NOT RECOMMENDED FOR NEW DESIGN
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1 echnical Data RF Power Field Effect ransistor N- Channel Enhancement- ode Lateral OSFE Designed for broadband commercial and industrial applications with frequencies up to 1000 Hz. he high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applications in 26 volt base station equipment. ypical wo- one Performance at 945 Hz, 26 Volts Output Power 60 Watts PEP Power Gain 17 db Efficiency 40% ID -31 dbc Capable of Handling 10:1 26 Vdc, 945 Hz, 60 Watts CW Output Power Features Integrated ESD Protection Designed for aximum Gain and Insertion Phase Flatness Excellent hermal Stability Characterized with Series Equivalent Large- Signal Impedance Parameters Low Gold Plating hickness on Leads. L Suffix Indicates 40μ Nominal. RoHS Compliant In ape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. able 1. aximum Ratings Rating Symbol Value Unit Drain-Source Voltage V DSS - 0.5, +65 Vdc Gate-Source Voltage V GS - 0.5, + 15 Vdc otal Device C = 25 C Derate above 25 C P D Storage emperature Range stg - 65 to +150 C Case Operating emperature C 150 C Operating Junction emperature J 200 C able 2. hermal Characteristics W W/ C Characteristic Symbol Value (1) Unit hermal Resistance, Junction to Case R θjc 1.1 C/W able 3. ESD Protection Characteristics Human Body odel achine odel est Conditions Document Number: RF Rev. 11, 9/ Hz, 60 W, 26 V LERL N- CHNNEL BRODBND RF POWER OSFE CSE 360B-05, SYLE 1 NI- 360 Class 1 (inimum) 1 (inimum) 1. F calculator available at Select Software & ools/development ools/calculators to access F calculators by product., Inc., ll rights reserved. 1
2 able 4. Electrical Characteristics ( C = 25 C unless otherwise noted) Characteristic Symbol in yp ax Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS = 65 Vdc, V GS = 0 Vdc) I DSS 10 μdc Zero Gate Voltage Drain Leakage Current (V DS = 26 Vdc, V GS = 0 Vdc) Gate- Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc) On Characteristics Gate hreshold Voltage (V DS = 10 Vdc, I D = 200 μdc) Gate Quiescent Voltage (V DS = 26 Vdc, I D = 450 mdc) Drain- Source On- Voltage (V GS = 10 Vdc, I D = 1.3 dc) Forward ransconductance (V DS = 10 Vdc, I D = 4 dc) Dynamic Characteristics Input Capacitance (V DS = 26 Vdc ± 30 1 Hz, V GS = 0 Vdc) Output Capacitance (V DS = 26 Vdc ± 30 1 Hz, V GS = 0 Vdc) Reverse ransfer Capacitance (V DS = 26 Vdc ± 30 1 Hz, V GS = 0 Vdc) I DSS 1 μdc I GSS 1 μdc V GS(th) Vdc V GS(Q) 3.7 Vdc V DS(on) Vdc g fs 5.3 S C iss 98 pf C oss 50 pf C rss 2 pf (continued) 2
3 able 4. Electrical Characteristics ( C = 25 C unless otherwise noted) (continued) Characteristic Symbol in yp ax Unit Functional ests (In Freescale est Fixture, 50 ohm system) wo- one Common- Source mplifier Power Gain f1 = Hz, f2 = Hz) wo- one Drain Efficiency f1 = Hz, f2 = Hz) 3rd Order Intermodulation Distortion f1 = Hz, f2 = Hz) Input Return Loss f1 = Hz, f2 = Hz) wo- one Common- Source mplifier Power Gain f1 = Hz, f2 = Hz and f1 = Hz, f2 = Hz) wo- one Drain Efficiency f1 = Hz, f2 = Hz and f1 = Hz, f2 = Hz) 3rd Order Intermodulation Distortion f1 = Hz, f2 = Hz and f1 = Hz, f2 = Hz) Input Return Loss f1 = Hz, f2 = Hz and f1 = Hz, f2 = Hz) Power Output, 1 db Compression Point (V DD = 26 Vdc, P out = 60 W CW, I DQ = 450 m, f1 = Hz) Common- Source mplifier Power Gain (V DD = 26 Vdc, P out = 60 W CW, I DQ = 450 m, f1 = Hz) Drain Efficiency (V DD = 26 Vdc, P out = 60 W CW, I DQ = 450 m, f1 = Hz) G ps db η % ID dbc IRL db G ps 17 db η 39 % ID -31 dbc IRL -16 db P 1dB 70 W G ps 17 db η 51 % 3
4 V GG RF INPU C6 C1 + B1 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 C7 Z1 Z2 Z3 Z4 Z5 C2 Z6 L x icrostrip x icrostrip x icrostrip x icrostrip x icrostrip x x aper x icrostrip x icrostrip x icrostrip Figure Hz Broadband est Circuit Schematic able Hz Broadband est Circuit Component Designations and Values Z7 C3 Z8 C4 C5 Z9 Z10 C9 C8 L2 Z12 Z13 C13 Z14 Z15 Z16 C14 C10 C11 C12 Z x icrostrip Z x icrostrip Z x icrostrip Z x icrostrip Z x icrostrip Z x icrostrip Z x icrostrip Z x icrostrip PCB aconic RF , 30 mil, ε r = 3.55 B2 + C15 + C16 + C17 V DD RF OUPU Z17 Part Description Part Number anufacturer B1 Short Ferrite Bead Fair- Rite B2 Long Ferrite Bead Fair- Rite C1, C7, C13, C14 47 pf Chip Capacitors C100B470J500X C C2, C3, C Gigatrim Variable Capacitors 27291SL Johanson C4, C5, C8, C9 10 pf Chip Capacitors C100B100J500X C C6, C15, C16 10 F, 35 V antalum Chip Capacitor 491D106K035 Kemet C pf Chip Capacitor C100B3R0J500X C C pf Chip Capacitor (RF9060) 0.7 pf Chip Capacitor (RF9060S) DU Z11 C100B0R5B500X C100B0R7B500X C F Electrolytic Chip Capacitor CX63V22713X22 ulticomp L1, L nh Inductors 04-5 Coilcraft C C 4
5 C6 C17 INPU C1 V GG B1 C2 C7 L1 C3 C4 WB1 C5 CU OU RE Figure Hz Broadband est Circuit Component Layout WB2 C8 C9 B2 C13 L2 C10 V DD C15 C16 C11 C12 RF Hz Rev 02 C14 OUPU Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the signature/logo. PCBs may have either otorola or Freescale markings during the transition period. hese changes will have no impact on form, fit or function of the current product. 5
6 YPICL CHRCERISICS Gps, POWER GIN (db) INERODULION DISORION (dbc) ID, I DQ = 650 m 500 m 450 m Gps, POWER GIN (db) P out, OUPU POWER (WS) PEP f, FREQUENCY (Hz) Figure 3. Class B Broadband Circuit Performance P out, OUPU POWER (WS) PEP Figure 4. Power Gain versus Output Power G ps ID IRL 100 V DD = 26 Vdc P out = 60 W (PEP) I DQ = 450 m ID, INERODULION DISORION (dbc) 275 m V DD = 26 Vdc m V DD = 26 Vdc f1 = 945 Hz f1 = 945 Hz 55 f2 = Hz f2 = Hz V DD = 26 Vdc I DQ = 450 m f1 = 945 Hz f2 = Hz 3rd Order 5th Order 7th Order wo one easurement, 100 khz one Spacing Gps, POWER GIN (db) I DQ = 275 m 450 m , DRIN EFFICIENCY (%) ID, INERODULION DISORION (dbc) IRL, INPU REURN LOSS (db) P out, OUPU POWER (WS) PEP Figure 5. Intermodulation Distortion versus Output Power G ps 500 m V DD = 26 Vdc I DQ = 450 m 10 f = 945 Hz P out, OUPU POWER (WS) VG , DRIN EFFICIENCY (%) 6 Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Power Gain and Efficiency versus Output Power
7 YPICL CHRCERISICS Gps, POWER GIN (db) G ps ID P out, OUPU POWER (WS) PEP V DD = 26 Vdc I DQ = 450 m f1 = 945 Hz f2 = Hz Figure 8. Power Gain, Efficiency, and ID versus Output Power , DRIN EFFICIENCY (%) ID, INERODULION DISORION (dbc) 7
8 f Hz Zsource f = 930 Hz f = 960 Hz Z o = 5 Ω Z source Ω Z load f = 960 Hz f = 930 Hz V DD = 26 V, I DQ = 450 m, P out = 60 W PEP j j j0.10 Z load Ω j j j0.37 Z source = est circuit impedance as measured from gate to ground. Z load = est circuit impedance as measured from drain to ground. Input atching Network Z source Device Under est Z load Output atching Network Figure 9. Series Equivalent Source and Load Impedance 8
9 PCKGE DIENSIONS B B (FLNGE) E 2X D bbb G 1 2 N (LID) (INSULOR) 3 B ccc 2X C SEING PLNE Q aaa 2X K bbb B B B H ccc R (LID) CSE 360B-05 ISSUE G NI-360 S (INSULOR) aaa B B F NOES: 1. INERPRE DIENSIONS ND OLERNCES PER SE Y CONROLLING DIENSION: INCH. 3. DIENSION H IS ESURED (0.762) WY FRO PCKGE BODY. INCHES ILLIEERS DI IN X IN X B C D E F G BSC BSC H K N Q R S aaa REF 0.13 REF bbb REF 0.25 REF ccc REF 0.38 REF SYLE 1: PIN 1. DRIN 2. GE 3. SOURCE 9
10 PRODUC DOCUENION Refer to the following documents to aid your design process. pplication Notes N1955: hermal easurement ethodology of RF Power mplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDOS Devices he following table summarizes revisions to this document. REVISION HISORY Revision Date Description 11 Sept Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. Updated Part Numbers in able 5, Component Designations and Values, to RoHS compliant part numbers, p. 4 dded Product Documentation and Revision History, p
11 How to Reach Us: Home Page: Web Support: US/Europe or Locations Not Listed:, Inc. echnical Information Center, EL East Elliot Road empe, rizona or Europe, iddle East, and frica: Freescale Halbleiter Deutschland GmbH echnical Information Center Schatzbogen uenchen, Germany (English) (English) (German) (French) Japan: Japan Ltd. Headquarters RCO ower 15F 1-8-1, Shimo-eguro, eguro-ku, okyo Japan or support.japan@freescale.com sia/pacific: China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing China support.asia@freescale.com For Literature Requests Only: Literature Distribution Center P.O. Box 5405 Denver, Colorado or Fax: LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use products. here are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. reserves the right to make changes without further notice to any products herein. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ypical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including ypicals, must be validated for each customer application by customer s technical experts. does not convey any license under its patent rights nor the rights of others. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur. Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale and the Freescale logo are trademarks of, Inc. ll other product or service names are the property of their respective owners., Inc ll rights reserved. RF Document Device Number: Data RF Freescale Rev. 11, 9/2008 Semiconductor 11
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Technical Data RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 00 MHz. The high gain and
NOT RECOMMENDED FOR NEW DESIGN
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