CURRICULUM VITAE. Academic Qualifications: Exam. Passed University/Board Year Division Position. Ph.D. A.M.U., Aligarh

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1 1 CURRICULUM VITAE Name : DR. FAIYAZUR RAHMAN Present Position : Assistant Professor Department of Physics, Aligarh Muslim University Aligarh (U.P.) Permanent Address : Al-Hamd 103, Street No.04 Greater Azad Enclave Dhorra Aligarh Contact No. : ID : faiziphys@gmail.com Academic Qualifications: Exam. Passed University/Board Year Division Position Ph.D. A.M.U., Aligarh M.Phil. A.M.U., Aligarh M.Sc. (Physics) A.M.U., Aligarh 1984 I Third B.Sc. (Hons.) A.M.U., Aligarh 1982 I - PUC (Science) A.M.U., Aligarh 1979 I - High School Bihar Board 1978 I - Specialization : Semiconductor Devices & Material Science Ph.D. Topic : Diffusion of Boron Through Patterned Silicon. Papers at International : 19 (Kindly See Annexure-III) Journals Papers at Int./National : 24 (Kindly See Annexure-IV) Conferences/Workshops Research Project : 02 (Kindly see Annexure-VI) Scholarships Awarded : 1. Post Graduate Merit Scholarship

2 2 2. Senior Research Fellowship Awarded from Ministry of Defence, Government of India, New Delhi. Foreign Assignment : Assistant Professor (Kindly see Annexure-VII) Department of General Sciences, Yanbu Industrial College, Yanbu, K.S.A. Teaching Experience : 19 years At Post Graduate Level : 14 years At Graduate Level : 19 years Research Experience : 25 years Supervision of Student at Ph.D. level: One Supervision of Students at Post Graduate Level: Papers Taught: 1. M.Sc. Seminar Lecture : 7 2. M.Sc. Project : 11 At Post Graduate Level Theory Papers : 1. Analog Electronics 2. Digital Electronics 3. Microprocessor Laboratory : 1. Microprocessor (M.Sc. Final) 2. General Lab (M.Sc. Previous) At Graduate Level Theory Papers : 1. Electronics 2. Electricity and Magnetism 3. Condensed Matter Physics Laboratory : 1. Electronics (B.Sc. Final) 2. General Lab. (B.Sc. II Year) 3. General Lab. (B.Sc. I year) Course Development Activities: 1. Convener and Member of syllabus revision committee for Post Graduate and Under Graduate Courses in the Department of Physics, A.M.U., Aligarh, India. 2. Member of syllabus revision committee in the Department of General Sciences, Yanbu Industrial College, K.S.A. Assignment from the Department:

3 3 1. Chief scrutinizer 2. In-charge : B. Sc. (Hons) Labs Other University Activities / Administration: 1. Member of National Science Day organized by the Department of Physics, A.M.U., Aligarh, India. 2. Verifying Officer during admission at B.Sc. (Hons.) and M.Sc (Physics) 3. Warden, Mohd. Habib Hall & Nadeem Tarin Hall, AMU, Aligarh. 4. Member of the Advisory Committee of DRS-I (SAP). ANNEXURE I Refresher / Orientation Course Attended: 1. Refresher Course University Grants Commission, Academic Staff College, A.M.U., Aligarh, India from to Orientation Course University Grant Commission, Academic Staff College, A.M.U., Aligarh, India from to Refresher Course University Grant Commission, Academic Staff College, A.M.U., Aligarh, India from to

4 4 ANNEXURE II Research Project : Two (A)1. UFR No. : Title of the Project : Synthesis and Modifications of Nitride Films by Swift Heavy Ion Irridation. 3. Name of the Funding Agency : Inter University Accelerator Centre (Formerly Nuclear Science Centre), Post Box No , Aruna Asaf Ali Marg, New Delhi Duration : 3 years 5. Fellowship : JRF and Contingency / Consumables 6. Remarks : Principal Investigator (B) 1. F.No. : /2013(SR) 2. Title of the Project : Modeling and Simulation of II-V semiconductors based lasing nano heterostructure 3. Name of the Funding Agency : UGC, New Delhi 4. Duration : 2 years 5. Remarks : Co-Principal Investigator

5 5 ANNEXURE III Papers in International Journals / Proceedings: 1. Rezq Naji Aljawafi, F.Rahman, Khalid M.Batoo, Effect of grain size and grain boundary defects on electrical and magnetic properties of Cr doped ZnO nanoparticles, Paper accepted (online), Journal of molecular Structure (2014) 2. R.Yadav, P.Lal, F.Rahman, S.Dalela, P.A.Alvi, Investigation of Material Gain of In 0.90 Ga 0.10 As 0.59 P 0.41 /InP Lasing, Nano-Heterostructure, International Journal of Modern Physics B, Vol. No. 10 (2014) 3. M.Sharma, R.Yadav, P.Lal, F.Rahman, P.A.Alvi, Model Gain Characteristics of step SCH InGaP/GaAs MQW based nanoscale hetrerostructure, Advances in Microelectronics Engineering (AIME) Vol. 2 Issue 2, Sajid Husain, Nasir Ali, P.A. Alvi, F.Rahman, Nickel sublattice effects on the optical properties of ZnO Nanocrystals, Journal of Optoelectronics Eng. Vol.1 No.1 (2013) pp DOI:10:126091/joe Rezq Naji Aljawfi, F.Rahman, D.K.Shukla, Effect of the annealing temperature on the structural and magnetic properties of ZnO nanoparticles, Vol. 99 (2013) 18-20, Materials Letters. 6. S.Husain, F.Rahman, W.Khan, A.H.Naqvi, Effect of Mn substitution on Structural and Optical Properties of ZnO nanoparicles, AIP Cof.Proc.1536, 3 3(2013). 7. Rashmi Sharma, Pyara Lal, F.Rahman, P.A.Alvi, Model Gain Study of SQW and MQW S based Nano-heterostructures, AIP Conf. Proc. 1536, pp (2013) 8. Sapna Gupta, F.Rahman, M.J.Siddiqui, P.A.Alvi, Strain profile in nitride based multilayer nano-heterostructures, Journal of Physica B 411(2013) Rezq Naji Aljawfi, F.Rahman, Khalid Mujasam Batoo, Surface Defect Mediated Magnetic Interactions and Ferromagnetism in Cr/Co Co-doped Nanoparticles, Journal of Magnetism and Magnetic Materials 332 (2013) Sapna Gupta, F.Rahman, P.A.Alvi Nano- Modeling of GaInN/InN Multilayer Heterostructure, Nano Trends: A Journal of Nano Technology and its Applications Vol.13, Issue 2(2012) p.1-15 (ISSN X). 11. Pyare Lal, Shobna Dixit, Saurabh Dalela, F.Rahman, Parvez A Alvi, Gain Simulation of Lasing nano- heterostructure Al 0.10 Ga 0.90 As/GaAs, Journal of Physica E 46(2012) p

6 6 12. F.Rahman, Three Dimensional Modeling of Boron Diffusion into Silicon, International Journal of Electronics Engineering, Vol. 4, No. 2, 2012, p (ISSN: ) 13. F.Rahman, Simulation of the Effect of Oxide on Impurity Diffusion in Silicon, International Journal of Global Technology Initiatives (IJGT), Vol. 1 F 1-3, (ISSN: ). 14. Sapna Gupta, F.Rahman, P.A.Alvi, Strain Profile in GaN/AlGaN Nanoheterostructure, AIP Conf. Proc (2013), pp P.A.Alvi, S.Z.Hashmi, S.Dalela, F.Rahman, Mathematical Simulation of Graphene with Modified C-C Bond Length and Transfer Energy, Journal of Nano Electron Physics, 3(2011) No.4, P P.A.Alvi, Sapna Gupta, Meha Sharma, Swati Jha, F.Rahman, Computational modeling of novel InN/Al 0.30 In 0.70 N multilayer nano-heterostructure, Journal of Physica E 44 (2011) p Pyare Lal, Rashmi Yadav, F.Rahman, P.A.Alvi, Carrier Induced Gain Simulation of InGaAlAs/InP Nano-Heterostructure, Journal of Advanced Science Engineering and Medicine, Vol.5 pp. 1-8 (2013). 18. S.A. Abbasi, Ateeq A. Khan and F. Rahman, Investigation and Modeling of Masking Oxide Effects on Boron Diffusion into Silicon, Journal of Engineering, Vol. 12, No. 2, pp , S.A. Abbasi and F. Rahman, A Model for Boron Diffusion Through Patterned Silicon, Journal of Electrochemical Society, USA, Vol. 142, No. 11, Nov

7 7 ANNEXURE IV Papers at International/ National Conferences / Workshops: 1. Rezq Naji Aljawafi, F,Rahman, Effect of grain and grain boundary defects on electrical properties of Cr doped Zno nanoparicles, International Conference on Nanoscience and Nanotechnology Aligarh Nano IV International 2014, Department of Applied Physics, AMU, Aligarh, March 8-10, Sajid Hussain, F.Rahman, Effect of Annealing on Morphology of Aluminium Nitride Thin Film, International Conference on Nanoscience and Nanotechnology Aligarh Nano IV International 2014, Department of Applied Physics, AMU, Aligarh, March 8-10, Pyare Lal, Rashmi Yadav, F. Rahman, M.J. Siddiqui and Parvez Alvi, Gain Investigation on Strained InGaAlAs/AnP Lasing Nano-Heterostructure International Conference on Multimedia Signal Processing and Communication Technologies(IMPACT-2013), November 2013, AMU, Aligarh. 4. F. Rahman, Effects of Annealing on AlN thin Films, 4G long term evaluation(lte) Tech. 2013, AMU, Aligarh 5. Accelerator Users Workshop, Inter University Accelerator Center (Formerly Nuclear Science Center), New Delhi, July 06-08, F.Rahman, Mohd. Faiyaz, Rizq Naji Aljawfi, Structural and Magnetic Properties of pure ZnO Nanoparticles National Conference on Nanoscience and Nanotechnology,March 15-16, 2013, Department of Applied Physics, AMU, Aligarh. 7. F.Rahman, Sajid Husain, Nasir Ali, Wasi Khan, A.H.Naqvi. Effect of Al doping on Structural and Optical Properties of ZnO Nanoparticles, 4 th International Conference on Recent Advances in Composite Materials (ICRACM-2013), International Center, Goa, India, February 18-21, F.Rahman, Simulation of the Effect of Oxide on Impurity Diffusion in Silicon, International Conference on Global Technology Initiative, March 29-30,,2012, Rizvi College of Engineering, Mumbai, India. 9. Pyara Lal, Rini Singh, F.Rahman, S.Dalela, P.A.Alvi, Materials and Mode Gain Simulation of InGaAlAs/InP lasing Nano-heterostructure in TE Mode, National Conference on Current Trends in Materials Research, March 17-19, 2012, Department of Physics, University of Rajasthan, Jaipur, India.

8 8 10. Sapna Gupta, F.Rahman, P.A.Alvi, SIimulation of Quantum Parameters for InN/GaInN multilayer nanostructure, National Conference on Current Trends in Materials Research, March 17-19, 2012, Department of Physics, University of Rajasthan, Jaipur, India. 11. Nasir Ali, F.Rahman, W.Khan, Synthesis and characterization of Aluminum doped ZnO, National Conference on Nanoscience and Nanotechnology,March 10-12, 2012, Department of Applied Physics, AMU, Aligarh. 12. F.Rahman, Synthesis and Characterization of Nickel doped ZnO Nanoparticles, National workshop on Advancement of Nano Materials and its Application, Feb.09-11,2012,Department of Physics, D.A-V. College, Kanpur, India. 13. P.A. Alvi, Pyara Lal, S.Z. Hashmi, F. Rahman, Simulation of Lasing Characteristics of InGaAlAs/InP SAQ Laser, International Conference OPTICS 11, May 23-25, 2011, Calicut, Kerala India. 14. Faiyazur Rahman, A Mathematical Modeling of Boron Diffusion into Silicon, International Conference ICNSNT, March 28-29, 2011, Gulberga, Karnataka. India. 15. Faiyazur Rahman and Fauran Singh, Synthesis and Modification of Nitride Films by Swift Heavy Ion Irridation, Advancement of Nano Materials and its Application, Department of Physics, DAV College, Kanpur, Feb , 2011, India th Accelerator User Workshop, Inter University Accelerator Center, New Delhi, December 17-18, th Accelerator User Workshop, Inter University, New Delhi, July 6-7, F. Rahman et al. Investigation and Modeling of Masking Oxide Effects on Boron Diffusion in Silicon, National Conference on Materials, Components and Application, February 15-16, 2003 (MCA 03). 19. F. Rahman et al. A Two Dimensional Modeling of Boron Diffusion Through Patterned Silicon, National Conference on Advanced Materials (NSAM-2002), March 17-19, 2002, Gorakhpur, India. 20. F. Rahman, Influence of Oxide on Impurity Diffusion in Silicon, National Conference on Materials and Semiconductors Technologies in Electronics Research (MASTER-2000), Nov. 8-10, 2000, Pantnagar. 21. F. Rahman et al. Modeling of Three Dimensional Diffusion of Boron through patterned Silicon, Vth International Conference on Microelectroncis (ICM 93), Dhahran, KSA, December 14-16, F. Rahman et al. Three Dimensional Modeling of Oxide Effects of Diffusion in Silicon, 7 th International Conference on Numerical Analysis of Semiconductor

9 9 Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 8-12, F. Rahman et al. Effect on Masking Geometry of Diffusion of Boron into Silicon, 14 th National Conference (NSD-90), AMU, Aligarh, March 12-14, F. Rahman et al. A Comparative Study of Models of Impurity Diffusion in Silicon, Vth International Workshop on Physics of Semiconductor Devices, New Delhi, India, December 11-16, ANNEXURE V Session Chaired : International Conference on Latest Trends in Nanoscience and Nano Technology (ICNSNT), Khwaja Banda Nawaz College of Engineering, India, March 28-29, 2011, Gulbarga, Karnataka.

10 10 ANNEXURE VI Book Published : Transition Metal Doped ZnO: Synthesis Optical and Structural properties (A revolutionary semiconductor) By Sajid Hussain and F. Rahman LAMBERT Academic Publishing Deutschland, Germany ISBN:

11 11 ANNEXURE- VII Foreign Assignment : 1. Assistant Professor from 6 th Sep to 5 th Dec Department of General Sciences P.O. Box: Yanbu Industrial College Yanbu Al-Sinayah Yanbu, K.S.A. 2. Best teacher award from Yanbu Industrial College, Yanbu, K.S.A. 3. General Coordinator in Physics, Yanbu Industrial College, Yanbu, K.S.A. 4. Member of the following team: (i) (ii) (iii) Technical Evaluation Committee Quality Assurance Programme Curriculum Committee 5. Following courses have been developed: (i) (ii) General Physics-II (PHY-201) for Bachelor Students. Physics for Geometics (PHY-102) for Geometics Engineering Students.