B Description The IDT6116SA/LA is a bit high-speed static RAM organized as 2K x 8. It is fabricated using IDT's high-performance high-reliability CMOS technology. Access times as fast as 1 are available. The circuit also offers a reduced power standby mode. When goes HIGH the circuit will automatically go to and remain in a standby power mode as long as remai HIGH. This capability provides significant system level power and cooling savings. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically coumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully static asynchronous circuitry is used requiring no clocks or refreshing for operation. The IDT6116SA/LA is packaged in 24-pin 6 and 3 mil plastic or ceramic DIP 24-lead gull-wing SOIC and 24-lead J-bend SOJ providing high board-level packing deities. Military grade product is manufactured in compliance to the latest version of MIL-STD-883 Class B making it ideally suited to military temperature applicatio demanding the highest level of performance and reliability. Functional Block Diagram A ADDRESS DECODER 128 X 128 MEMORY ARRAY VCC GND A 1 I/O INPUT DATA CIRCUIT I/O CONTROL I/O 7 OE WE CONTROL CIRCUIT 389 drw 1 2 Integrated Device Technology Inc. 1 FEBRUARY 21 DSC-389/3
2 Pin Configuratio A 7 A6 A A4 A 3 A2 A1 A I/O I/O 1 I/O 2 GND P24-2 P24-1 D24-2 D24-1 SO24-2 SO DIP/SOIC/SOJ Top View VCC A8 A9 WE OE A1 389 drw 2 I/O7 I/O6 I/O I/O4 I/O3 Military Commercial and Industrial Temperature Ranges Capacitance (TA = +2 C f = 1. MHZ) Symbol Parameter (1) Conditio Max. Unit CIN Input Capacitance VIN = V 8 pf CI/O I/O Capacitance VOUT = V 8 pf NOTE: 1. This parameter is determined by device characterization but is not production tested. Absolute Maximum Ratings (1) 389 tbl 3 Symbol Rating Com'l. Mil. Unit VTERM (2) Terminal Voltage with Respect to GND -. to to +7. V Pin Description Name Description TA TBIAS Operating Temperature Temperature Under Bias to +7 - to +12 o C - to to +13 o C A - A1 Address Inputs TSTG Storage Temperature - to to +1 o C I/O - I/O7 Data Input/Output PT Power Dissipation W Chip Select IOUT DC Output Current ma WE OE VCC GND Write Enable Output Enable Power Ground 389 tbl tbl 4 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditio above those indicated in the operational sectio of this specification is not implied. Exposure to absolute maximum rating conditio for extended periods may affect reliability. 2. VTERM must not exceed VCC +.V. Truth Table (1) Mode OE WE I/O Standby H X X High-Z Read L L H Read L H H High-Z Write L X L DATAIN NOTE: 1. H = VIH L = VIL X = Don't Care. 389 tbl 2 2
3 Recommended Operating Temperature and Supply Voltage Grade Ambient Temperature GND Vcc Military - O C to +12 O C V.V ± 1% Industrial -4 O C to +8 O C V.V ± 1% Commercial O C to +7 O C V.V ± 1% 389 tbl Military Commercial and Industrial Temperature Ranges Recommended DC Operating Conditio Symbol Parameter Min. Typ. Max. Unit VCC Supply Voltage 4... (2) V GND Ground V VIH Input High Voltage VCC +. V VIL Input Low Voltage -. (1).8 V 1. VIL (min.) = 3.V for pulse width less than 2 once per cycle. 2. VIN must not exceed VCC +.V. 389 tbl 6 DC Electrical Characteristics (VCC =.V ± 1%) IDT6116SA IDT6116LA Symbol Parameter Test Conditio Min. Max. Min. Max. Unit ILI Input Leakage Current VCC = Max. VIN = GND to VCC MIL. COM'L. 1 2 µa ILO Output Leakage Current VCC = Max. = VIH VOUT = GND to VCC MIL. COM'L. 1 2 µa VOL Output Low Voltage IOL = 8mA VCC = Min..4.4 V VOH Output High Voltage IOH = -4mA VCC = Min V 389 tbl 7 DC Electrical Characteristics (1) (VCC =.V ± 1% VLC =.2V VHC = VCC -.2V) 6116SA1 6116SA2 6116LA2 6116SA2 6116LA2 6116SA3 6116LA3 Symbol Parameter Power Com'l Only Com'l & Ind Mil Com'l & Ind Mil Com'l. & Ind. Mil Unit ICC1 ICC2 ISB ISB1 Operating Power Supply Current < VIL Outputs Open VCC = Max. f = Dynamic Operating Current < VIL Outputs Open VCC = Max. f = fmax (2) Standby Power Supply Current (TTL Level) > VIH Outputs Open VCC = Max. f = fmax (2) Full Standby Power Supply Current (CMOS Level) > VHC VCC = Max. VIN < VLC or VIN > VHC f = SA ma LA SA ma LA SA ma LA SA ma LA All values are maximum guaranteed values. 2. fmax = 1/tRC only address inputs are cycling at fmax f = mea address inputs are not changing. 389 tbl
4 DC Electrical Characteristics (1) (continued) (VCC =.V ± 1% VLC =.2V VHC = VCC -.2V) 6116SA4 6116LA4 6116SA 6116LA Military Commercial and Industrial Temperature Ranges 6116SA7 6116LA7 6116SA9 6116LA9 6116SA LA SA1 6116LA1 Symbol Parameter Power Com'l & Ind Mil Mil Only Mil Only Mil Only Mil Only Mil Only Unit ICC1 ICC2 ISB Operating Power Supply Current < VIL Outputs Open VCC = Max. f = Dynamic Operating Current < VIL Outputs Open VCC = Max. f = fmax (2) Standby Power Supply Current (TTL Level) > VIH Outputs Open VCC = Max. f = fmax (2) SA ma LA SA ma LA SA ma LA ISB1 Full Standby Power Supply Current (CMOS Level) > VHC VCC = Max. VIN < VLC or VIN > VHC f = SA LA ma 1. All values are maximum guaranteed values. 2. fmax = 1/tRC only address inputs are toggling at fmax f = mea address inputs are not changing. 389 tbl 9 Data Retention Characteristics Over All Temperature Ranges (LA Version Only) (VLC =.2V VHC = VCC.2V) Typ. (1) Max. Symbol Parameter Test Condition Min. 2.V 3.V 2.V 3.V Unit VDR VCC for Data Retention 2. V ICCDR Data Retention Current MIL. COM'L µa tcdr (3) Chip Deselect to Data Retention Time > VHC VIN > VHC or < VLC tr (3) Operation Recovery Time trc (2) IILII Input Leakage Current 2 2 µa 1. TA = + 2 C 2. trc = Read Cycle Time. 3. This parameter is guaranteed by device characterization but is not production tested. 389 tbl 1 4
5 Low VCC Data Retention Waveform Military Commercial and Industrial Temperature Ranges VCC 4.V VDR 2V DATA RETENTION MODE 4.V tcdr tr VIH VDR VIH 389 drw 3 AC Test Conditio Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels AC Test Load GND to 3.V 1.V 1.V See Figures 1 and tbl 11 V V 48Ω 48Ω 2Ω 3pF* 2Ω pf* 389 drw drw Figure 1. AC Test Load *Including scope and jig. Figure 2. AC Test Load (for tolz tclz tohz twhz tchz & tow) 6.42
6 Military Commercial and Industrial Temperature Ranges AC Electrical Characteristics (VCC = V ± 1% All Temperature Ranges) Symbol Read Cycle Parameter 6116SA1 (1) 6116SA2 6116LA2 6116SA2 6116LA2 6116SA3 6116LA3 Min. Max. Min. Max. Min. Max. Min. Max. trc Read Cycle Time taa Address Access Time ta Chip Select Access Time tclz (3) Chip Select to Output in Low-Z toe Output Enable to Output Valid tolz (3) Output Enable to Output in Low-Z tchz (3) Chip Deselect to Output in High-Z tohz (3) Output Disable to Output in High-Z toh Output Hold from Address Change tpu (3) Chip Select to Power Up Time tpd (3) Chip Desele ct to Power Down Time Unit 389 tbl 12 AC Electrical Characteristics (VCC = V ± 1% All Temperature Ranges) (continued) Symbol Read Cycle Parameter 6116SA4 6116LA4 6116SA (2) 6116SA7 (2) 6116SA9 (2) 6116SA12 (2) 6116SA1 (2) 6116LA (2) 6116LA7 (2) 6116LA9 (2) 6116LA12 (2) 6116LA1 (2) Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. trc Read Cycle Time taa Address Access Time ta Chip Select Access Time tclz (3) Chip Select to Output in Low-Z toe Output Enable to Output Valid tolz (3) Output Enable to Output in Low-Z tchz (3) Chip Deselect to Output in High-Z tohz (3) Output Disable to Output in High-Z toh Output Hold from Address Change Unit 1. C to +7 C temperature range only. 2. C to +12 C temperature range only. 3. This parameter guaranteed with the AC Load (Figure 2) by device characterization but is not production tested. 389 tbl 13 6
7 Military Commercial and Industrial Temperature Ranges Timing Waveform of Read Cycle No. 1 (13) trc ADDRESS taa toh OE toe tohz () tolz () ta tclz () tchz () DATA VALID ICC tpu VCC Supply Currents ISB tpd 389 drw 6 Timing Waveform of Read Cycle No. 2 (124) trc ADDRESS toh taa toh PREVIOUS DATA VALID DATA VALID 389 drw 7 Timing Waveform of Read Cycle No. 3 (134) ta tclz () tchz () DATA VALID 389 drw 8 1. WE is HIGH for Read cycle. 2. Device is continously selected is LOW. 3. Address valid prior to or coincident with traition LOW. 4. OE is LOW.. Traition is measured ±mv from steady state
8 Military Commercial and Industrial Temperature Ranges AC Electrical Characteristics (VCC = V ± 1% All Temperature Ranges) 6116SA1 (1) 6116SA2 6116LA2 6116SA2 6116LA2 6116SA3 6116LA3 Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Unit Write Cycle twc Write Cycle Time tcw Chip Select to End-of-Write taw Address Valid to End-of-Write tas Address Set-up Time twp Write Pulse Width twr Write Recovery Time twhz (3) Write to Output in High-Z tdw Data to Write Time Overlap tdh (4) Data Hold from Write Time tow (34) Output Active from End-of-Write 389 tbl 14 AC Electrical Characteristics (VCC = V ± 1% All Temperature Ranges) (continued) 6116SA4 6116LA4 6116SA (2) 6116SA7 (2) 6116SA9 (2) 6116SA12 (2) 6116SA1 (2) 6116LA (2) 6116LA7 (2) 6116LA9 (2) 6116LA12 (2) 6116LA1 (2) Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit Write Cycle twc Write Cycle Time tcw Chip Select to End-of-Write taw Address Valid to End-of-Write tas Address Set-up Time twp Write Pulse Width twr Write Recovery Time 1 twhz (3) Write to Output in High-Z tdw Data to Write Time Overlap tdh (4) Data Hold from Write Time 1 tow (34) Output Active from End-of-Write 389 tbl 1 1. C to +7 C temperature range only. 2. C to +12 C temperature range only. 3. This parameter guaranteed with AC Load (Figure 2) by device characterization but is not production tested. 4. The specification for tdh must be met by the device supplying write data to the RAM under all operation conditio. Although tdh and tow values will vary over voltage and temperature the actual tdh will always be smaller than the actual tow. 8
9 Military Commercial and Industrial Temperature Ranges Timing Waveform of Write Cycle No. 1 (WE Controlled Timing) (127) twc ADDRESS taw tas twp (7) (3) twr tchz (6) WE PREVIOUS DATA VALID twhz (6) (4) tdw (6) tow tdh DATA (4) VALID DATAIN DATA VALID 389 drw 9 Timing Waveform of Write Cycle No. 2 ( Controlled Timing) (1237) twc ADDRESS taw twr (3) tas tcw WE tdw tdh DATAIN DATA VALID 389 drw 1 1. WE or must be HIGH during all address traitio. 2. A write occurs during the overlap of a LOW and a LOW WE. 3. twr is measured from the earlier of or WE going HIGH to the end of the write cycle. 4. During this period the I/O pi are in the output state and the input signals must not be applied.. If the LOW traition occurs simultaneously with or after the WE LOW traition the outputs remain in the high-impedance state. 6. Traition is measured ±mv from steady state. 7. OE is continuously HIGH. If OE is LOW during a WE controlled write cycle the write pulse width must be the larger of twp or (twhz + tdw) to allow the I/O drivers to turn off and data to be placed on the bus for the required tdw. If OE is HIGH during a WE controlled write cycle this requirement does not apply and the write pulse is the specified twp. For a controlled write cycle OE may be LOW with no degradation to tcw
10 Ordering Information Military IDT 6116 Device Type XX Power XXX Speed X Package X Process/ Temperature Range B Military Commercial and Industrial Temperature Ranges Military (- C to+12 C) Compliant to MIL-STD-883 Class B TD D 3 mil CERDIP (D24-1) 6 mil CERDIP (D24-2) 2* 2* 3* ** Speed in nanoseconds SA LA Standard Power Low Power *Available in 3 mil packaging only. **Available in 6 mil packaging only. 389 drw 11 Ordering Information Commercial & Industrial IDT 6116 Device Type XX Power XXX Speed X Package X Process/ Temperature Range Blank I Commercial ( C to +7 C) Industrial (-4 C to +8 C) TP P SO Y 1* mil Plastic DIP (P24-1) 6 mil Plastic DIP (P24-2) 3 mil Small Outline IC Gull-Wing Bend (SO24-2) 3 mil SOJ J-Bend (SO24-4) Speed in nanoseconds SA LA Standard Power Low Power *Available in commercial temperature range and standard power only. 389 drw 12 1
11 Datasheet Document History Military Commercial and Industrial Temperature Ranges 1/7/ Updated to new format Pg Added Industrial Temperature range offerings Pg. 9 1 Separated ordering information into military commercial and industrial temperature range offerings Pg. 11 Added Datasheet Document History 8/9/ Not recommended for new desig 2/1/1 Removed "Not recommended for new desig" CORPORATE HEADQUARTERS for SALES: for Tech Support: 297 Stender Way or sramhelp@idt.com Santa Clara CA 94 fax: x433 The IDT logo is a registered trademark of Integrated Device Technology Inc
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