BASIC LAB 1 INTRODUCTION TO BASIC PROCESS SIMULATION USING TSUPREM4 & TWB
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1 SEMICONDUCTOR PHYSICS EMT 471/3 BASIC LAB REPORT BASIC LABS: 1, 2, 3, 4 NAME MATRIC NO. BASIC LAB TOTAL MARKS : MARKS 59
2 BASIC LAB 1 INTRODUCTION TO BASIC PROCESS SIMULATION USING TSUPREM4 & TWB i. 2D PMOS structure ii. 1D cut-line plot of boron concentration, arsenic concentration and net doping concentration. i. Discuss the 2D PMOS structure in term of dopant concentration ii. Discuss the 1D cut-line plot of boron concentration, arsenic concentration and net doping concentration 60
3 BASIC LAB 2 INTRODUCTION TO DEVICE SIMULATION USING MEDICI & TWB i. Simulation of a diode a) Diode structure generated in MEDICI b) 1D cut-line plot of doping concentration and net doping concentration c) 1D plot of current Vs time d) 1D plot of anode voltage Vs time ii. Hole concentration a) 1D plot of hole concentration Vs distance iii. Electron concentration a) 1D plot of electron concentration Vs distance Discuss the results 61
4 BASIC LAB 3 SIMULATION ON HETEROJUNCTION DEVICES: SiGe HBT & HEMT 1. RESULTS & DISCUSSION OF SiGe HBT SIMULATION i. 2D SiGe structure generated in MEDICI ii. 1D plot of doping concentration Vs distance iii. SiGe 1D plot of band diagram iv. Gummel plot (IV curve) v. Current gain Discuss each of the results 2. RESULTS & DISCUSSION OF HEMT SIMULATION i. 2D HEMT device structure generated in MEDICI ii. 1D plot of doping concentration and electron concentration iii. HEMT 1D plot of band diagram iv. Current flow v. Gate characteristic (drain current Vs gate voltage) Discuss each of the results 3. CONCLUSION 62
5 BASIC LAB 4 INTRODUCTION TO DEVICE SIMULATION USING DAVINCI & TWB i. 3D NMOS device structure (only one structure based on line 40 in dvex1 need to be included) ii. Source doping concentration profile iii. Gate doping concentration profile Discuss the results 63
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