MB3771 ASSP POWER SUPPLY MONITOR DS E POWER SUPPLY MONITOR FUJITSU SEMICONDUCTOR DATA SHEET

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1 FUJITSU SEMICONDUOR DATA SHEET DS0-00-E ASSP POWER SUPPLY MONITOR MB POWER SUPPLY MONITOR The Fujitsu MB is designed to monitor the voltage level of one or two power supplies (+V and an arbitrary voltage) in a microprocessor circuit, memory board in large-size computer, for example. If the circuit s power supply deviates more than a specified amount, then the MB generates a reset signal to the microprocessor. Thus, the computer data is protected from accidental erasure. Using the MB requires few external components. To monitor only a +V supply, the MB requires the connection of one external capacitor. The level of an arbitrary detection voltage is determined by two external resistors. The MB is available in an -pin Dual In-Line, Single In-Line Package or space saving Flat Package. PLASTIC PACKAGE DIP-P-M0 Precision voltage detection (VSA =.V ±.%) User selectable threshold level with hysterisis (VSB =.V ±.%) Monitors the voltage of one or two power supplies (V and an arbitrary voltage, >.V) Low voltage output for reset signal ( = 0.V typ.) Minimal number of external components (one capacitor min.) Low power dissipation (ICC = 0. ma typ., = V) PLASTIC PACKAGE SIP-P-M0 Usable as over voltage detector Detection threshold voltage has hysteresis function Reference voltage is connectable. Available in a variety of packages -pin Dual In-Line Package -pin Single In-Line Package -pin Flat Package PLASTIC PACKAGE FPT-P-M0 This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.

2 MB PIN ASSIGNMENT VSA VSB/RESIN VSC OUTC TOP VIEW VSA VSB/RESIN FRONT VIEW GND GND OUTC (DIP-P-M0) (FPT-P-M0) VSC (SIP-P-M0) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Supply Voltage -0. to +0 V Input Voltage A VSA -0. to +0. (<+0) V Input Voltage B VSB -0. to +0 V Input Voltage C VSC -0. to +0 V Power Dissipation PD 00 (Ta C) mw Storage Temperature TSTG - to + C NOTE: Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

3 MB BLOCK DIAGRAM.V REFERENCE VOLTAGE.V 00K + + µa 0µA VSA Comparator A VSC 0K _ + _ + VSB / RESIN + _ R Q Comparator C Comparator B S GND OUTC FUNIONAL EXPLANATIONS Detection voltage inputs A and B are connected to the inverting input of Comparators A and B respectively. Both comparators have built-in hysterisis. If either VSA or VSB drops lower than about.v, then goes low. Comparator B is used for the arbitrary preset voltage detection (See Example ), or as forced reset input for TTL logic level input. (See Example ). Comparator C is designed as an open-collector output with inverted polarity input/output characteristics. Comparator C has no hysteresis. It can be used for over-voltage detection (See Example ), generation of signal by positive logic (See Example ), and generation of reference voltage (See Example 0). Note that VSB and VSC should be connected with and GND respectively. (See Example ). The MB can detect about µs voltage sag/surge of the power supply. The user can add delayed trigger capacity by connecting a capacitor between inputs VSA and VSS. (See Example ) Internal pull-up resistor on the line provides for high impedance loading (i.e. CMOS logic).

4 MB RECOMMENDED OPERATING CONDITIONS Parameter Symbol Rating Unit Supply Voltage +. to + V Output Current () I 0 to 0 ma Output Current (OUTC) IOUTC 0 to ma Operating Ambient Temperature Ta -0 to + C ELERICAL CHARAERISTICS DC CHARAERISTICS ( = V, Ta = C) Parameter Condition Symbol Value Min Typ Max Unit Supply Current VSB = V, VSC = 0V ICC µa VSB = 0V, VSC = 0V ICC µa Sugging Detection Voltage Falling VSAL V Ta = -0 to + C.0.0. V Rising VSAH V Ta = -0 to + C..0. V Hysterisis Width VHYSA mv Sagging Detection Voltage VSB VSB..0. V Ta = -0 to + C V Deviation of Detection Voltage =. to V VSB - 0 mv Hysterisis Width VHYSB mv Input Current VSB = V IIHB na VSB = 0V IILB na High-Level Output Voltage I = -µa, VSB = V VOHR..9 - V Output Saturation Voltage I = ma, VSB = 0V V VOLR I = 0mA, VSB = 0V V Output Sink Current VOLR =.0V, VSB = 0V I ma Charge Current VSB = V, V = 0.V I 9 µa

5 MB ELERICAL CHARAERISTICS (Continued) DC CHARAERISTICS ( = V, Ta = C) Parameter Condition Symbol Value Min Typ Max Unit Input Current Detection Voltage VSC = V IIHC na VSC = 0V IILC na... V VSC Ta = -0 to + C.0.. V Deviation of Detection Voltage =. to V VSC - 0 mv Output Leakage Current VOHC = V IOHC - 0 µa Output Saturation Voltage IOUTC = ma, VSC = V VOLC V Output Sink Current VOLC =.0V, VSC = V IOUTC - ma Reset Operation Minimum Supply Voltage VOLR = 0.V, I = 00µA L V AC CHARAERISTICS ( = V, Ta = C = 0.0µF) Parameter Condition Symbol Value Min Typ Max Unit Input Pulse Width tpi µs Output Pulse Width tpo ms Rising Time RL =.KΩ, CL = 00pF tr -.0. µs Falling Time RL =.KΩ, CL = 00pF tf µs tpd - 0 µs Propagation Delay Time RL =.KΩ, CL = 00p tphl µs RL =.KΩ, CL = 00pF tplh µs Note: In case of VSB termination. In case of VSC termination

6 MB FUNION EXPLANATION VHYS VS 0.V 0 t TPO TPO 0 t Point : When rises to about 0.V, goes low. Point : When reaches VS +VHYS, then begins charging. remains low during this time. Point : goes high when begins charging. TPO [ms] 00 [µf] Point : When level dropps lower then VS, then goes low and starts discharging. Point : When level reaches VS + VHYS, then starts charging In the case of voltage sagging, if the period from the time goes lower than or equal to VS to the time reaches VS +VHYS again, is longer than tp, (as specified in the AC Characteristics), is discharged and charged successively. Point : After TPO passes, and level exceeds VS + VHYS, then goes high. Point : Same as Point. Point : remains low until drops below 0.V.

7 MB APPLICATION CIRCUIT EXAMPLE : V Power Supply Monitor MB Logic Circuit NOTE: Monitored by VSA. Detection Threshold Voltage is VSAL and VSAH. EXAMPLE : V Power Supply Monitor with external adjust MB R R Logic Circuit R [KΩ] R [KΩ] Detection Voltage VSAL [V] VSAH [V] NOTE: Detection voltages can be adjusted as shown below EXAMPLE : Arbitrary Voltage Supply Monitor Example a: Case: < V Detection Voltage can be set by R and R. Detection Voltage = (R + R) VSB/R Connect Pin to when less than.v. Pin can be opened when greater than.v. Power Dissipation can be reduced. MB R R NOTE: Hysteresis of mv at VSB at termination is available. Hysteresis width dose not depend on (RI + R).

8 MB EXAMPLE : Arbitrary Voltage Supply Monitor Example b: Case: V R 00kΩ R Stablized V R kω R 0.µ R output levels range from 0V to V approximately. Device damage may occur if exceeds its high level (V). Output voltage and maximum voltage levels and determined by resistor R and R. In this case, the V stabilized output can be used to power TTL circuitry. Using the chart below, the value of R can be determined with respect to the output current. [V] Detection [V] Min. * for adequat [V] R [MΩ] R [KΩ] R [KΩ] NOTE: Resistor values are determined when IOUTC = 00µA, VOLC = 0.V. All resistor are /W. Output Current [ma] < < <. EXAMPLE : V and V Power Supply Monitor ( = V, = V) MB 90KΩ KΩ R R Logic Circuit NOTE: V is monitored by VSA. Detection voltage is about.v. V is monitored by VSB. When R = 90KΩ and R = KΩ, Detection voltage is about 9.0V.Generally the detection voltage is determined by the following equation. Detection Voltage = (R + R) VSB/R

9 MB EXAMPLE : V and V Power Supply Monitor ( signale is generated by V, = V, = V) R R 90KΩ R KΩ 0KΩ 00KΩ RL 0KΩ IRQ ro Port Logic Circuit R R 0KΩ MB NOTE: V is monitored by VSA, and generates signal when VSA detects voltage sagging.v is monitored by VSC, and generates its detection signal at OUTC. The detection voltage of V monitoring and its hysterisis is determined by the following equations. Detection voltage = R + R + R R + R VSC (.9 volts in the circuit above) R (R - R // R) Hysterisis width = VSC (00mV in the circuit above) (R + R) (R + R // R) EXAMPLE : V Power Supply Monitor with forced input RESIN MB Logic Circuit NOTE: RESIN is an TTL compatible input. 9

10 MB EXAMPLE : V Power Supply Monitor with Non-inverted RL 0KΩ MB NOTE: In this case, Comparator C is used to invert signal. OUTC is an open-collector output. RL is used an a pull-up resistor. EXAMPLE : V Power Supply Monitor with delayed trigger tpi MB V C Logic Circuit V tpi min. = 0µs when C = 000pF. EXAMPLE 9: V and Arbitrary Negative Voltage Monitor R.KΩ MB VEE R R 0KΩ R 0KΩ 0.µF SBD R 0KΩ NOTE: +V and negative voltage are monitored at and VEE respectively. R, R, and R should be the same value. The negative detection voltages is determined by as the following equation. Detection Voltage VS = VSB -VSB R/R Example: When VEE = -V and R = 9KΩ, VS = -.V. 0

11 MB EXAMPLE 0: Reference Voltage Generation and Voltage Sagging Detection Example 0a: 9V Reference Voltage Generation and V/9V Monitoring V : V MB R KΩ 0.µF R R.KΩ 9V (upto 0mA) 00KΩ R R.KΩ KΩ NOTE: Detection Voltage: VS =.V,.V In the above examples, the output voltage and the detection voltage are determined by the following equations: Output Voltage: VO = (R + R) VSC/R Detection Voltage: VS = (R + R) VSB/R Example 0b: V Reference Voltage Generation and V Monitoring V MB R KΩ 0.µF R.KΩ V (upto 0mA) R.KΩ NOTE: Detection Voltage: VS =.V In the above examples, the output voltage is determined by the following equations: Output Voltage: VO = (R + R) VSC/R

12 MB Example 0c: V Reference Voltage Generation and V Monitoring MB R 00KΩ R V KΩ R C 0.µF Using the reference table below, the value of R can be determined. Where R is 00KΩ, R is KΩ, C is 0.µF Reference Table of R, and the output current. [V] R [KΩ] Output Current [ma] 0 <.. <.. < 0. Example 0d:.V Reference Voltage Generation and V Monitoring (V) 0KΩ R MB 0.µF GND Reference Voltage.V typ. NOTE: Resistor R determines Reference current. Using.KΩ as R, reference current is about ma.

13 MB EXAMPLE : Low Voltage and Over Voltage Detection R MB R R R VSL VSH NOTE: VSH has no hysteresis. When over voltage is detected, is held in the constant time as well as when low voltage is detected. VSL = (R + R) VSB/R VSH = (R + R) VSC/R EXAMPLE : Detection of Abnormal State of Power Supply System This Example circuit detects abnormal low/over voltage of power supply voltage and is indicated by LED indicator. LED is reset by the CLEAR key. LED R MB R CLEAR R R Where R = 0Ω, R = KΩ to 00KΩ NOTE: The detection levels of low/over voltages are determined by VSA, and R and R respectively.

14 MB EXAMPLE : Back-up Power Supply System ( = V) D* VF 0.V R > KΩ R 0KΩ R MB R.KΩ 00KΩ R 00KΩ O CS R KΩ * : Diode has been added to prevent Comp.C from malfunctionig when voltage is low. Set V and V with care given to VF temperature characteristics (typically negative temperature characteristics). V V NOTE: Use CMOS Logic and connect VDD of CMOS logic with O. The back-up battery works after CS goes high as V < V. During tpo, memory access is prohibited. CS s threshold voltage Vis determined by the following equation: V = (R + R + R ) VSB/R The voltage to change V is provided as the following equation: V = (R+ R + R) VSC/(R + R) CS t tpo O t t

15 MB Fig. - Supply Current ICC vs. Supply Voltage 00 Fig. - Supply Current ICC vs. Supply Voltage C Supply Current Icc [µa] C C C C C -0 C Supply Current Icc [µa] 00-0 C 00 C 00 C 00 C -0 C Supply Voltage [V] Supply Voltage [V]. Fig. - Detection Voltage VSA vs. Ambient Temperature.0 Fig. - Detection Voltage VSB vs. Abient Temperature Detection Voltage V SAH, V SAL [V].... VSAH VSAL Detection Voltage V SBH, V SBL [V]. VSBH VSBL Ambient Temperature Ta [ C] Ambient Temperature Ta [ C] Detection Voltage V SC [V].0. Fig. - Detection Voltage VSC vs. Ambient Temperature Ambient Temperature Ta [ C] Detection Voltage VSC, VSBL, VSBH [V] Fig. - Detection Voltage VSB, VSC vs. Supply Voltage VSBH VSC VSBL Supply Voltage [V]

16 MB Fig. - Output Voltage vs. Supply Voltage Fig. - High-level Voltage vs. Output Current Reset Output Voltage VOLR [V] C C -0 C 0 Supply Voltage [V] Reset High-level Voltage VOHR [V] C C Output Current IOH [µa] C Fig. 9 - Low-level Voltage vs. Output Current Fig. 0 - OUTC Output Voltage vs. OUTC Output Current Reset Low-level Voltage VOLR [V] C C C Outc Output Voltage VOLC [V] C C C Output Current I [ma] OUTC Output Current IOUTC [ma] Fig. - Capacitance vs. Reset Hold Time 0. Fig. - Reset Hold Time vs. Supply Voltage ( = 0.0µF) Reset Hold Time [sec] 00m 0m m 00µ -0 C C C Reset Hold TPO [ms] C C C 0µ µ p 0p 00p 000p Capacitance [F] 0.0µ 0.µ µ 0µ 00µ Supply Voltage [V]

17 MB PACKAGE DIMENSIONS pin, Plastic DIP (DIP-P-M0) PIN INDEX.0±0. (.±.00).(.)MAX.00(.)MIN 0.(.00)MIN 0.±0.0 (.0±.00) 0.±0.0 (.00±.00) (.00) TYP.(.00) TYP MAX C 99 FUJITSU LIMITED D000S-C- Dimensions in mm (inches).

18 MB PACKAGE DIMENSIONS (Continued) pin, Plastic SIP (SIP-P-M0) ±0. (.±.00) INDEX- INDEX-.0±0. (.±.00).0±0.0 (.±.0) ±0.0 (.±.0).(.00) TYP ±0.0 (.00±.00) 0.±0.0 (.00±.00) C 99 FUJITSU LIMITED S000S-C- Dimensions in mm (inches).

19 MB PACKAGE DIMENSIONS (Continued) pin, Plastic SOP (FPT-P-M0) (.09)MAX 0.0(.00)MIN (STAND OFF) INDEX.0±0.0.0±0.0 (.09±.0) (.0±.0) (.00) TYP.(.0)REF 0.±0.0 (.0±.00) Ø0.(.00) M Details of "A" part 0.0±0.0 (.00±.00) 0.0(.00) "A" 0.0(.00) 0.(.00)MAX 0.(.0)MAX 0.0(.00) C 99 FUJITSU LIMITED F000S-C- Dimensions in mm(inches). 9

20 FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT, --, Kamikodanaka Nakahara-ku, Kawasaki-shi Kanagawa -, Japan Tel: (0) - Fax: (0) -9 North and South America FUJITSU MICROELERONICS, INC. Semiconductor Division North First Street San Jose, CA 9-0, U.S.A. Tel: (0) Fax: (0) -90/90 Europe FUJITSU MIKROELEKTRONIK GmbH Am Siebenstein -0 0 Dreieich-Buchschlag Germany Tel: (00) 90-0 Fax: (00) 90- Asia Pacific FUJITSU MICROELERONICS ASIA PTE. LIMITED #0-0, Lorong Chuan New Tech Park Singapore Tel: () -00 Fax: () -00 All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams. FUJITSU semiconductor devices are intended for use in standard applications (computers, office automation and other office equipment, industrial, communications, and measurement equipment, personal or household devices, etc.). CAUTION: Customers considering the use of our products in special applications where failure or abnormal operation may directly affect human lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems, atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with FUJITSU sales representatives before such use. The company will not be responsible for damages arising from such use without prior approval. Any semiconductor devices have inherently a certain rate of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Control Law of Japan, the prior authorization by Japanese government should be required for export of those products from Japan. F90 FUJITSU LIMITED Printed in Japan